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Results: 3
EFFECT OF LOW AND HIGH-TEMPERATURE ANNEALING ON THE ELECTRICAL-PROPERTIES OF PURE N2O SIH4 PECVD SIO2 DEPOSITED AT A HIGH-RATE/
Authors: CHANANA RK UPADHYAY HN DWIVEDI R SRIVASTAVA SK
Citation: Rk. Chanana et al., EFFECT OF LOW AND HIGH-TEMPERATURE ANNEALING ON THE ELECTRICAL-PROPERTIES OF PURE N2O SIH4 PECVD SIO2 DEPOSITED AT A HIGH-RATE/, International journal of electronics, 80(4), 1996, pp. 525-532
ELECTRICAL-PROPERTIES OF 6.3-NM RF OXYGEN PLASMA OXIDE GROWN NEAR ROOM-TEMPERATURE WITH IN-SITU DRY-CLEANING OF SI SURFACE
Authors: CHANANA RK UPADHYAY HN DWIVEDI R SRIVASTAVA SK
Citation: Rk. Chanana et al., ELECTRICAL-PROPERTIES OF 6.3-NM RF OXYGEN PLASMA OXIDE GROWN NEAR ROOM-TEMPERATURE WITH IN-SITU DRY-CLEANING OF SI SURFACE, Solid-state electronics, 38(5), 1995, pp. 1075-1080
FOWLER-NORDHEIM EMISSION AND ELECTRON TRAPPING IN PURE N2O SIH(4) PECVD OXIDE DEPOSITED ON N-2, H-2 AND O-2 PLASMA PRECLEANED SI WAFERS/
Authors: UPADHYAY HN CHANANA RK DWIVEDI R SRIVASTAVA SK
Citation: Hn. Upadhyay et al., FOWLER-NORDHEIM EMISSION AND ELECTRON TRAPPING IN PURE N2O SIH(4) PECVD OXIDE DEPOSITED ON N-2, H-2 AND O-2 PLASMA PRECLEANED SI WAFERS/, Solid-state electronics, 37(9), 1994, pp. 1671-1672
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