Citation: H. Sunamura et al., NEW STRAIN-RELIEVING MICROSTRUCTURE IN PURE-GE SI SHORT-PERIOD SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1595-1598
Citation: N. Usami et al., PHOTOLUMINESCENCE FROM PURE-GE PURE-SI NEIGHBORING CONFINEMENT STRUCTURE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1710-1712
Citation: Zg. Ji et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING OF PURE GERMANIUM SILICON SHORT-PERIOD SUPERLATTICE/, Acta physica Sinica, 7(8), 1998, pp. 608-612
Authors:
LI JH
YAMAGUCHI Y
HASHIZUME H
USAMI N
SHIRAKI Y
Citation: Jh. Li et al., WAVY INTERFACE MORPHOLOGIES IN STRAINED SI1-XGEX SI MULTILAYERS ON VICINAL SI(111) SUBSTRATES/, Journal of physics. Condensed matter (Print), 10(39), 1998, pp. 8643-8652
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UCHIDA K
MIURA N
SUGITA T
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USAMI N
SHIRAKI Y
Citation: K. Uchida et al., MAGNETOPHOTOLUMINESCENCE SPECTRA OF GAP ALP SHORT-PERIOD SUPERLATTICES IN HIGH MAGNETIC-FIELDS AND UNIAXIAL PRESSURES/, Physica. B, Condensed matter, 251, 1998, pp. 909-913
Authors:
USAMI N
SHIRAKI Y
PAN W
YAGUCHI H
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Citation: N. Usami et al., EXCITON DIFFUSION DYNAMICS IN QUANTUM NANOSTRUCTURES ON V-GROOVE PATTERNED SUBSTRATES, Superlattices and microstructures, 23(2), 1998, pp. 395-400
Citation: T. Ohta et al., EFFECT OF TENSILE STRAIN ON OPTICAL-PROPERTIES OF ALGAP-BASED NEIGHBORING CONFINEMENT STRUCTURE, Superlattices and microstructures, 23(1), 1998, pp. 97-102
Authors:
BERA LK
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MUKHOPADHYAY M
NAYAK DK
USAMI N
SHIRAKI Y
MAITI CK
Citation: Lk. Bera et al., ELECTRICAL-PROPERTIES OF N2O NH3 PLASMA GROWN OXYNITRIDE ON STRAINED-SI/, IEEE electron device letters, 19(8), 1998, pp. 273-275
Authors:
AMANO K
KOBAYASHI M
OHGA A
HATTORI T
USAMI N
SHIRAKI Y
Citation: K. Amano et al., EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE OF SI PURE-GE/SI QUANTUM STRUCTURES ON SI(311) SUBSTRATES/, Semiconductor science and technology (Print), 13(11), 1998, pp. 1277-1283
Citation: T. Sugita et al., ENHANCED NO-PHONON TRANSITION IN INDIRECT GAASP GAP QUANTUM-WELLS BY INSERTION OF MONOLAYER ALP FOR ELECTRON LOCALIZATION/, Journal of crystal growth, 188(1-4), 1998, pp. 323-327
Authors:
USAMI N
WATANABE K
YAMAMOTO I
YOSHIMURA H
Citation: N. Usami et al., MECHANISM OF INHIBITORY EFFECTS OF CANNABIDIOL AND CANNABIDIOL HYDROXY-QUINONE ON THE HEPATIC-MICROSOMAL DRUG-METABOLIZING-ENZYMES IN MICE, Eisei Kagaku, 44(1), 1998, pp. 33-33
Authors:
USAMI N
KOBANA K
YOSHIDA H
KIMURA T
WATANABE K
YOSHIMURA H
YAMAMOTO I
Citation: N. Usami et al., SYNTHESIS AND PHARMACOLOGICAL ACTIVITIES IN MICE OF HALOGENATED DELTA(9)-TETRAHYDROCANNABINOL DERIVATIVES, Chemical and Pharmaceutical Bulletin, 46(9), 1998, pp. 1462-1467
Citation: Es. Kim et al., CONTROL OF GE DOTS IN DIMENSION AND POSITION BY SELECTIVE EPITAXIAL-GROWTH AND THEIR OPTICAL-PROPERTIES, Applied physics letters, 72(13), 1998, pp. 1617-1619
Citation: S. Inokuchi et N. Usami, CLOSED COMPLETE RUPTURE OF THE FLEXOR HALLUCIS LONGUS TENDON AT THE GROOVE OF THE TALUS, Foot & ankle international, 18(1), 1997, pp. 47-49
Authors:
REIMER PM
LI JH
YAMAGUCHI Y
SAKATA O
HASHIZUME H
USAMI N
SHIRAKI Y
Citation: Pm. Reimer et al., INTERFACIAL ROUGHNESS OF SI1-XGEX SI MULTILAYER STRUCTURES ON SI(111)PROBED BY X-RAY-SCATTERING/, Journal of physics. Condensed matter, 9(22), 1997, pp. 4521-4533
Citation: T. Ohta et al., EFFECTS OF TENSILE STRAIN ON THE OPTICAL-PROPERTIES OF AN ALGAP-BASEDNEIGHBORING CONFINEMENT STRUCTURE, Semiconductor science and technology, 12(7), 1997, pp. 881-887
Citation: N. Usami et al., SPECTROSCOPIC STUDY OF SI-BASED QUANTUM-WELLS WITH NEIGHBORING CONFINEMENT STRUCTURE, Semiconductor science and technology, 12(12), 1997, pp. 1596-1602
Citation: H. Sunamura et al., ANOMALOUS PHOTOLUMINESCENCE OF PURE-GE SI TYPE-II COUPLED QUANTUM-WELLS (II-CQWS)/, Thin solid films, 294(1-2), 1997, pp. 336-339
Authors:
KIM ES
USAMI N
SUNAMURA H
FUKATSU S
SHIRAKI Y
Citation: Es. Kim et al., LUMINESCENCE STUDY ON GE ISLANDS AS STRESSORS ON SI1-XGEX SI QUANTUM-WELL/, Journal of crystal growth, 175, 1997, pp. 519-523
Citation: Dk. Nayak et al., PHOTOLUMINESCENCE STUDY OF THE OPTICAL-PROPERTIES OF SIGE QUANTUM-WELLS ON SEPARATION BY IMPLANTED OXYGEN SUBSTRATES, Journal of applied physics, 81(8), 1997, pp. 3484-3489
Authors:
ARAI J
OHGA A
HATTORI T
USAMI N
SHIRAKI Y
Citation: J. Arai et al., OPTICAL INVESTIGATION OF GROWTH MODE OF GE THIN-FILMS ON SI(110) SUBSTRATES, Applied physics letters, 71(6), 1997, pp. 785-787
Citation: Es. Kim et al., ANOMALOUS LUMINESCENCE PEAK SHIFT OF SIGE SI QUANTUM-WELL INDUCED BY SELF-ASSEMBLED GE ISLANDS/, Applied physics letters, 70(3), 1997, pp. 295-297
Authors:
ARAI J
USAMI N
OTA K
SHIRAKI Y
OHGA A
HATTORI T
Citation: J. Arai et al., PRECISE CONTROL OF ISLAND FORMATION USING OVERGROWTH TECHNIQUE ON CLEAVED EDGES OF STRAINED MULTIPLE-QUANTUM WELLS, Applied physics letters, 70(22), 1997, pp. 2981-2983