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Citation: Va. Bykovskii et al., RADIATIVE RECOMBINATION AND IMPURITY-DEFECT INTERACTIONS IN NUCLEAR-DOPED GALLIUM-ARSENIDE PRODUCED UNDER DIFFERENT IRRADIATION AND CRYSTAL-GROWTH CONDITIONS, Semiconductors, 30(7), 1996, pp. 685-689

Authors: AKULOVICH NI BYKOVSKII VA KARPOVICH LM UTENKO VI SHOKH VF PETRENKO VV

Citation: Ni. Akulovich et al., INTRODUCTION OF ACCEPTOR IMPURITIES BY PHOTONUCLEAR DOPING OF GALLIUM-ARSENIDE, Semiconductors, 30(2), 1996, pp. 158-161

Authors: BYKOVSKY VA KHITKO VI SHOH VF UTENKO VI

Citation: Va. Bykovsky et al., PHOTOLUMINESCENCE STUDY OF SHALLOW IMPURITIES LOCALIZATION IN TRANSMUTATION DOPED GAAS, Solid state communications, 93(5), 1995, pp. 459-459

Authors: JUODKAZIS S VANAGAS E NETIKSIS V PETRAUSKAS M BYKOVSKY VA UTENKO VI HITKO VI

Citation: S. Juodkazis et al., MAPPING OF GAAS WAFERS BY IR LIGHT-DIFFRACTION AND LUMINESCENCE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 448-451