Authors:
Umezu, I
Yamazaki, G
Yamaguchi, T
Sugimura, A
Makino, T
Yamada, Y
Suzuki, N
Yoshida, T
Citation: I. Umezu et al., Effects of annealing on luminescence properties of Si nanocrystallites prepared by pulsed laser ablation in inert gas, MAT SCI E C, 15(1-2), 2001, pp. 129-131
Authors:
Inada, M
Fujishima, T
Umezu, I
Sugimura, A
Yamada, S
Citation: M. Inada et al., Conduction-type control of Ge films grown on (NH4)(2)S-treated GaAs by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 791-795
Authors:
Umezu, I
Murota, T
Kawata, M
Takashima, Y
Yoshida, K
Inada, M
Sugimura, A
Citation: I. Umezu et al., Correlation between photoluminescence intensity and micro structure in amorphous silicon films prepared by reactive RF sputtering, JPN J A P 2, 39(8B), 2000, pp. L844-L846
Authors:
Oyoshi, K
Sumi, N
Umezu, I
Souda, R
Yamazaki, A
Haneda, H
Mitsuhashi, T
Citation: K. Oyoshi et al., Structure, optical absorption and electronic states of Zn+ ion implanted and subsequently annealed sol-gel anatase TiO2 films, NUCL INST B, 168(2), 2000, pp. 221-228
Authors:
Sugimura, A
Ohnishi, K
Umezu, I
Vaccaro, PO
Citation: A. Sugimura et al., Optical properties of self-assembled InAs quantum dots grown on GaAs(211)Asubstrate, THIN SOL FI, 380(1-2), 2000, pp. 97-100
Authors:
Umezu, I
Yoshida, K
Sugimura, A
Inokuma, T
Hasegawa, S
Wakayama, Y
Yamada, Y
Yoshida, T
Citation: I. Umezu et al., A comparative study of the photoluminescence properties of a-SiOx : H filmand silicon nanocrystallites, J NON-CRYST, 266, 2000, pp. 1029-1032