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Results: 1-19 |
Results: 19
Recent progress and current issues in SiC semiconductor devices for power applications
Authors: Johnson, CM Wright, NG Uren, MJ Hilton, KP Rahimo, M Hinchley, DA Knights, AP Morrison, DJ Horsfall, AB Ortolland, S O'Neill, AG
Citation: Cm. Johnson et al., Recent progress and current issues in SiC semiconductor devices for power applications, IEE P-CIRC, 148(2), 2001, pp. 101-108
Observations of deep levels in 4H-SiC using optoelectronic modulation spectroscopy
Authors: Chiu, CH Parmiter, PJM Hilton, K Uren, MJ Swanson, JG
Citation: Ch. Chiu et al., Observations of deep levels in 4H-SiC using optoelectronic modulation spectroscopy, J ELEC MAT, 30(10), 2001, pp. 1361-1368
Dependence of energy distributions of interface states on stress conditions
Authors: Zhang, WD Zhang, JF Uren, MJ Groeseneken, G Degraeve, R Lalor, M Burton, D
Citation: Wd. Zhang et al., Dependence of energy distributions of interface states on stress conditions, MICROEL ENG, 59(1-4), 2001, pp. 95-99
Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs
Authors: Uren, MJ Lee, D Hughes, BT Parmiter, PJM Birbeck, JC Balmer, R Martin, T Wallis, RH Jones, SK
Citation: Mj. Uren et al., Electrical characterisation of AlGaN/GaN heterostructure wafers for high-power HFETs, J CRYST GR, 230(3-4), 2001, pp. 579-583
A physically based relation between extracted threshold voltage and surface potential flat-band voltage for MOSFET compact modeling
Authors: Benson, J D'Halleweyn, NV Redman-White, W Easson, CA Uren, MJ Faynot, O Pelloie, JL
Citation: J. Benson et al., A physically based relation between extracted threshold voltage and surface potential flat-band voltage for MOSFET compact modeling, IEEE DEVICE, 48(5), 2001, pp. 1019-1021
A physically based compact model of partially depleted SOI MOSFETs for analog circuit simulation
Authors: Lee, MSL Tenbroek, BN Redman-White, W Benson, J Uren, MJ
Citation: Msl. Lee et al., A physically based compact model of partially depleted SOI MOSFETs for analog circuit simulation, IEEE J SOLI, 36(1), 2001, pp. 110-121
On the interface states generated under different stress conditions
Authors: Zhang, WD Zhang, JF Uren, MJ Groeseneken, G Degraeve, R Lalor, M Burton, D
Citation: Wd. Zhang et al., On the interface states generated under different stress conditions, APPL PHYS L, 79(19), 2001, pp. 3092-3094
Surface preparation for Schottky metal-4H-SiC contacts formed on plasma-etched SiC
Authors: Morrison, DJ Pidduck, AJ Moore, V Wilding, PJ Hilton, KP Uren, MJ Johnson, CM Wright, NG O'Neill, AG
Citation: Dj. Morrison et al., Surface preparation for Schottky metal-4H-SiC contacts formed on plasma-etched SiC, SEMIC SCI T, 15(12), 2000, pp. 1107-1114
Infra-red reflectivity of ion-implanted and pulsed excimer laser irradiated 4H-SiC
Authors: Key, PH Sands, D Schlaf, M Walton, CD Anthony, CJ Brunson, KM Uren, MJ
Citation: Ph. Key et al., Infra-red reflectivity of ion-implanted and pulsed excimer laser irradiated 4H-SiC, THIN SOL FI, 364(1-2), 2000, pp. 200-203
Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation
Authors: Morrison, DJ Wright, NG Horsfall, AB Johnson, CM O'Neill, AG Knights, AP Hilton, KP Uren, MJ
Citation: Dj. Morrison et al., Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation, SOL ST ELEC, 44(11), 2000, pp. 1879-1885
Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation
Authors: Knights, AP Lourenco, MA Homewood, KP Morrison, DJ Wright, NG Ortolland, S Johnson, CM O'Neill, AG Coleman, PG Hilton, KP Uren, MJ
Citation: Ap. Knights et al., Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation, J APPL PHYS, 87(8), 2000, pp. 3973-3977
Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes
Authors: Morrison, DJ Hilton, KP Uren, MJ Wright, NG Johnson, CM O'Neill, AG
Citation: Dj. Morrison et al., Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes, MAT SCI E B, 61-2, 1999, pp. 345-348
Quality and reliability of wet and dry oxides on n-type 4H-SiC
Authors: Anthony, CJ Jones, AJ Uren, MJ
Citation: Cj. Anthony et al., Quality and reliability of wet and dry oxides on n-type 4H-SiC, MAT SCI E B, 61-2, 1999, pp. 460-463
Positron annihilation spectroscopy of laser-irradiated 4H-SiC
Authors: Coleman, PG Malik, F Uren, MJ Brunson, KM Sands, D Walton, CD
Citation: Pg. Coleman et al., Positron annihilation spectroscopy of laser-irradiated 4H-SiC, APPL SURF S, 149(1-4), 1999, pp. 144-147
Validation of the voltage step technique for determination of slow state density in MOS gate oxides
Authors: Spillane, MP Taylor, S Uren, MJ
Citation: Mp. Spillane et al., Validation of the voltage step technique for determination of slow state density in MOS gate oxides, MICROEL ENG, 48(1-4), 1999, pp. 155-158
Effect of post oxidation processing on dry oxides on N-type 4H-SiC
Authors: Anthony, CJ Uren, MJ
Citation: Cj. Anthony et Mj. Uren, Effect of post oxidation processing on dry oxides on N-type 4H-SiC, MICROEL ENG, 48(1-4), 1999, pp. 249-252
Modulation speed of an efficient porous silicon light emitting device
Authors: Cox, TI Simons, AJ Loni, A Calcott, PDJ Canham, LT Uren, MJ Nash, KJ
Citation: Ti. Cox et al., Modulation speed of an efficient porous silicon light emitting device, J APPL PHYS, 86(5), 1999, pp. 2764-2773
Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI devices
Authors: Tenbroek, BM Bunyan, RJT Whiting, G Redman-White, W Uren, MJ Brunson, KM Lee, MSL Edwards, CF
Citation: Bm. Tenbroek et al., Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI devices, IEEE DEVICE, 46(1), 1999, pp. 251-253
A multibit Sigma Delta modulator in floating-body SOS SOI CMOS for extremeradiation environments
Authors: Edwards, CF Redman-White, W Bracey, M Tenbroek, BM Lee, MSL Uren, MJ
Citation: Cf. Edwards et al., A multibit Sigma Delta modulator in floating-body SOS SOI CMOS for extremeradiation environments, IEEE J SOLI, 34(7), 1999, pp. 937-948
Risultati: 1-19 |