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Results: 1-10 |
Results: 10
Experimental studies of 90 degrees Bragg reflection from a sub-micron InxGa1-xAs single-crystal film deposited on a GaAs substrate
Authors: Nikulin, AY Tamasaku, K Usher, BF Ishikawa, T
Citation: Ay. Nikulin et al., Experimental studies of 90 degrees Bragg reflection from a sub-micron InxGa1-xAs single-crystal film deposited on a GaAs substrate, JPN J A P 1, 40(2A), 2001, pp. 898-903
Quantitative study of thermal diffusion of elements across a ZnSe/GaAs interface using SIMS
Authors: Gard, FS Riley, JD Leckey, R Usher, BF Prince, K Burke, P
Citation: Fs. Gard et al., Quantitative study of thermal diffusion of elements across a ZnSe/GaAs interface using SIMS, SURF REV L, 8(1-2), 2001, pp. 33-42
Reflection high-energy electron diffraction (RHEED) study of MBE growth ofZnSe on GaAs(111)B surfaces
Authors: Gard, FS Riley, JD Leckey, R Usher, BF
Citation: Fs. Gard et al., Reflection high-energy electron diffraction (RHEED) study of MBE growth ofZnSe on GaAs(111)B surfaces, APPL SURF S, 181(1-2), 2001, pp. 94-102
Deviation of the AlGaAs lattice constant from Vegard's law
Authors: Zhou, D Usher, BF
Citation: D. Zhou et Bf. Usher, Deviation of the AlGaAs lattice constant from Vegard's law, J PHYS D, 34(10), 2001, pp. 1461-1465
Selective photon-stimulated desorption of hydrogen from GaAs surfaces
Authors: Petravic, M Deenapanray, PNK Comtet, G Hellner, L Dujardin, G Usher, BF
Citation: M. Petravic et al., Selective photon-stimulated desorption of hydrogen from GaAs surfaces, PHYS REV L, 84(10), 2000, pp. 2255-2258
Experimental observation of X-ray diffraction from a thin crystalline filmat a 90 degrees Bragg reflection
Authors: Nikulin, AY Davis, JR Jones, NT Usher, BF Souvorov, AY Freund, A
Citation: Ay. Nikulin et al., Experimental observation of X-ray diffraction from a thin crystalline filmat a 90 degrees Bragg reflection, PHYS ST S-A, 179(1), 2000, pp. 103-108
On a possibility of high-resolution characterization of InGaAs/GaAs multilayers using phase-retrieval x-ray diffractometry technique
Authors: Nikulin, AY Siu, K Davis, JR Usher, BF
Citation: Ay. Nikulin et al., On a possibility of high-resolution characterization of InGaAs/GaAs multilayers using phase-retrieval x-ray diffractometry technique, J PHYS D, 33(20), 2000, pp. 2521-2526
Edge-type misfit dislocations produced by thermal processing of pre-relaxed InxGa1-xAs/GaAs heterostructures
Authors: Liu, XW Hopgood, AA Usher, BF Wang, H Braithwaite, NS
Citation: Xw. Liu et al., Edge-type misfit dislocations produced by thermal processing of pre-relaxed InxGa1-xAs/GaAs heterostructures, J APPL PHYS, 88(10), 2000, pp. 5975-5980
Formation of misfit dislocations during growth of InxGa1-xAs/GaAs strained-layer heterostructures
Authors: Liu, XW Hopgood, AA Usher, BF Wang, H Braithwaite, NSJ
Citation: Xw. Liu et al., Formation of misfit dislocations during growth of InxGa1-xAs/GaAs strained-layer heterostructures, SEMIC SCI T, 14(12), 1999, pp. 1154-1160
Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
Authors: Russell-Harriott, JJ Zou, J Moon, AR Cockayne, DJH Usher, BF
Citation: Jj. Russell-harriott et al., Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy, APPL PHYS L, 73(26), 1998, pp. 3899-3901
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