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Results:
1-7
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Results: 7
Authors:
SCHAPERS T
MALINDRETOS J
NEUROHR K
LACHENMANN S
VANDERHART A
CRECELIUS G
HARDTDEGEN H
LUTH H
GOLUBOV AA
Citation: T. Schapers et al., DEMONSTRATION OF A CURRENT-CONTROLLED 3-TERMINAL NB-INXGA1-XAS INP JOSEPHSON CONTACT/, Applied physics letters, 73(16), 1998, pp. 2348-2350
Authors:
SCHIMPF K
SOMMER M
HORSTMANN M
HOLLFELDER M
VANDERHART A
MARSO M
KORDOS P
LUTH H
Citation: K. Schimpf et al., 0.1-MU-M T-GATE AL-FREE INP INGAAS/INP PHEMTS FOR W-BAND APPLICATIONSUSING A NITROGEN CARRIER FOR LP-MOCVD GROWTH/, IEEE electron device letters, 18(4), 1997, pp. 144-146
Authors:
SCHAPERS T
KALUZA A
NEUROHR K
MALINDRETOS J
CRECELIUS G
VANDERHART A
HARDTDEGEN H
LUTH H
Citation: T. Schapers et al., JOSEPHSON EFFECT IN NB TWO-DIMENSIONAL ELECTRON-GAS STRUCTURES USING A PSEUDOMORPHIC INXGA1-XAS/INP HETEROSTRUCTURE/, Applied physics letters, 71(24), 1997, pp. 3575-3577
Authors:
APPENZELLER J
SCHROER C
SCHAPERS T
VANDERHART A
FORSTER A
LENGELER B
LUTH H
Citation: J. Appenzeller et al., ELECTRON INTERFERENCE IN A T-SHAPED QUANTUM TRANSISTOR BASED ON SCHOTTKY-GATE TECHNOLOGY, Physical review. B, Condensed matter, 53(15), 1996, pp. 9959-9963
Authors:
MARSO M
SCHIMPF K
FOX A
VANDERHART A
HARDTDEGEN H
HOLLFELDER M
KORDOS P
LUTH H
Citation: M. Marso et al., NOVEL HEMT LAYOUT - THE ROUNDHEMT, Electronics Letters, 31(7), 1995, pp. 589-591
Authors:
VESCAN L
DIEKER C
HARTMANN A
VANDERHART A
Citation: L. Vescan et al., SI SI1-XGEX DOTS GROWN BY SELECTIVE EPITAXY, Semiconductor science and technology, 9(4), 1994, pp. 387-391
Authors:
SCHUPPEN A
VESCAN L
MARSO M
VANDERHART A
LUTH H
BENEKING H
Citation: A. Schuppen et al., SUBMICROMETER SILICON PERMEABLE BASE TRANSISTORS WITH BURIED COSI2 GATES, Electronics Letters, 29(2), 1993, pp. 215-217
Risultati:
1-7
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