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Results: 1-10 |
Results: 10
CONTROLLED ANODIC-OXIDATION FOR HIGH-PRECISION ETCH DEPTH IN ALGAAS ILL-V SEMICONDUCTOR STRUCTURES
Authors: BUDA M SMALBRUGGE E GELUK EJ KAROUTA F ACKET GA VANDEROER TG KAUFMANN LMF
Citation: M. Buda et al., CONTROLLED ANODIC-OXIDATION FOR HIGH-PRECISION ETCH DEPTH IN ALGAAS ILL-V SEMICONDUCTOR STRUCTURES, Journal of the Electrochemical Society, 145(3), 1998, pp. 1076-1079
AMPLIFIED SPONTANEOUS EMISSION-SPECTROSCOPY ON SEMICONDUCTOR OPTICAL AMPLIFIERS SUBJECT TO ACTIVE LIGHT INJECTION
Authors: DEBOER AP CHRISTIANEN PCM MAAN JC RASING T TOLSTIKHIN VI VANDEROER TG DEVRIEZE HM
Citation: Ap. Deboer et al., AMPLIFIED SPONTANEOUS EMISSION-SPECTROSCOPY ON SEMICONDUCTOR OPTICAL AMPLIFIERS SUBJECT TO ACTIVE LIGHT INJECTION, Applied physics letters, 72(23), 1998, pp. 2936-2938
ANALYSIS OF 6-NM ALGAAS SQW LOW-CONFINEMENT LASER STRUCTURES FOR VERYHIGH-POWER OPERATION
Authors: BUDA M VANDEROER TG KAUFMANN LMF IORDACHE G CENGHER D DIACONESCU D PETRESCUPRAHOVA IB HAVERKORT JEM VANDERVLEUTEN W WOLTER JH
Citation: M. Buda et al., ANALYSIS OF 6-NM ALGAAS SQW LOW-CONFINEMENT LASER STRUCTURES FOR VERYHIGH-POWER OPERATION, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 173-179
PHYSICS OF OPTIMAL RESONANT-TUNNELING
Authors: RACEC PN STOICA T POPESCU C LEPSA M VANDEROER TG
Citation: Pn. Racec et al., PHYSICS OF OPTIMAL RESONANT-TUNNELING, Physical review. B, Condensed matter, 56(7), 1997, pp. 3595-3597
REGENERATIVE PULSATIONS IN SEMICONDUCTOR ETALON DUE TO COMPETITION BETWEEN CARRIER GENERATION AND HEATING EFFECTS ON BAND FILLING
Authors: TOLSTIKHIN VI GRIGORYANTS AV VANDEROER TG
Citation: Vi. Tolstikhin et al., REGENERATIVE PULSATIONS IN SEMICONDUCTOR ETALON DUE TO COMPETITION BETWEEN CARRIER GENERATION AND HEATING EFFECTS ON BAND FILLING, Journal of applied physics, 82(5), 1997, pp. 2023-2030
ACCURATE EQUIVALENT-NETWORK MODELING OF GAAS ALAS BASED RESONANT-TUNNELING DIODES WITH THIN BARRIER LAYERS/
Authors: KWASPEN JJM LEPSA MI VANDEROER TG VANDERVLEUTEN W
Citation: Jjm. Kwaspen et al., ACCURATE EQUIVALENT-NETWORK MODELING OF GAAS ALAS BASED RESONANT-TUNNELING DIODES WITH THIN BARRIER LAYERS/, Electronics Letters, 33(19), 1997, pp. 1657-1658
ACCURATE MODELING OF THE ACCUMULATION REGION OF A DOUBLE-BARRIER RESONANT-TUNNELING DIODE
Authors: HENDRIKS AMPJ MAGNUS W VANDEROER TG
Citation: Ampj. Hendriks et al., ACCURATE MODELING OF THE ACCUMULATION REGION OF A DOUBLE-BARRIER RESONANT-TUNNELING DIODE, Solid-state electronics, 39(5), 1996, pp. 703-712
SELF-PULSATING LASERS WITH QUANTUM-WELL SATURABLE ABSORBER
Authors: HOSKENS RCP VANDEROER TG VANDERPOEL CJ AMBROSIUS HPM
Citation: Rcp. Hoskens et al., SELF-PULSATING LASERS WITH QUANTUM-WELL SATURABLE ABSORBER, Applied physics letters, 67(10), 1995, pp. 1343-1345
DESIGN OF A 1 W, SINGLE FILAMENT LASER-DIODE
Authors: PETRESCUPRAHOVA IB BUDA M VANDEROER TG
Citation: Ib. Petrescuprahova et al., DESIGN OF A 1 W, SINGLE FILAMENT LASER-DIODE, IEICE transactions on electronics, E77C(9), 1994, pp. 1472-1478
AN EFFICIENT MONTE-CARLO DEVICE SIMULATION CODE BASED ON RIGOROUS APPLICATION OF INTERNAL SCATTERING
Authors: KONIJN P VANDEROER TG WIDDERSHOVEN FP
Citation: P. Konijn et al., AN EFFICIENT MONTE-CARLO DEVICE SIMULATION CODE BASED ON RIGOROUS APPLICATION OF INTERNAL SCATTERING, Solid-state electronics, 36(11), 1993, pp. 1579-1581
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