AAAAAA

   
Results: 1-13 |
Results: 13
ON THE INFLUENCE OF INDIUM ADDITION ON THE MECHANICAL-PROPERTIES OF GALLIUM-ARSENIDE AT ROOM-TEMPERATURE
Authors: KOUBAITI S LEVADE C COUDERC JJ VANDERSCHAEVE G
Citation: S. Koubaiti et al., ON THE INFLUENCE OF INDIUM ADDITION ON THE MECHANICAL-PROPERTIES OF GALLIUM-ARSENIDE AT ROOM-TEMPERATURE, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 1(2), 1998, pp. 141-146
ON THE EQUILIBRIUM-CONFIGURATIONS OF CLIMB-DISSOCIATED LOMER-COTTRELLDISLOCATIONS
Authors: BONNEVILLE J VANDERSCHAEVE G
Citation: J. Bonneville et G. Vanderschaeve, ON THE EQUILIBRIUM-CONFIGURATIONS OF CLIMB-DISSOCIATED LOMER-COTTRELLDISLOCATIONS, Philosophical magazine letters, 78(2), 1998, pp. 87-95
EXTENDED DEFECTS IN SEMICONDUCTORS .1.
Authors: PICHAUD B PIZZINI S CAVALLINI A VANDERSCHAEVE G
Citation: B. Pichaud et al., EXTENDED DEFECTS IN SEMICONDUCTORS .1., Journal de physique. III, 7(7), 1997, pp. 1379-1379
PHOTOPLASTIC EFFECT AND VICKERS MICROHARDNESS IN III-V AND II-VI SEMICONDUCTOR COMPOUNDS
Authors: KOUBAITI S COUDERC JJ LEVADE C VANDERSCHAEVE G
Citation: S. Koubaiti et al., PHOTOPLASTIC EFFECT AND VICKERS MICROHARDNESS IN III-V AND II-VI SEMICONDUCTOR COMPOUNDS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 234, 1997, pp. 865-868
A TRANSMISSION ELECTRON-MICROSCOPY STUDY OF ACCOMMODATION TWINS IN BA-NI-MN OXIDES
Authors: COUDERC JJ FRITSCH S BRIEU M VANDERSCHAEVE G
Citation: Jj. Couderc et al., A TRANSMISSION ELECTRON-MICROSCOPY STUDY OF ACCOMMODATION TWINS IN BA-NI-MN OXIDES, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 74(6), 1996, pp. 1351-1365
PHOTOPLASTIC EFFECT AND VICKERS MICROHARDNESS IN ZNS SPHALERITE
Authors: KOUBAITI S COUDERC JJ LEVADE C VANDERSCHAEVE G
Citation: S. Koubaiti et al., PHOTOPLASTIC EFFECT AND VICKERS MICROHARDNESS IN ZNS SPHALERITE, Scripta materialia, 34(6), 1996, pp. 869-875
VICKERS INDENTATION ON THE (001) FACES OF ZNS SPHALERITE UNDER UV ILLUMINATION AND IN DARKNESS - CRACK PATTERNS AND ROSETTE MICROSTRUCTURE
Authors: KOUBAITI S COUDERC JJ LEVADE C VANDERSCHAEVE G
Citation: S. Koubaiti et al., VICKERS INDENTATION ON THE (001) FACES OF ZNS SPHALERITE UNDER UV ILLUMINATION AND IN DARKNESS - CRACK PATTERNS AND ROSETTE MICROSTRUCTURE, Acta materialia, 44(8), 1996, pp. 3279-3291
HREM OBSERVATIONS OF ION BOMBARDMENT-INDUCED DISLOCATION LOOPS IN ZNO
Authors: COUDERC JJ DEMAI JJ VANDERSCHAEVE G PEIGNEY A
Citation: Jj. Couderc et al., HREM OBSERVATIONS OF ION BOMBARDMENT-INDUCED DISLOCATION LOOPS IN ZNO, Microscopy microanalysis microstructures, 6(2), 1995, pp. 229-235
A TRANSMISSION ELECTRON-MICROSCOPY STUDY OF LATTICE-DEFECTS IN MN3O4 HAUSMANNITE
Authors: COUDERC JJ FRITSCH S BRIEU M VANDERSCHAEVE G FAGOT M ROUSSET A
Citation: Jj. Couderc et al., A TRANSMISSION ELECTRON-MICROSCOPY STUDY OF LATTICE-DEFECTS IN MN3O4 HAUSMANNITE, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 70(5), 1994, pp. 1077-1094
A TEM IN-SITU INVESTIGATION OF DISLOCATION MOBILITY IN THE II-VI SEMICONDUCTOR COMPOUND ZNS - A QUANTITATIVE STUDY OF THE CATHODOPLASTIC EFFECT
Authors: LEVADE C FARESS A VANDERSCHAEVE G
Citation: C. Levade et al., A TEM IN-SITU INVESTIGATION OF DISLOCATION MOBILITY IN THE II-VI SEMICONDUCTOR COMPOUND ZNS - A QUANTITATIVE STUDY OF THE CATHODOPLASTIC EFFECT, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(5), 1994, pp. 855-870
FACTORS AFFECTING STACKING-FAULT CONTRAST IN TRANSMISSION ELECTRON-MICROSCOPY - COMPARISONS WITH IMAGE SIMULATIONS
Authors: VIGUIER B HEMKER KJ VANDERSCHAEVE G
Citation: B. Viguier et al., FACTORS AFFECTING STACKING-FAULT CONTRAST IN TRANSMISSION ELECTRON-MICROSCOPY - COMPARISONS WITH IMAGE SIMULATIONS, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(1), 1994, pp. 19-32
IN-SITU TEM STUDY OF DISLOCATION MOBILITY IN SEMICONDUCTING MATERIALS
Authors: LOUCHET F PELISSIER J CAILLARD D PEYRADE JP LEVADE C VANDERSCHAEVE G
Citation: F. Louchet et al., IN-SITU TEM STUDY OF DISLOCATION MOBILITY IN SEMICONDUCTING MATERIALS, Microscopy microanalysis microstructures, 4(2-3), 1993, pp. 199-210
DYNAMICS OF DISLOCATIONS IN II-VI COMPOUNDS UNDER ELECTRONIC EXCITATION - A TEM IN-SITU STUDY
Authors: FARESS A LEVADE C VANDERSCHAEVE G
Citation: A. Faress et al., DYNAMICS OF DISLOCATIONS IN II-VI COMPOUNDS UNDER ELECTRONIC EXCITATION - A TEM IN-SITU STUDY, Physica status solidi. a, Applied research, 138(2), 1993, pp. 583-589
Risultati: 1-13 |