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Results: 26-41/41
SILICON-HYDROGEN BONDING AND HYDROGEN DIFFUSION IN AMORPHOUS-SILICON
Authors: VANDEWALLE CG STREET RA
Citation: Cg. Vandewalle et Ra. Street, SILICON-HYDROGEN BONDING AND HYDROGEN DIFFUSION IN AMORPHOUS-SILICON, Physical review. B, Condensed matter, 51(16), 1995, pp. 10615-10618
NITROGEN DOPING IN ZNSE AND ZNTE
Authors: VANDEWALLE CG LAKS DB
Citation: Cg. Vandewalle et Db. Laks, NITROGEN DOPING IN ZNSE AND ZNTE, Solid state communications, 93(5), 1995, pp. 447-450
DOPANTS AND DEFECTS IN GAN
Authors: NEUGEBAUER J VANDEWALLE CG
Citation: J. Neugebauer et Cg. Vandewalle, DOPANTS AND DEFECTS IN GAN, Solid state communications, 93(5), 1995, pp. 467-468
HYDROGEN IN GAN - NOVEL ASPECTS OF A COMMON IMPURITY
Authors: NEUGEBAUER J VANDEWALLE CG
Citation: J. Neugebauer et Cg. Vandewalle, HYDROGEN IN GAN - NOVEL ASPECTS OF A COMMON IMPURITY, Physical review letters, 75(24), 1995, pp. 4452-4455
INVERTED ORDER OF ACCEPTOR AND DONOR LEVELS OF MONATOMIC HYDROGEN IN SILICON - REPLY
Authors: JOHNSON NM HERRING C VANDEWALLE CG
Citation: Nm. Johnson et al., INVERTED ORDER OF ACCEPTOR AND DONOR LEVELS OF MONATOMIC HYDROGEN IN SILICON - REPLY, Physical review letters, 74(22), 1995, pp. 4566-4566
INVERTED ORDER OF ACCEPTOR AND DONOR LEVELS OF MONATOMIC HYDROGEN IN SILICON (VOL 73, PG 130, 1994)
Authors: JOHNSON NM HERRING C VANDEWALLE CG
Citation: Nm. Johnson et al., INVERTED ORDER OF ACCEPTOR AND DONOR LEVELS OF MONATOMIC HYDROGEN IN SILICON (VOL 73, PG 130, 1994), Physical review letters, 74(10), 1995, pp. 1889-1889
ATOMIC GEOMETRY AND ELECTRONIC-STRUCTURE OF NATIVE DEFECTS IN GAN
Authors: NEUGEBAUER J VANDEWALLE CG
Citation: J. Neugebauer et Cg. Vandewalle, ATOMIC GEOMETRY AND ELECTRONIC-STRUCTURE OF NATIVE DEFECTS IN GAN, Physical review. B, Condensed matter, 50(11), 1994, pp. 8067-8070
ENERGIES OF VARIOUS CONFIGURATIONS OF HYDROGEN IN SILICON
Authors: VANDEWALLE CG
Citation: Cg. Vandewalle, ENERGIES OF VARIOUS CONFIGURATIONS OF HYDROGEN IN SILICON, Physical review. B, Condensed matter, 49(7), 1994, pp. 4579-4585
STRUCTURE, ENERGETICS, AND DISSOCIATION OF SI-H BONDS AT DANGLING BONDS IN SILICON
Authors: VANDEWALLE CG STREET RA
Citation: Cg. Vandewalle et Ra. Street, STRUCTURE, ENERGETICS, AND DISSOCIATION OF SI-H BONDS AT DANGLING BONDS IN SILICON, Physical review. B, Condensed matter, 49(20), 1994, pp. 14766-14769
ELECTRON-PARAMAGNETIC-RESONANCE OF MOLECULAR-HYDROGEN IN SILICON - COMMENT
Authors: BROWER KL MYERS SM EDWARDS AH JOHNSON NM VANDEWALLE CG POINDEXTER EH
Citation: Kl. Brower et al., ELECTRON-PARAMAGNETIC-RESONANCE OF MOLECULAR-HYDROGEN IN SILICON - COMMENT, Physical review letters, 73(10), 1994, pp. 1456-1456
INVERTED ORDER OF ACCEPTOR AND DONOR LEVELS OF MONATOMIC HYDROGEN IN SILICON
Authors: JOHNSON NM HERRING C VANDEWALLE CG
Citation: Nm. Johnson et al., INVERTED ORDER OF ACCEPTOR AND DONOR LEVELS OF MONATOMIC HYDROGEN IN SILICON, Physical review letters, 73(1), 1994, pp. 130-133
HYDROGEN-INDUCED METASTABLE CHANGES IN THE ELECTRICAL-CONDUCTIVITY OFPOLYCRYSTALLINE SILICON
Authors: NICKEL NH JOHNSON NM VANDEWALLE CG
Citation: Nh. Nickel et al., HYDROGEN-INDUCED METASTABLE CHANGES IN THE ELECTRICAL-CONDUCTIVITY OFPOLYCRYSTALLINE SILICON, Physical review letters, 72(21), 1994, pp. 3393-3396
PROCEEDINGS OF THE 7TH TRIESTE ICTP-IUPAP SEMICONDUCTOR SYMPOSIUM INTERNATIONAL-CENTER-FOR-THEORETICAL-PHYSICS TRIESTE, ITALY, 8-12 JUNE 1992
Authors: VANDEWALLE CG
Citation: Cg. Vandewalle, PROCEEDINGS OF THE 7TH TRIESTE ICTP-IUPAP SEMICONDUCTOR SYMPOSIUM INTERNATIONAL-CENTER-FOR-THEORETICAL-PHYSICS TRIESTE, ITALY, 8-12 JUNE 1992, Physica. B, Condensed matter, 185(1-4), 1993, pp. 9-10
DOPING LIMITS IN ZNSE
Authors: LAKS DB VANDEWALLE CG
Citation: Db. Laks et Cg. Vandewalle, DOPING LIMITS IN ZNSE, Physica. B, Condensed matter, 185(1-4), 1993, pp. 118-127
1ST-PRINCIPLES CALCULATIONS OF SOLUBILITIES AND DOPING LIMITS - LI, NA, AND N IN ZNSE
Authors: VANDEWALLE CG LAKS DB NEUMARK GF PANTELIDES ST
Citation: Cg. Vandewalle et al., 1ST-PRINCIPLES CALCULATIONS OF SOLUBILITIES AND DOPING LIMITS - LI, NA, AND N IN ZNSE, Physical review. B, Condensed matter, 47(15), 1993, pp. 9425-9434
ACCEPTOR DOPING IN ZNSE VERSUS ZNTE
Authors: LAKS DB VANDEWALLE CG NEUMARK GF PANTELIDES ST
Citation: Db. Laks et al., ACCEPTOR DOPING IN ZNSE VERSUS ZNTE, Applied physics letters, 63(10), 1993, pp. 1375-1377
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