Authors:
VANMAEKELBERGH D
HAMSTRA MA
VANPIETERSON L
Citation: D. Vanmaekelbergh et al., FREE-CARRIER GENERATION IN SEMICONDUCTORS INDUCED BY ABSORPTION OF SUBBAND GAP LIGHT - A PHOTOELECTROCHEMICAL STUDY WITH NANOPOROUS GAP, JOURNAL OF PHYSICAL CHEMISTRY B, 102(41), 1998, pp. 7997-8004
Authors:
VANDIJKEN A
JANSSEN AH
SMITSMANS MHP
VANMAEKELBERGH D
MEIJERINK A
Citation: A. Vandijken et al., SIZE-SELECTIVE PHOTOETCHING OF NANOCRYSTALLINE SEMICONDUCTOR PARTICLES, Chemistry of materials, 10(11), 1998, pp. 3513-3522
Authors:
KOPER MTM
CHAPARRO AM
TRIBUTSCH H
VANMAEKELBERGH D
Citation: Mtm. Koper et al., ELECTROLYTE ELECTROREFLECTANCE STUDY OF THE OSCILLATORY HYDROGEN-PEROXIDE REDUCTION ON N-GAAS, Langmuir, 14(14), 1998, pp. 3926-3931
Citation: D. Vanmaekelbergh et L. Vanpieterson, FREE-CARRIER GENERATION IN SEMICONDUCTORS INDUCED BY ABSORPTION OF SUBBAND-GAP LIGHT, Physical review letters, 80(4), 1998, pp. 821-824
Citation: Pe. Dejongh et D. Vanmaekelbergh, INVESTIGATION OF THE ELECTRONIC TRANSPORT-PROPERTIES OF NANOCRYSTALLINE PARTICULATE TIO2 ELECTRODES BY INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY, JOURNAL OF PHYSICAL CHEMISTRY B, 101(14), 1997, pp. 2716-2722
Authors:
SCHOENMAKERS GH
VANMAEKELBERGH D
KELLY JJ
Citation: Gh. Schoenmakers et al., THE MECHANISM OF CURRENT-DOUBLING REACTIONS AT ZNO PHOTOANODES, Journal of the Chemical Society. Faraday transactions, 93(6), 1997, pp. 1127-1132
Citation: D. Vanmaekelbergh et al., A SCHOTTKY-BARRIER JUNCTION BASED ON NANOMETER-SCALE INTERPENETRATINGGAP GOLD NETWORKS/, Advanced materials, 9(7), 1997, pp. 575
Citation: D. Vanmaekelbergh, DIRECT AND SURFACE-STATE MEDIATED ELECTRON-TRANSFER AT SEMICONDUCTOR ELECTROLYTE JUNCTIONS .1. A COMPARISON OF STEADY-STATE RESULTS/, Electrochimica acta, 42(7), 1997, pp. 1121-1134
Citation: D. Vanmaekelbergh, DIRECT AND SURFACE-STATE MEDIATED ELECTRON-TRANSFER AT SEMICONDUCTOR ELECTROLYTE JUNCTIONS .2. A COMPARISON OF THE INTERFACIAL ADMITTANCE/, Electrochimica acta, 42(7), 1997, pp. 1135-1141
Citation: Es. Kooij et D. Vanmaekelbergh, CATALYSIS AND PORE INITIATION IN THE ANODIC-DISSOLUTION OF SILICON INHF, Journal of the Electrochemical Society, 144(4), 1997, pp. 1296-1301
Citation: Bh. Erne et D. Vanmaekelbergh, THE LOW-FREQUENCY IMPEDANCE OF ANODICALLY DISSOLVING SEMICONDUCTOR AND METAL-ELECTRODES - A COMMON ORIGIN, Journal of the Electrochemical Society, 144(10), 1997, pp. 3385-3392
Authors:
VANMAEKELBERGH D
VANDELAGEMAAT J
SCHROPP REI
Citation: D. Vanmaekelbergh et al., OBSERVATION AND EXPLANATION OF QUANTUM EFFICIENCIES EXCEEDING UNITY IN AMORPHOUS-SILICON SOLAR-CELLS, Solar energy materials and solar cells, 41-2, 1996, pp. 537-542
Citation: Pe. Dejongh et D. Vanmaekelbergh, TRAP-LIMITED ELECTRONIC TRANSPORT IN ASSEMBLIES OF NANOMETER-SIZE TIO2 PARTICLES, Physical review letters, 77(16), 1996, pp. 3427-3430
Authors:
SCHOENMAKERS GH
VANMAEKELBERGH D
KELLY JJ
Citation: Gh. Schoenmakers et al., STUDY OF CHARGE-CARRIER DYNAMICS AT ILLUMINATED ZNO PHOTOANODES, Journal of physical chemistry, 100(8), 1996, pp. 3215-3220
Citation: Wp. Gomes et D. Vanmaekelbergh, IMPEDANCE SPECTROSCOPY AT SEMICONDUCTOR ELECTRODES - REVIEW AND RECENT DEVELOPMENTS, Electrochimica acta, 41(7-8), 1996, pp. 967-973
Citation: Fi. Marin et al., GREATLY ENHANCED SUB-BANDGAP PHOTOCURRENT IN POROUS GAP PHOTOANODES, Journal of the Electrochemical Society, 143(3), 1996, pp. 1137-1142
Citation: Bh. Erne et al., MORPHOLOGY AND STRONGLY ENHANCED PHOTORESPONSE OF GAP ELECTRODES MADEPOROUS BY ANODIC ETCHING, Journal of the Electrochemical Society, 143(1), 1996, pp. 305-314
Authors:
VANMAEKELBERGH D
MARIN FI
VANDELAGEMAAT J
Citation: D. Vanmaekelbergh et al., TRANSPORT OF PHOTOGENERATED CHARGE-CARRIERS THROUGH CRYSTALLINE GAP NETWORKS INVESTIGATED BY INTENSITY-MODULATED PHOTOCURRENT SPECTROSCOPY, Berichte der Bunsengesellschaft fur Physikalische Chemie, 100(5), 1996, pp. 616-626
Authors:
VANDELAGEMAAT J
PLAKMAN M
VANMAEKELBERGH D
KELLY JJ
Citation: J. Vandelagemaat et al., ENHANCEMENT OF THE LIGHT-TO-CURRENT CONVERSION EFFICIENCY IN AN N-SICSOLUTION DIODE BY POROUS ETCHING/, Applied physics letters, 69(15), 1996, pp. 2246-2248
Citation: Bh. Erne et al., POROUS ETCHING - A MEANS TO ENHANCE THE PHOTORESPONSE OF INDIRECT SEMICONDUCTORS, Advanced materials, 7(8), 1995, pp. 739-742
Citation: Mtm. Koper et D. Vanmaekelbergh, THE ORIGIN OF OSCILLATIONS DURING HYDROGEN-PEROXIDE REDUCTION ON GAASSEMICONDUCTOR ELECTRODES, Journal of physical chemistry, 99(11), 1995, pp. 3687-3696
Authors:
VANMAEKELBERGH D
ERNE BH
CHEUNG CW
TJERKSTRA RW
Citation: D. Vanmaekelbergh et al., ON THE INCREASE OF THE PHOTOCURRENT QUANTUM EFFICIENCY OF GAP PHOTOANODES DUE TO (PHOTO)ANODIC PRETREATMENTS, Electrochimica acta, 40(6), 1995, pp. 689-698