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Results: 1-22 |
Results: 22
SURFACE-ROUGHNESS OF SIO2 FROM A REMOTE MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION PROCESS
Authors: RACK MJ VASILESKA D FERRY DK SIDOROV M
Citation: Mj. Rack et al., SURFACE-ROUGHNESS OF SIO2 FROM A REMOTE MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2165-2170
QUANTUM TRANSPORT SIMULATION OF THE DOS FUNCTION, SELF-CONSISTENT FIELDS AND MOBILITY IN MOS INVERSION-LAYERS
Authors: VASILESKA D ELDRIDGE T BORDONE P FERRY DK
Citation: D. Vasileska et al., QUANTUM TRANSPORT SIMULATION OF THE DOS FUNCTION, SELF-CONSISTENT FIELDS AND MOBILITY IN MOS INVERSION-LAYERS, VLSI design (Print), 6(1-4), 1998, pp. 21-25
2D MONTE-CARLO SIMULATION OF HOLE AND ELECTRON-TRANSPORT IN STRAINED SI
Authors: FORMICONE GF VASILESKA D FERRY DK
Citation: Gf. Formicone et al., 2D MONTE-CARLO SIMULATION OF HOLE AND ELECTRON-TRANSPORT IN STRAINED SI, VLSI design (Print), 6(1-4), 1998, pp. 167-171
WAVE-FUNCTION SCARRING AND MAGNETOTRANSPORT IN QUANTUM DOTS
Authors: OCHIAI Y OKUBO Y SASAKI N BIRD JP ISHIBASHI K AOYAGI Y SUGANO T MICOLICH AP TAYLOR RP NEWBURY R VASILESKA D AKIS R FERRY DK
Citation: Y. Ochiai et al., WAVE-FUNCTION SCARRING AND MAGNETOTRANSPORT IN QUANTUM DOTS, Physica. B, Condensed matter, 251, 1998, pp. 353-357
STABILITY OF REGULAR ORBITS IN BALLISTIC QUANTUM DOTS
Authors: AKIS R VASILESKA D FERRY DK BIRD JP OKUBO Y OCHIAI Y ISHIBASHI JPK AOYAGI Y SUGANO T
Citation: R. Akis et al., STABILITY OF REGULAR ORBITS IN BALLISTIC QUANTUM DOTS, Physica. B, Condensed matter, 251, 1998, pp. 368-372
PERIODICALLY RECURRING WAVE-FUNCTION SCARRING AND MAGNETOTRANSPORT INQUANTUM DOTS
Authors: OKUBO Y SASAKI N OCHIAI Y BIRD JP ISHIBASHI K AOYAGI Y SUGANO T VASILESKA D AKIS R FERRY DK
Citation: Y. Okubo et al., PERIODICALLY RECURRING WAVE-FUNCTION SCARRING AND MAGNETOTRANSPORT INQUANTUM DOTS, Physica. B, Condensed matter, 246, 1998, pp. 266-269
LOW-TEMPERATURE MAGNETOTRANSPORT IN BALLISTIC QUANTUM DOTS AND WIRES
Authors: OCHIAI Y LIN LH YAMAMOTO K ISHIBASHI K AOYAGI Y SUGANO T BIRD JP VASILESKA D AKIS R FERRY DK
Citation: Y. Ochiai et al., LOW-TEMPERATURE MAGNETOTRANSPORT IN BALLISTIC QUANTUM DOTS AND WIRES, Semiconductor science and technology, 13(8A), 1998, pp. 15-17
3D SIMULATION OF GAAS ALGAAS QUANTUM-DOT POINT-CONTACT STRUCTURES/
Authors: VASILESKA D WYBOURNE MN GOODNICK SM GUNTHER AD
Citation: D. Vasileska et al., 3D SIMULATION OF GAAS ALGAAS QUANTUM-DOT POINT-CONTACT STRUCTURES/, Semiconductor science and technology, 13(8A), 1998, pp. 37-40
COMPATIBILITY OF COBALT AND CHROMIUM DEPLETION GATES WITH RPECVD UPPER GATE OXIDE FOR SILICON-BASED NANOSTRUCTURES
Authors: RACK MJ GUNTHER AD KHOURY M VASILESKA D FERRY DK SIDOROV M
Citation: Mj. Rack et al., COMPATIBILITY OF COBALT AND CHROMIUM DEPLETION GATES WITH RPECVD UPPER GATE OXIDE FOR SILICON-BASED NANOSTRUCTURES, Semiconductor science and technology, 13(8A), 1998, pp. 71-74
CARRIER TRANSPORT IN NANODEVICES
Authors: FERRY DK AKIS R UDIPI S VASILESKA D PIVIN DP CONNOLLY KM BIRD JP ISHIBASHI K AOYAGI Y SUGANO T OCHIAI Y
Citation: Dk. Ferry et al., CARRIER TRANSPORT IN NANODEVICES, JPN J A P 1, 36(3B), 1997, pp. 1841-1845
STABILITY OF REGULAR ORBITS IN BALLISTIC QUANTUM DOTS
Authors: OKUBO Y OCHIAI Y VASILESKA D AKIS R FERRY DK BIRD JP ISHIBASHI K AOYAGI Y SUGANO T
Citation: Y. Okubo et al., STABILITY OF REGULAR ORBITS IN BALLISTIC QUANTUM DOTS, Physics letters. A, 236(1-2), 1997, pp. 120-124
MODELING OF SUBMICRON SI1-XGEX-BASED MOSFETS BY SELF-CONSISTENT MONTE-CARLO
Authors: FORMICONE GF VASILESKA D FERRY DK
Citation: Gf. Formicone et al., MODELING OF SUBMICRON SI1-XGEX-BASED MOSFETS BY SELF-CONSISTENT MONTE-CARLO, Physica status solidi. b, Basic research, 204(1), 1997, pp. 531-533
TRANSPORT IN THE SURFACE CHANNEL OF STRAINED SI ON A RELAXED SI1-XGEXSUBSTRATE
Authors: FORMICONE GF VASILESKA D FERRY DK
Citation: Gf. Formicone et al., TRANSPORT IN THE SURFACE CHANNEL OF STRAINED SI ON A RELAXED SI1-XGEXSUBSTRATE, Solid-state electronics, 41(6), 1997, pp. 879-885
SCALED SILICON MOSFETS - UNIVERSAL MOBILITY BEHAVIOR
Authors: VASILESKA D FERRY DK
Citation: D. Vasileska et Dk. Ferry, SCALED SILICON MOSFETS - UNIVERSAL MOBILITY BEHAVIOR, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 577-583
SCALED SILICON MOSFETS - DEGRADATION OF THE TOTAL GATE CAPACITANCE
Authors: VASILESKA D SCHRODER DK FERRY DK
Citation: D. Vasileska et al., SCALED SILICON MOSFETS - DEGRADATION OF THE TOTAL GATE CAPACITANCE, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 584-587
QUANTUM TRANSPORT - SILICON INVERSION-LAYERS AND INALAS-INGAAS HETEROSTRUCTURES
Authors: VASILESKA D ELDRIDGE T FERRY DK
Citation: D. Vasileska et al., QUANTUM TRANSPORT - SILICON INVERSION-LAYERS AND INALAS-INGAAS HETEROSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2780-2785
QUANTUM TRANSPORT CALCULATIONS FOR SILICON INVERSION-LAYERS IN MOS STRUCTURES
Authors: VASILESKA D BORDONE P ELDRIDGE T FERRY DK
Citation: D. Vasileska et al., QUANTUM TRANSPORT CALCULATIONS FOR SILICON INVERSION-LAYERS IN MOS STRUCTURES, Physica. B, Condensed matter, 227(1-4), 1996, pp. 333-335
NUMERICAL MODELING OF SILICON QUANTUM DOTS
Authors: UDIPI S VASILESKA D FERRY DK
Citation: S. Udipi et al., NUMERICAL MODELING OF SILICON QUANTUM DOTS, Superlattices and microstructures, 20(3), 1996, pp. 343-347
COLLISION-DURATION TIME FOR OPTICAL-PHONON EMISSION IN SEMICONDUCTORS
Authors: BORDONE P VASILESKA D FERRY DK
Citation: P. Bordone et al., COLLISION-DURATION TIME FOR OPTICAL-PHONON EMISSION IN SEMICONDUCTORS, Physical review. B, Condensed matter, 53(7), 1996, pp. 3846-3855
CALCULATION OF THE AVERAGE INTERFACE FIELD IN INVERSION-LAYERS USING ZERO-TEMPERATURE GREENS-FUNCTION FORMALISM
Authors: VASILESKA D BORDONE P ELDRIDGE T FERRY DK
Citation: D. Vasileska et al., CALCULATION OF THE AVERAGE INTERFACE FIELD IN INVERSION-LAYERS USING ZERO-TEMPERATURE GREENS-FUNCTION FORMALISM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1841-1847
AN ENSEMBLE MONTE-CARLO STUDY OF HIGH-FIELD TRANSPORT IN BETA-SIC
Authors: TSUKIOKA K VASILESKA D FERRY DK
Citation: K. Tsukioka et al., AN ENSEMBLE MONTE-CARLO STUDY OF HIGH-FIELD TRANSPORT IN BETA-SIC, Physica. B, Condensed matter, 185(1-4), 1993, pp. 466-470
MODELING OF BETA-SIC MESFETS USING HYDRODYNAMIC EQUATIONS
Authors: ZHOU JR VASILESKA D FERRY DK
Citation: Jr. Zhou et al., MODELING OF BETA-SIC MESFETS USING HYDRODYNAMIC EQUATIONS, Solid-state electronics, 36(9), 1993, pp. 1289-1294
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