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Results: 1-13 |
Results: 13
QUANTUM QUASI-1D TRANSPORT IN QUASI-2D HIGHLY DISORDERED STRUCTURES
Authors: ARONZON BA BAKAUSHIN DA MEILIKHOV EZ VEDENEEV AS RYLKOV VV SIZOV VE
Citation: Ba. Aronzon et al., QUANTUM QUASI-1D TRANSPORT IN QUASI-2D HIGHLY DISORDERED STRUCTURES, Physica status solidi. b, Basic research, 205(1), 1998, pp. 83-86
MESOSCOPIC EFFECTS IN THE HOPPING CONDUCTIVITY REGION OF MACROSCOPIC QUASI-2-DIMENSIONAL SYSTEMS
Authors: ARONZON BA VEDENEEV AS RYLKOV VV
Citation: Ba. Aronzon et al., MESOSCOPIC EFFECTS IN THE HOPPING CONDUCTIVITY REGION OF MACROSCOPIC QUASI-2-DIMENSIONAL SYSTEMS, Semiconductors, 31(6), 1997, pp. 551-555
MANIFESTATION OF PERCOLATION CONDUCTIVITY OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORS IN THE SPECTRUM OF SHALLOW INTERFACE STATES
Authors: ARONZON BA BAKAUSHIN DA VEDENEEV AS RYLKOV VV SIZOV VE
Citation: Ba. Aronzon et al., MANIFESTATION OF PERCOLATION CONDUCTIVITY OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORS IN THE SPECTRUM OF SHALLOW INTERFACE STATES, Semiconductors, 31(12), 1997, pp. 1261-1267
INCOHERENT MESOSCOPIC PHENOMENA IN SEMICONDUCTOR STRUCTURE OF MACROSCOPIC SIZE
Authors: ARONZON BA RYLKOV VV VEDENEEV AS LEOTIN J
Citation: Ba. Aronzon et al., INCOHERENT MESOSCOPIC PHENOMENA IN SEMICONDUCTOR STRUCTURE OF MACROSCOPIC SIZE, Physica. A, 241(1-2), 1997, pp. 259-266
QUASI-ONE-DIMENSIONAL TRANSPORT OF NONDEGENERATE ELECTRONS IN 2-DIMENSIONAL SYSTEMS WITH A FLUCTUATION POTENTIAL
Authors: ARONZON BA MEILIKHOV EZ BAKAUSHIN DA VEDENEEV AS RYLKOV VV
Citation: Ba. Aronzon et al., QUASI-ONE-DIMENSIONAL TRANSPORT OF NONDEGENERATE ELECTRONS IN 2-DIMENSIONAL SYSTEMS WITH A FLUCTUATION POTENTIAL, JETP letters, 66(10), 1997, pp. 668-674
ELECTRICAL CHARACTERISTICS OF DIAMOND FILMS DIFFUSED USING LI SALTS
Authors: POPOVICI G SOKOLINA G SUNG T PRELAS MA ERMAKOV MG VEDENEEV AS
Citation: G. Popovici et al., ELECTRICAL CHARACTERISTICS OF DIAMOND FILMS DIFFUSED USING LI SALTS, Thin solid films, 279(1-2), 1996, pp. 93-97
OBSERVATION OF CORRELATION GAP IN QUASI-2D IMPURITY BAND OF SI-B MOS STRUCTURE
Authors: ARONZON BA RYLKOV VV VEDENEEV AS LEOTIN J
Citation: Ba. Aronzon et al., OBSERVATION OF CORRELATION GAP IN QUASI-2D IMPURITY BAND OF SI-B MOS STRUCTURE, Czechoslovak journal of Physics, 46, 1996, pp. 2529-2530
MESOSCOPIC EFFECTS IN MACROSCOPIC STRUCTURE WITH QUASI-2D HOPPING CONDUCTIVITY
Authors: ARONZON BA RYLKOV VV VEDENEEV AS
Citation: Ba. Aronzon et al., MESOSCOPIC EFFECTS IN MACROSCOPIC STRUCTURE WITH QUASI-2D HOPPING CONDUCTIVITY, Czechoslovak journal of Physics, 46, 1996, pp. 2365-2366
EVOLUTION OF AN IMPURITY BAND DURING LOW-TEMPERATURE APPLICATION OF AFIELD TO WEAKLY COMPENSATED SILICON WITH A HIGH DOPING LEVEL
Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG RYLKOV VV TKACH YY MODELLI A
Citation: As. Vedeneev et al., EVOLUTION OF AN IMPURITY BAND DURING LOW-TEMPERATURE APPLICATION OF AFIELD TO WEAKLY COMPENSATED SILICON WITH A HIGH DOPING LEVEL, JETP letters, 60(6), 1994, pp. 475-480
VERY SENSITIVE FACILITY FOR PRECISION-MEASUREMENTS OF MAGNETORESISTANCE AND THE HALL-EFFECT IN SEMICONDUCTOR STRUCTURES
Authors: VEDENEEV AS ZHDAN AG PONOMAREV AN SIZOV VE
Citation: As. Vedeneev et al., VERY SENSITIVE FACILITY FOR PRECISION-MEASUREMENTS OF MAGNETORESISTANCE AND THE HALL-EFFECT IN SEMICONDUCTOR STRUCTURES, Instruments and experimental techniques, 37(4), 1994, pp. 479-484
FIELD-EFFECT IN WEAKLY COMPENSATED SI UNDER CONDITION OF IMPURITY CONDUCTION
Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG RYLKOV VV TKACH YY MODELLI A
Citation: As. Vedeneev et al., FIELD-EFFECT IN WEAKLY COMPENSATED SI UNDER CONDITION OF IMPURITY CONDUCTION, Applied physics letters, 64(19), 1994, pp. 2566-2568
ELECTRON LOCALIZATION DURING NONLINEAR SCREENING OF THE SMALL-SCALE FLUCTUATION POTENTIAL OF A GAAS-ALGAAS HETEROJUNCTION
Authors: VEDENEEV AS ZHDAN AG SIZOV VE GERGEL VA
Citation: As. Vedeneev et al., ELECTRON LOCALIZATION DURING NONLINEAR SCREENING OF THE SMALL-SCALE FLUCTUATION POTENTIAL OF A GAAS-ALGAAS HETEROJUNCTION, JETP letters, 58(5), 1993, pp. 375-379
CONCENTRATION-INDUCED TRANSITION TO A CONDUCTIVITY WITH A CONSTANT HOPPING LENGTH INVOLVING STATES NEAR THE FERMI-LEVEL IN A FIELD-EFFECT IN SLIGHTLY COMPENSATED SI-B
Authors: VEDENEEV AS GAIVORONSKII AG ZHDAN AG MODELLI A RYLKOV VV TKACH YY
Citation: As. Vedeneev et al., CONCENTRATION-INDUCED TRANSITION TO A CONDUCTIVITY WITH A CONSTANT HOPPING LENGTH INVOLVING STATES NEAR THE FERMI-LEVEL IN A FIELD-EFFECT IN SLIGHTLY COMPENSATED SI-B, JETP letters, 57(10), 1993, pp. 662-666
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