Authors:
STARING EGJ
DEMANDT RCJE
BRAUN D
RIKKEN GLJ
KESSENER YARR
VENHUIZEN AHJ
VANKNIPPENBERG MMF
BOUWMANS M
Citation: Egj. Staring et al., ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE EFFICIENCY OF POLY(P-PHENYLENEVINYLENE) DERIVATIVES, Synthetic metals, 71(1-3), 1995, pp. 2179-2180
Citation: D. Braun et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE EFFICIENCY IN POLY(DIALKOXY-P-PHENYLENEVINYLENE), Synthetic metals, 66(1), 1994, pp. 75-79
Citation: Nj. Pulsford et al., BEHAVIOR OF A RECTIFYING JUNCTION AT THE INTERFACE BETWEEN POROUS SILICON AND ITS SUBSTRATE, Journal of applied physics, 75(1), 1994, pp. 636-638
Citation: Yarr. Kessener et al., QUENCHING OF POROUS SILICON LUMINESCENCE AT INTERMEDIATE TEMPERATURES, Journal of luminescence, 57(1-6), 1993, pp. 77-81
Citation: Glja. Rikken et al., TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON - REPLY, Applied physics letters, 63(4), 1993, pp. 566-566