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Results:
1-15
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Results: 15
Authors:
BIGGERI U
BORCHI E
BRUZZI M
LI Z
VERBITSKAYA E
Citation: U. Biggeri et al., RADIATION-DAMAGE ON SILICON AFTER VERY HIGH NEUTRON FLUENCE IRRADIATION, Nuclear physics. B, 1998, pp. 475-480
Authors:
BIGGERI U
BORCHI E
BRUZZI M
LI Z
VERBITSKAYA E
Citation: U. Biggeri et al., STUDY OF ELECTRICAL-PROPERTIES OF HIGH-RESISTIVITY AND MEDIUM-RESISTIVITY SILICON DETECTORS IRRADIATED WITH VERY HIGH NEUTRON FLUENCE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 176-179
Authors:
LI Z
EREMIN V
ILYASHENKO I
IVANOV A
VERBITSKAYA E
Citation: Z. Li et al., INVESTIGATION OF EPITAXIAL SILICON LAYERS AS A MATERIAL FOR RADIATION-HARDENED SILICON DETECTORS, IEEE transactions on nuclear science, 45(3), 1998, pp. 585-590
Authors:
BIGGERI U
BORCHI E
BRUZZI M
EREMIN V
LEROY C
LI Z
MENICHELLI D
PIROLLO S
SCIORTINO S
VERBITSKAYA E
Citation: U. Biggeri et al., A COMPARATIVE-STUDY OF HEAVILY IRRADIATED SILICON AND NON IRRADIATED SI LEC GAAS DETECTORS, IEEE transactions on nuclear science, 45(3), 1998, pp. 597-601
Authors:
LI Z
LI CJ
EREMIN V
VERBITSKAYA E
Citation: Z. Li et al., DIRECT OBSERVATION AND MEASUREMENTS OF NEUTRON-INDUCED DEEP LEVELS RESPONSIBLE FOR N-EFF CHANGES IN HIGH-RESISTIVITY SILICON DETECTORS USING TCT, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(3), 1997, pp. 297-307
Authors:
EREMIN V
VERBITSKAYA E
LI Z
SIDOROV A
FRETWURST E
LINDSTROM G
Citation: V. Eremin et al., SCANNING TRANSIENT CURRENT STUDY OF THE I-V STABILIZATION PHENOMENA IN SILICON DETECTORS IRRADIATED BY FAST-NEUTRONS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(3), 1997, pp. 350-355
Authors:
LI Z
LI CJ
VERBITSKAYA E
EREMIN V
Citation: Z. Li et al., TEMPERATURE-STIMULATED ABNORMAL ANNEALING OF NEUTRON-INDUCED DAMAGE IN HIGH-RESISTIVITY SILICON DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 385(2), 1997, pp. 321-329
Authors:
EREMIN V
IVANOV A
VERBITSKAYA E
LI Z
SCHMIDT B
Citation: V. Eremin et al., LONG-TERM INSTABILITIES IN THE DEFECT ASSEMBLY IN IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS, IEEE transactions on nuclear science, 44(3), 1997, pp. 819-824
Authors:
LI Z
LI CJ
VERBITSKAYA E
Citation: Z. Li et al., STUDY OF BULK DAMAGE IN HIGH-RESISTIVITY SILICON DETECTORS IRRADIATEDBY HIGH-DOSE OF CO-60 GAMMA-RADIATION, IEEE transactions on nuclear science, 44(3), 1997, pp. 834-839
Authors:
LI Z
LI CJ
EREMIN V
VERBITSKAYA E
Citation: Z. Li et al., INVESTIGATION ON THE N-EFF REVERSE ANNEALING EFFECT USING TSC I-DLTS - RELATIONSHIP BETWEEN NEUTRON-INDUCED MICROSCOPIC DEFECTS AND SILICONDETECTOR ELECTRICAL DEGRADATIONS/, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 377(2-3), 1996, pp. 265-275
Authors:
EREMIN V
STROKAN N
VERBITSKAYA E
LI Z
Citation: V. Eremin et al., DEVELOPMENT OF TRANSIENT CURRENT AND CHARGE TECHNIQUES FOR THE MEASUREMENT OF EFFECTIVE NET CONCENTRATION OF IONIZED CHARGES (N-EFF) IN THESPACE-CHARGE REGION OF P-N-JUNCTION DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 372(3), 1996, pp. 388-398
Authors:
EREMIN V
IVANOV A
VERBITSKAYA E
LI Z
KRANER HW
Citation: V. Eremin et al., ELEVATED-TEMPERATURE ANNEALING OF THE NEUTRON-INDUCED REVERSE CURRENTAND CORRESPONDING DEFECT LEVELS IN LOW AND HIGH-RESISTIVITY SILICON DETECTORS, IEEE transactions on nuclear science, 42(4), 1995, pp. 387-393
Authors:
VERBITSKAYA E
EREMIN V
STROKAN N
KEMMER J
SCHMIDT B
VONBORANY J
Citation: E. Verbitskaya et al., PHYSICAL ASPECTS OF PRECISE SPECTROMETRY OF ALPHA-PARTICLES WITH SILICON PN-JUNCTION DETECTORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(1), 1994, pp. 51-61
Authors:
SCHMIDT B
EREMIN V
IVANOV A
STROKAN N
VERBITSKAYA E
LI Z
Citation: B. Schmidt et al., RELAXATION OF RADIATION-DAMAGE IN SILICON PLANAR DETECTORS, Journal of applied physics, 76(7), 1994, pp. 4072-4076
Authors:
ZHENG L
EREMIN V
STROKAN N
VERBITSKAYA E
Citation: L. Zheng et al., INVESTIGATION OF THE TYPE INVERSION PHENOMENA - RESISTIVITY AND CARRIER MOBILITY IN THE SPACE-CHARGE REGION AND ELECTRICAL NEUTRAL BULK IN NEUTRON-IRRADIATED SILICON P-N JUNCTION DETECTORS(), IEEE transactions on nuclear science, 40(4), 1993, pp. 367-375
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