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Results: 1-25 |
Results: 25
ELECTRONIC AND STRUCTURAL-PROPERTIES OF THE 6H-SIC(0001) SURFACES
Authors: GUNNELLA R VEUILLEN JY BERTHET A TAN TAN
Citation: R. Gunnella et al., ELECTRONIC AND STRUCTURAL-PROPERTIES OF THE 6H-SIC(0001) SURFACES, Surface review and letters, 5(1), 1998, pp. 187-191
X-RAY-ABSORPTION SPECTROSCOPY STUDY OF ATOMIC-STRUCTURE OF EPITAXIAL ERSI1.7(0001) ON SI(111)
Authors: GUNNELLA R VEUILLEN JY TAN TAN FLANK AM
Citation: R. Gunnella et al., X-RAY-ABSORPTION SPECTROSCOPY STUDY OF ATOMIC-STRUCTURE OF EPITAXIAL ERSI1.7(0001) ON SI(111), Physical review. B, Condensed matter, 57(7), 1998, pp. 4154-4159
GROWTH OF SI ON DISORDERED SI(111)(1X1) SURFACES
Authors: VEUILLEN JY MALLET P GOMEZRODRIGUEZ JM
Citation: Jy. Veuillen et al., GROWTH OF SI ON DISORDERED SI(111)(1X1) SURFACES, Surface science, 404(1-3), 1998, pp. 295-298
SURFACE DYNAMICS AND SCANNING-TUNNELING-MICROSCOPY - DIFFUSION OF PB ATOMS ON SI(111)-(7X7)
Authors: GOMEZRODRIGUEZ JM VEUILLEN JY CINTI RC
Citation: Jm. Gomezrodriguez et al., SURFACE DYNAMICS AND SCANNING-TUNNELING-MICROSCOPY - DIFFUSION OF PB ATOMS ON SI(111)-(7X7), Surface review and letters, 4(2), 1997, pp. 335-342
SURFACE CHARACTER IN THE EXPERIMENTAL FERMI-SURFACE OF EPITAXIAL ERSI1.7(0001) BY PHOTOEMISSION SPECTROSCOPY
Authors: MARTINGAGO JA VEUILLEN JY CASADO C TAN TAN
Citation: Ja. Martingago et al., SURFACE CHARACTER IN THE EXPERIMENTAL FERMI-SURFACE OF EPITAXIAL ERSI1.7(0001) BY PHOTOEMISSION SPECTROSCOPY, Physical review. B, Condensed matter, 55(8), 1997, pp. 5129-5135
SURFACE ATOMIC-STRUCTURE OF EPITAXIALLY GROWN ERBIUM SILICIDE FILMS ON SI(111)7X7
Authors: MARTINGAGO JA GOMEZRODRIGUEZ JM VEUILLEN JY
Citation: Ja. Martingago et al., SURFACE ATOMIC-STRUCTURE OF EPITAXIALLY GROWN ERBIUM SILICIDE FILMS ON SI(111)7X7, Physical review. B, Condensed matter, 55(8), 1997, pp. 5136-5140
SCANNING-TUNNELING-MICROSCOPY STUDY OF THE SI(111)-(ROOT-3X-ROOT-3)-PB MOSAIC PHASE
Authors: GOMEZRODRIGUEZ JM VEUILLEN JY CINTI RC
Citation: Jm. Gomezrodriguez et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF THE SI(111)-(ROOT-3X-ROOT-3)-PB MOSAIC PHASE, Surface science, 377(1-3), 1997, pp. 45-49
EXPERIMENTAL FERMI-SURFACE DETERMINATION OF EPITAXIAL ERSI1.7(0001) ON SI(111)
Authors: MARTINGAGO JA VEUILLEN JY CASADO C TAN TAN
Citation: Ja. Martingago et al., EXPERIMENTAL FERMI-SURFACE DETERMINATION OF EPITAXIAL ERSI1.7(0001) ON SI(111), Surface science, 377(1-3), 1997, pp. 172-176
ADSORPTION AND DIFFUSION OF SINGLE PB ATOMS ON SI(111)7X7 AND SI(111)5X5 SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: VEUILLEN JY GOMEZRODRIGUEZ JM BARO AM CINTI RC
Citation: Jy. Veuillen et al., ADSORPTION AND DIFFUSION OF SINGLE PB ATOMS ON SI(111)7X7 AND SI(111)5X5 SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Surface science, 377(1-3), 1997, pp. 847-850
PB SI(111) INVESTIGATION AT THE ULTRALOW-COVERAGE RANGE/
Authors: GOMEZRODRIGUEZ JM VEUILLEN JY CINTI RC
Citation: Jm. Gomezrodriguez et al., PB SI(111) INVESTIGATION AT THE ULTRALOW-COVERAGE RANGE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1005-1009
SUBMONOLAYER PB DEPOSITION ON SI(100) STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: VEUILLEN JY GOMEZRODRIGUEZ JM CINTI RC
Citation: Jy. Veuillen et al., SUBMONOLAYER PB DEPOSITION ON SI(100) STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1010-1014
OXIDATION OF THIN ERBIUM AND ERBIUM SILICIDE OVERLAYERS IN CONTACT WITH SILICON-OXIDE FILMS THERMALLY GROWS ON SILICON
Authors: KENNOU S LADAS S GRIMALDI MG TAN TAN VEUILLEN JY
Citation: S. Kennou et al., OXIDATION OF THIN ERBIUM AND ERBIUM SILICIDE OVERLAYERS IN CONTACT WITH SILICON-OXIDE FILMS THERMALLY GROWS ON SILICON, Applied surface science, 102, 1996, pp. 142-146
GROWTH AND MORPHOLOGY OF EPITAXIAL ERSI1.7 FILMS ON SI(111)7X7 STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: MARTINGAGO JA GOMEZRODRIGUEZ JM VEUILLEN JY
Citation: Ja. Martingago et al., GROWTH AND MORPHOLOGY OF EPITAXIAL ERSI1.7 FILMS ON SI(111)7X7 STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Surface science, 366(3), 1996, pp. 491-500
GROWTH AND CHARACTERIZATION OF THE RE SI(111) INTERFACE/
Authors: SIOKOU A KENNOU S LADAS S TAN TAN VEUILLEN JY
Citation: A. Siokou et al., GROWTH AND CHARACTERIZATION OF THE RE SI(111) INTERFACE/, Surface science, 352, 1996, pp. 628-633
REAL-TIME OBSERVATION OF THE DYNAMICS OF SINGLE PB ATOMS ON SI(111)-(7X7) BY SCANNING-TUNNELING-MICROSCOPY
Authors: GOMEZRODRIGUEZ JM SAENZ JJ BARO AM VEUILLEN JY CINTI RC
Citation: Jm. Gomezrodriguez et al., REAL-TIME OBSERVATION OF THE DYNAMICS OF SINGLE PB ATOMS ON SI(111)-(7X7) BY SCANNING-TUNNELING-MICROSCOPY, Physical review letters, 76(5), 1996, pp. 799-802
HYDROGEN ADSORPTION ON ERSI1.7(0001)
Authors: VEUILLEN JY TAN TA LADAS S KENNOU S
Citation: Jy. Veuillen et al., HYDROGEN ADSORPTION ON ERSI1.7(0001), Physical review. B, Condensed matter, 52(15), 1995, pp. 10796-10799
EXTENDED SYNCHROTRON X-RAY REFLECTIVITY STUDY OF A SM-BASED LAYER BURIED INTO CDTE(001)
Authors: BOUDET N EYMERY J RENAUD G ROUVIERE JL VEUILLEN JY BRUN D DAUDIN B
Citation: N. Boudet et al., EXTENDED SYNCHROTRON X-RAY REFLECTIVITY STUDY OF A SM-BASED LAYER BURIED INTO CDTE(001), Surface science, 327(3), 1995, pp. 515-520
STRUCTURE OF EPITAXIAL GADOLINIUM SILICIDE THIN-FILMS OBTAINED BY GD EVAPORATION AND BY GD AND SI COEVAPORATION ON SI(111)
Authors: PESCHER C ERMOLIEFF A VEUILLEN JY TAN TN BRUNEL M
Citation: C. Pescher et al., STRUCTURE OF EPITAXIAL GADOLINIUM SILICIDE THIN-FILMS OBTAINED BY GD EVAPORATION AND BY GD AND SI COEVAPORATION ON SI(111), Solid state communications, 94(10), 1995, pp. 837-841
EPITAXIAL-GROWTH AND CHARACTERIZATION OF Y2CO17(0001) THIN-FILMS DEPOSITED ON W(110)
Authors: ROBAUT F MILKULIK P CHERIEF N MCGRATH OFK GIVORD D BAUMBACH T VEUILLEN JY
Citation: F. Robaut et al., EPITAXIAL-GROWTH AND CHARACTERIZATION OF Y2CO17(0001) THIN-FILMS DEPOSITED ON W(110), Journal of applied physics, 78(2), 1995, pp. 997-1003
SEMICONDUCTING RHENIUM SILICIDE THIN-FILMS ON SI(111)
Authors: TAN TAN VEUILLEN JY MURET P KENNOU S SIOKOU A LADAS S RAZAFINDRAMISA FL BRUNEL M
Citation: Tan. Tan et al., SEMICONDUCTING RHENIUM SILICIDE THIN-FILMS ON SI(111), Journal of applied physics, 77(6), 1995, pp. 2514-2518
ATOMIC-STRUCTURE OF EPITAXIAL ER SILICIDES GROWN ON SI(111) STUDIED BY SURFACE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE
Authors: TUILIER MH PIRRI C WETZEL P GEWINNER G VEUILLEN JY TAN TAN
Citation: Mh. Tuilier et al., ATOMIC-STRUCTURE OF EPITAXIAL ER SILICIDES GROWN ON SI(111) STUDIED BY SURFACE EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE, Surface science, 309, 1994, pp. 710-715
FORMATION AND ELECTRONIC-PROPERTIES OF ERBIUM SILICIDE ON SI(100)
Authors: KENNOU S VEUILLEN JY TAN TAN
Citation: S. Kennou et al., FORMATION AND ELECTRONIC-PROPERTIES OF ERBIUM SILICIDE ON SI(100), Surface science, 309, 1994, pp. 258-263
GROWTH OF SILICON THIN-FILMS ON ERBIUM SILICIDE BY SOLID-PHASE EPITAXY
Authors: VEUILLEN JY DANTERROCHES C TAN TAN
Citation: Jy. Veuillen et al., GROWTH OF SILICON THIN-FILMS ON ERBIUM SILICIDE BY SOLID-PHASE EPITAXY, Journal of applied physics, 75(1), 1994, pp. 223-226
SI ERSI1.7 INTERFACES AND SI REEPITAXY ON THE ERSI1.7/SI STRUCTURE/
Authors: TAN TAN VEUILLEN JY KENNOU S MAGAUD L
Citation: Tan. Tan et al., SI ERSI1.7 INTERFACES AND SI REEPITAXY ON THE ERSI1.7/SI STRUCTURE/, Applied surface science, 70-1, 1993, pp. 520-525
ELECTRONIC-STRUCTURE OF ERBIUM SILICIDE ULTRA-THIN FILMS
Authors: VEUILLEN JY TAN TAN LOLLMAN DBB
Citation: Jy. Veuillen et al., ELECTRONIC-STRUCTURE OF ERBIUM SILICIDE ULTRA-THIN FILMS, Surface science, 293(1-2), 1993, pp. 86-92
Risultati: 1-25 |