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Results:
1-9
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Results: 9
Authors:
FRIGERI C
BRINCIOTTI A
DIPAOLA A
RITCHIE DM
LONGO F
VIDIMARI F
Citation: C. Frigeri et al., COMPOSITIONAL INHOMOGENEITY AND STRAIN RELAXATION IN INGAAS SQWS MOVPE-GROWN ON TILTED GAAS SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 101-105
Authors:
FRANCESIO L
FRANZOSI P
CALDIRONI M
VITALI L
DELLAGIOVANNA M
DIPAOLA A
VIDIMARI F
PELLEGRINO S
Citation: L. Francesio et al., ORDERING EFFECTS IN INGAP GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LP-MOVPE/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(8), 1996, pp. 975-983
Authors:
RITCHIE DM
DIPAOLA A
TROMBY M
DELLAGIOVANNI M
DIEGIDIO M
VIDIMARI F
Citation: Dm. Ritchie et al., SILICON DELTA-DOPED ALGAAS BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY (VOL 145, PG 447, 1994), Journal of crystal growth, 153(1-2), 1995, pp. 68-68
Authors:
CARNERA A
GASPAROTTO A
TROMBY M
CALDIRONI M
PELLEGRINO S
VIDIMARI F
BOCCHI C
FRIGERI C
Citation: A. Carnera et al., PRODUCTION OF SEMIINSULATING LAYERS IN N-DOPED INP BY FE IMPLANTATION(VOL 76, PG 5085, 1994), Journal of applied physics, 77(8), 1995, pp. 4159-4159
Authors:
CALDIRONI M
VITALI L
DELLAGIOVANNA M
DIPAOLA A
VIDIMARI F
PELLEGRINO S
FERRARI C
FRANZOSI P
Citation: M. Caldironi et al., CHARACTERIZATION OF HIGH-QUALITY INGAP GAAS AND INGAASP/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 158-163
Authors:
TROMBY M
DIPAOLA A
RITCHIE DM
DELLAGIOVANNA M
DIEGIDIO M
VIDIMARI F
Citation: M. Tromby et al., SI DELTA-DOPED GAAS AND ALGAAS BY LOW-PRESSURE MOVPE, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 204-208
Authors:
RITCHIE DM
DIPAOLA A
TROMBY M
DELLAGIOVANNA M
DIEGIDIO M
VIDIMARI F
Citation: Dm. Ritchie et al., SILICON DELTA-DOPED ALGAAS BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 145(1-4), 1994, pp. 447-454
Authors:
CARNERA A
GASPAROTTO A
TROMBY M
CALDIRONI M
PELLEGRINO S
VIDIMARI F
BOCCHI C
FRIGERI C
Citation: A. Carnera et al., PRODUCTION OF SEMIINSULATING LAYERS IN N-DOPED INP BY FE IMPLANTATION, Journal of applied physics, 76(9), 1994, pp. 5085-5094
Authors:
GASPAROTTO A
CARNERA A
ARZENTON G
TROMBY M
PELLEGRINO S
VIDIMARI F
CALDIRONI M
Citation: A. Gasparotto et al., ION-IMPLANTATION AND ANNEALING OF FE FOR SEMIINSULATING LAYERS FORMATION IN INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 773-776
Risultati:
1-9
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