Citation: Tj. Vogt et al., MOLECULAR-BEAM EPITAXY GROWTH OF INGAP MULTIPLE-QUANTUM-WELL STRUCTURES ON GAP FOR OPTICAL MODULATORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2248-2251
Authors:
KIM JW
LEE YJ
VOGT TJ
PATRIZI GA
ROBINSON GY
LILE DL
Citation: Jw. Kim et al., WANNIER-STARK LOCALIZATION IN A STRAINED-LAYER INXGA1-XAS INYGA1-YP SUPERLATTICE/, Journal of applied physics, 79(9), 1996, pp. 7161-7163
Authors:
WATSON ME
CHILLA JLA
ROCCA JJ
KIM JW
LILE DL
VOGT TJ
ROBINSON GY
Citation: Me. Watson et al., SATURATION INTENSITY AND TIME RESPONSE OF INGAAS-INGAP MQW OPTICAL MODULATORS, IEEE journal of quantum electronics, 31(2), 1995, pp. 254-260
Citation: Jw. Kim et al., STRAINED-LAYER IN1-XAS GAAS AND INXGA1-XAS/INYGA1-YP MULTIPLE-QUANTUM-WELL OPTICAL MODULATORS GROWN BY GAS-SOURCE MBE/, IEEE photonics technology letters, 5(9), 1993, pp. 987-989