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Results: 1-18 |
Results: 18
REDUCTION OF TIN OXIDE BY HYDROGEN RADICALS
Authors: WALLINGA J ARNOLDBIK WM VREDENBERG AM SCHROPP REI VANDERWEG WF
Citation: J. Wallinga et al., REDUCTION OF TIN OXIDE BY HYDROGEN RADICALS, JOURNAL OF PHYSICAL CHEMISTRY B, 102(32), 1998, pp. 6219-6224
NITRIDE FORMATION IN IRON AFTER NITROGEN IMPLANTATION IN A NICKEL TOPLAYER
Authors: INIA DK TICHELAAR FD ARNOLDBIK WM VREDENBERG AM BOERMA DO
Citation: Dk. Inia et al., NITRIDE FORMATION IN IRON AFTER NITROGEN IMPLANTATION IN A NICKEL TOPLAYER, Journal of materials research, 13(2), 1998, pp. 440-445
DETERMINATION OF PHOTOELECTRON ATTENUATION LENGTHS IN THIN OXIDE-FILMS ON IRON SURFACES USING QUANTITATIVE XPS AND ELASTIC RECOIL DETECTION
Authors: ROOSENDAAL SJ GIEBELS IAME VREDENBERG AM HABRAKEN FHPM
Citation: Sj. Roosendaal et al., DETERMINATION OF PHOTOELECTRON ATTENUATION LENGTHS IN THIN OXIDE-FILMS ON IRON SURFACES USING QUANTITATIVE XPS AND ELASTIC RECOIL DETECTION, Surface and interface analysis, 26(10), 1998, pp. 758-765
THE INFLUENCE OF ADSORBED N IN THE INITIAL-STAGES OF OXIDATION OF IRON
Authors: ROOSENDAAL SJ VREDENBERG AM HABRAKEN FHPM
Citation: Sj. Roosendaal et al., THE INFLUENCE OF ADSORBED N IN THE INITIAL-STAGES OF OXIDATION OF IRON, Surface science, 404(1-3), 1998, pp. 135-139
ELLIPSOMETRY AND HIGH-ENERGY ION-SCATTERING STUDY OF THE REDUCTION OFTHIN OXIDE LAYERS ON CO(10(1)OVER-BAR-0)
Authors: GORTS PC VREDENBERG AM HABRAKEN FHPM
Citation: Pc. Gorts et al., ELLIPSOMETRY AND HIGH-ENERGY ION-SCATTERING STUDY OF THE REDUCTION OFTHIN OXIDE LAYERS ON CO(10(1)OVER-BAR-0), Surface science, 370(2-3), 1997, pp. 207-212
ON THE INITIAL OXIDATION OF IRON - QUANTIFICATION OF GROWTH-KINETICS BY THE COUPLED-CURRENTS APPROACH
Authors: GRAAT PCJ SOMERS MAJ VREDENBERG AM MITTEMEIJER EJ
Citation: Pcj. Graat et al., ON THE INITIAL OXIDATION OF IRON - QUANTIFICATION OF GROWTH-KINETICS BY THE COUPLED-CURRENTS APPROACH, Journal of applied physics, 82(3), 1997, pp. 1416-1422
LOW-TEMPERATURE NITRIDING OF IRON THROUGH A THIN NICKEL LAYER
Authors: INIA DK PROPPER MH ARNOLDBIK WM VREDENBERG AM BOERMA DO
Citation: Dk. Inia et al., LOW-TEMPERATURE NITRIDING OF IRON THROUGH A THIN NICKEL LAYER, Applied physics letters, 70(10), 1997, pp. 1245-1247
NITROGEN DIFFUSION AND NITRIDE FORMATION DURING AND AFTER IMPLANTATION IN NI FE BILAYERS/
Authors: INIA DK FEINER FWJ ARNOLDBIK WM VREDENBERG AM BOERMA DO
Citation: Dk. Inia et al., NITROGEN DIFFUSION AND NITRIDE FORMATION DURING AND AFTER IMPLANTATION IN NI FE BILAYERS/, Surface & coatings technology, 83(1-3), 1996, pp. 65-69
MECHANISM OF MEV ION-INDUCED HYDROGEN DEPLETION FROM ORGANIC LAYERS
Authors: MAREE CHM VREDENBERG AM HABRAKEN FHPM
Citation: Chm. Maree et al., MECHANISM OF MEV ION-INDUCED HYDROGEN DEPLETION FROM ORGANIC LAYERS, Materials chemistry and physics, 46(2-3), 1996, pp. 198-205
ION-BEAM ANALYSIS OF ELECTROPOLYMERIZED PORPHYRIN LAYERS
Authors: MAREE CHM KLEINPENNING A VREDENBERG AM HABRAKEN FHPM
Citation: Chm. Maree et al., ION-BEAM ANALYSIS OF ELECTROPOLYMERIZED PORPHYRIN LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 301-306
LUMINESCENCE QUENCHING IN ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON
Authors: SHIN JH SERNA R VANDENHOVEN GN POLMAN A VANSARK WGJHM VREDENBERG AM
Citation: Jh. Shin et al., LUMINESCENCE QUENCHING IN ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 68(7), 1996, pp. 997-999
LUMINESCENCE QUENCHING IN ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON
Authors: SHIN JH SERNA R VANDENHOVEN GN POLMAN A VANSARK WGJHM VREDENBERG AM
Citation: Jh. Shin et al., LUMINESCENCE QUENCHING IN ERBIUM-DOPED HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 68(1), 1996, pp. 46-48
TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS - RESPONSE
Authors: GOSSMANN HJ RAFFERTY CS VREDENBERG AM LUFTMAN HS UNTERWALD FC EAGLESHAM DJ JACOBSON DC BOONE T POATE JM
Citation: Hj. Gossmann et al., TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS - RESPONSE, Applied physics letters, 65(10), 1994, pp. 1322-1323
TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS
Authors: GOSSMANN HJ RAFFERTY CS VREDENBERG AM LUFTMAN HS UNTERWALD FC EAGLESHAM DJ JACOBSON DC BOONE T POATE JM
Citation: Hj. Gossmann et al., TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS, Applied physics letters, 64(3), 1994, pp. 312-314
CARBIDE AND NITRIDE CARBIDE LAYERS IN IRON SYNTHESIZED BY ION-IMPLANTATION
Authors: PEREZMARTIN AMC VREDENBERG AM DEWIT L CUSTER JS
Citation: Amc. Perezmartin et al., CARBIDE AND NITRIDE CARBIDE LAYERS IN IRON SYNTHESIZED BY ION-IMPLANTATION, Materials science & engineering. B, Solid-state materials for advanced technology, 19(3), 1993, pp. 281-284
CONTROLLED ATOMIC SPONTANEOUS EMISSION FROM ER3+ IN A TRANSPARENT SI SIO2 MICROCAVITY/
Authors: VREDENBERG AM HUNT NEJ SCHUBERT EF JACOBSON DC POATE JM ZYDZIK GJ
Citation: Am. Vredenberg et al., CONTROLLED ATOMIC SPONTANEOUS EMISSION FROM ER3+ IN A TRANSPARENT SI SIO2 MICROCAVITY/, Physical review letters, 71(4), 1993, pp. 517-530
DIFFUSION OF DOPANTS IN B-DELTA-DOPED AND SB-DELTA-DOPED SI FILMS GROWN BY SOLID-PHASE EPITAXY
Authors: GOSSMANN HJ VREDENBERG AM RAFFERTY CS LUFTMAN HS UNTERWALD FC JACOBSON DC BOONE T POATE JM
Citation: Hj. Gossmann et al., DIFFUSION OF DOPANTS IN B-DELTA-DOPED AND SB-DELTA-DOPED SI FILMS GROWN BY SOLID-PHASE EPITAXY, Journal of applied physics, 74(5), 1993, pp. 3150-3155
ENHANCED PHOTOLUMINESCENCE BY RESONANT ABSORPTION IN ER-DOPED SIO2 SIMICROCAVITIES/
Authors: SCHUBERT EF HUNT NEJ VREDENBERG AM HARRIS TD POATE JM JACOBSON DC WONG YH ZYDZIK GJ
Citation: Ef. Schubert et al., ENHANCED PHOTOLUMINESCENCE BY RESONANT ABSORPTION IN ER-DOPED SIO2 SIMICROCAVITIES/, Applied physics letters, 63(19), 1993, pp. 2603-2605
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