Authors:
INIA DK
TICHELAAR FD
ARNOLDBIK WM
VREDENBERG AM
BOERMA DO
Citation: Dk. Inia et al., NITRIDE FORMATION IN IRON AFTER NITROGEN IMPLANTATION IN A NICKEL TOPLAYER, Journal of materials research, 13(2), 1998, pp. 440-445
Authors:
ROOSENDAAL SJ
GIEBELS IAME
VREDENBERG AM
HABRAKEN FHPM
Citation: Sj. Roosendaal et al., DETERMINATION OF PHOTOELECTRON ATTENUATION LENGTHS IN THIN OXIDE-FILMS ON IRON SURFACES USING QUANTITATIVE XPS AND ELASTIC RECOIL DETECTION, Surface and interface analysis, 26(10), 1998, pp. 758-765
Citation: Pc. Gorts et al., ELLIPSOMETRY AND HIGH-ENERGY ION-SCATTERING STUDY OF THE REDUCTION OFTHIN OXIDE LAYERS ON CO(10(1)OVER-BAR-0), Surface science, 370(2-3), 1997, pp. 207-212
Authors:
GRAAT PCJ
SOMERS MAJ
VREDENBERG AM
MITTEMEIJER EJ
Citation: Pcj. Graat et al., ON THE INITIAL OXIDATION OF IRON - QUANTIFICATION OF GROWTH-KINETICS BY THE COUPLED-CURRENTS APPROACH, Journal of applied physics, 82(3), 1997, pp. 1416-1422
Authors:
INIA DK
FEINER FWJ
ARNOLDBIK WM
VREDENBERG AM
BOERMA DO
Citation: Dk. Inia et al., NITROGEN DIFFUSION AND NITRIDE FORMATION DURING AND AFTER IMPLANTATION IN NI FE BILAYERS/, Surface & coatings technology, 83(1-3), 1996, pp. 65-69
Citation: Chm. Maree et al., MECHANISM OF MEV ION-INDUCED HYDROGEN DEPLETION FROM ORGANIC LAYERS, Materials chemistry and physics, 46(2-3), 1996, pp. 198-205
Authors:
MAREE CHM
KLEINPENNING A
VREDENBERG AM
HABRAKEN FHPM
Citation: Chm. Maree et al., ION-BEAM ANALYSIS OF ELECTROPOLYMERIZED PORPHYRIN LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 301-306
Authors:
GOSSMANN HJ
RAFFERTY CS
VREDENBERG AM
LUFTMAN HS
UNTERWALD FC
EAGLESHAM DJ
JACOBSON DC
BOONE T
POATE JM
Citation: Hj. Gossmann et al., TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS - RESPONSE, Applied physics letters, 65(10), 1994, pp. 1322-1323
Authors:
GOSSMANN HJ
RAFFERTY CS
VREDENBERG AM
LUFTMAN HS
UNTERWALD FC
EAGLESHAM DJ
JACOBSON DC
BOONE T
POATE JM
Citation: Hj. Gossmann et al., TIME-DEPENDENCE OF DOPANT DIFFUSION IN DELTA-DOPED SI FILMS AND PROPERTIES OF SI POINT-DEFECTS, Applied physics letters, 64(3), 1994, pp. 312-314
Authors:
PEREZMARTIN AMC
VREDENBERG AM
DEWIT L
CUSTER JS
Citation: Amc. Perezmartin et al., CARBIDE AND NITRIDE CARBIDE LAYERS IN IRON SYNTHESIZED BY ION-IMPLANTATION, Materials science & engineering. B, Solid-state materials for advanced technology, 19(3), 1993, pp. 281-284
Authors:
VREDENBERG AM
HUNT NEJ
SCHUBERT EF
JACOBSON DC
POATE JM
ZYDZIK GJ
Citation: Am. Vredenberg et al., CONTROLLED ATOMIC SPONTANEOUS EMISSION FROM ER3+ IN A TRANSPARENT SI SIO2 MICROCAVITY/, Physical review letters, 71(4), 1993, pp. 517-530
Authors:
GOSSMANN HJ
VREDENBERG AM
RAFFERTY CS
LUFTMAN HS
UNTERWALD FC
JACOBSON DC
BOONE T
POATE JM
Citation: Hj. Gossmann et al., DIFFUSION OF DOPANTS IN B-DELTA-DOPED AND SB-DELTA-DOPED SI FILMS GROWN BY SOLID-PHASE EPITAXY, Journal of applied physics, 74(5), 1993, pp. 3150-3155