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Results: 1-11 |
Results: 11
PHENOMENON OF RESIST DEBRIS FORMATION IN ELECTRON-BEAM LITHOGRAPHY AND ITS POSSIBLE APPLICATION
Authors: DESHMUKH PR RANGRA KJ SINGH M VYAS PD PAL BB
Citation: Pr. Deshmukh et al., PHENOMENON OF RESIST DEBRIS FORMATION IN ELECTRON-BEAM LITHOGRAPHY AND ITS POSSIBLE APPLICATION, Vacuum, 47(11), 1996, pp. 1305-1311
EVIDENCE FOR THE FORMATION OF ORDERED LAYERS ON SES2 TREATED GAAS(110) USING ATOMIC-FORCE MICROSCOPY
Authors: KURUVILLA BA DATTA A SHEKHAWAT GS SHARMA AK VYAS PD GUPTA RP KULKARNI SK
Citation: Ba. Kuruvilla et al., EVIDENCE FOR THE FORMATION OF ORDERED LAYERS ON SES2 TREATED GAAS(110) USING ATOMIC-FORCE MICROSCOPY, Journal of applied physics, 80(11), 1996, pp. 6274-6278
ATOMIC-FORCE MICROSCOPY OF SELENIUM SULFIDE PASSIVATED GAAS (100) SURFACE
Authors: KURUVILLA BA DATTA A SHEKHAWAT GS SHARMA AK VYAS PD GUPTA RP KULKAMI SK
Citation: Ba. Kuruvilla et al., ATOMIC-FORCE MICROSCOPY OF SELENIUM SULFIDE PASSIVATED GAAS (100) SURFACE, Applied physics letters, 69(3), 1996, pp. 415-417
SCANNING-TUNNELING-MICROSCOPY OF SI SIO2 INTERFACE ROUGHNESS AND ITS DEPENDENCE ON GROWTH-CONDITIONS/
Authors: SHEKHAWAT GS GUPTA RP SHEKHAWAT SS RUNTHALA DP VYAS PD SRIVASTAVA P VENKATESH S MAMHOUD K GARG KB
Citation: Gs. Shekhawat et al., SCANNING-TUNNELING-MICROSCOPY OF SI SIO2 INTERFACE ROUGHNESS AND ITS DEPENDENCE ON GROWTH-CONDITIONS/, Applied physics letters, 68(1), 1996, pp. 114-116
THE EFFECT OF SPUTTER-DEPOSITION CONDITIONS ON THE GROWTH-MECHANISM OF YBA2CU3O7-DELTA THIN-FILMS STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: SHEKHAWAT GS GUPTA RP AGARWAL A GARG KB VYAS PD
Citation: Gs. Shekhawat et al., THE EFFECT OF SPUTTER-DEPOSITION CONDITIONS ON THE GROWTH-MECHANISM OF YBA2CU3O7-DELTA THIN-FILMS STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Superconductor science and technology, 8(5), 1995, pp. 291-295
PATTERN GENERATION ON SILICON SURFACES AND YBA2CU3OX THIN-FILMS BY A SCANNING TUNNELING MICROSCOPE
Authors: SHEKHAWAT GS GUPTA RP AGARWAL A GARG KB VYAS PD
Citation: Gs. Shekhawat et al., PATTERN GENERATION ON SILICON SURFACES AND YBA2CU3OX THIN-FILMS BY A SCANNING TUNNELING MICROSCOPE, Journal of applied physics, 78(1), 1995, pp. 127-131
OBSERVATION OF INTERCALATION OF EXCESS OXYGEN IN BI2SR2CACU2O8-CRYSTAL(Y SINGLE)
Authors: SHEKHAWAT GS GUPTA RP AGARWAL A VYAS PD SRIVASTAVA P SAINI NL VENKATESH S GARG KB
Citation: Gs. Shekhawat et al., OBSERVATION OF INTERCALATION OF EXCESS OXYGEN IN BI2SR2CACU2O8-CRYSTAL(Y SINGLE), Applied physics letters, 67(22), 1995, pp. 3343-3345
MANGANESE-DOPED ZINC-SULFIDE NANOPARTICLES BY AQUEOUS METHOD
Authors: KHOSRAVI AA KUNDU M KURUVILLA BA SHEKHAWAT GS GUPTA RP SHARMA AK VYAS PD KULKARNI SK
Citation: Aa. Khosravi et al., MANGANESE-DOPED ZINC-SULFIDE NANOPARTICLES BY AQUEOUS METHOD, Applied physics letters, 67(17), 1995, pp. 2506-2508
A NEW APPROACH FOR THE PREPARATION OF IN-SITU SUPERCONDUCTING BSCCO FILMS
Authors: AGARWAL A GUPTA RP KHOKLE WS KUNDRA KD DESHMUKH PR SINGH M VYAS PD
Citation: A. Agarwal et al., A NEW APPROACH FOR THE PREPARATION OF IN-SITU SUPERCONDUCTING BSCCO FILMS, Superconductor science and technology, 6(9), 1993, pp. 670-673
PROCESS AND MATERIAL PROPERTIES OF WSI2 FORMED BY DISCHARGE TREATMENT
Authors: SINGH A VYAS PD KHOKLE WS SINGH C LAL K
Citation: A. Singh et al., PROCESS AND MATERIAL PROPERTIES OF WSI2 FORMED BY DISCHARGE TREATMENT, Solid-state electronics, 36(9), 1993, pp. 1365-1367
DISCHARGE TREATMENT OF W-SI SYSTEM FOR SILICIDATION
Authors: SINGH A VYAS PD KHOKLE WS SINGH C LAL K
Citation: A. Singh et al., DISCHARGE TREATMENT OF W-SI SYSTEM FOR SILICIDATION, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1551-1553
Risultati: 1-11 |