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Results: 1-12 |
Results: 12
A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique
Authors: Mahapatra, S Rao, VR Vasi, J Cheng, B Woo, JCS
Citation: S. Mahapatra et al., A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique, SOL ST ELEC, 45(10), 2001, pp. 1717-1723
Sports rules on file on line
Authors: Vasi, J
Citation: J. Vasi, Sports rules on file on line, LIBRARY J, 125(15), 2000, pp. 125-125
Great athletes of the twentieth century
Authors: Vasi, J
Citation: J. Vasi, Great athletes of the twentieth century, LIBRARY J, 125(10), 2000, pp. 214
A novel IS-like element frequently inserted in a putative virulence regulator in bovine mastitis isolates of Streptococcus dysgalactiae
Authors: Vasi, J Lindberg, M Guss, B
Citation: J. Vasi et al., A novel IS-like element frequently inserted in a putative virulence regulator in bovine mastitis isolates of Streptococcus dysgalactiae, PLASMID, 44(3), 2000, pp. 220-230
M-like proteins of Streptococcus dysgalactiae
Authors: Vasi, J Frykberg, L Carlsson, LE Lindberg, M Guss, B
Citation: J. Vasi et al., M-like proteins of Streptococcus dysgalactiae, INFEC IMMUN, 68(1), 2000, pp. 294-302
Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFET's
Authors: Mahapatra, S Parikh, CD Rao, VR Viswanathan, CR Vasi, J
Citation: S. Mahapatra et al., Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFET's, IEEE DEVICE, 47(4), 2000, pp. 789-796
A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFET's using a novel charge pumping technique
Authors: Mahapatra, S Parikh, CD Rao, VR Viswanathan, CR Vasi, J
Citation: S. Mahapatra et al., A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFET's using a novel charge pumping technique, IEEE DEVICE, 47(1), 2000, pp. 171-177
A study of 100 nm channel length asymmetric channel MOSFET by using chargepumping
Authors: Mahapatra, S Rao, VR Parikh, CD Vasi, J Cheng, B Woo, JCS
Citation: S. Mahapatra et al., A study of 100 nm channel length asymmetric channel MOSFET by using chargepumping, MICROEL ENG, 48(1-4), 1999, pp. 193-196
Low temperature-high pressure grown thin gate dielectrics for MOS applications
Authors: Rao, VR Hansch, W Mahapatra, S Sharma, DK Vasi, J Grabolla, T Eisele, I
Citation: Vr. Rao et al., Low temperature-high pressure grown thin gate dielectrics for MOS applications, MICROEL ENG, 48(1-4), 1999, pp. 223-226
A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
Authors: Mahapatra, S Parikh, CD Vasi, J Rao, VR Viswanathan, CR
Citation: S. Mahapatra et al., A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs, SOL ST ELEC, 43(5), 1999, pp. 915-922
Five homologous repeats of the protein G-related protein MIG cooperate in binding to goat immunoglobulin G
Authors: Vasi, J Svensson, J Frick, IM Muller, HP
Citation: J. Vasi et al., Five homologous repeats of the protein G-related protein MIG cooperate in binding to goat immunoglobulin G, INFEC IMMUN, 67(1), 1999, pp. 413-416
A new "multifrequency" charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET's
Authors: Mahapatra, S Parikh, CD Vasi, J
Citation: S. Mahapatra et al., A new "multifrequency" charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET's, IEEE DEVICE, 46(5), 1999, pp. 960-967
Risultati: 1-12 |