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Results:
1-16
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Results: 16
Authors:
Disseix, P
Payen, C
Leymarie, J
Vasson, A
Mollot, F
Citation: P. Disseix et al., Thermally detected optical absorption, reflectance and photo-reflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy, OPT MATER, 17(1-2), 2001, pp. 197-200
Authors:
Siozade, L
Leymarie, J
Disseix, P
Vasson, A
Mihailovic, M
Grandjean, N
Leroux, M
Massies, J
Citation: L. Siozade et al., Modelling of absorption and emission spectra of InxGa1-xN, MAT SCI E B, 82(1-3), 2001, pp. 71-73
Authors:
Siozade, L
Disseix, P
Vasson, A
Leymarie, J
Damilano, B
Grandjean, N
Massies, J
Citation: L. Siozade et al., Absorption and emission of (In,Ga)N/GaN quantum wells grown by molecular beam epitaxy, PHYS ST S-A, 183(1), 2001, pp. 139-143
Authors:
Semond, F
Antoine-Vincent, N
Schnell, N
Malpuech, G
Leroux, M
Massies, J
Disseix, P
Leymarie, J
Vasson, A
Citation: F. Semond et al., Growth by molecular beam epitaxy and optical properties of a ten-period AlGaN/AlN distributed Bragg reflector on (111)Si, PHYS ST S-A, 183(1), 2001, pp. 163-167
Authors:
Aurand, A
Leymarie, J
Vasson, A
Mesrine, M
Massies, J
Leroux, M
Citation: A. Aurand et al., Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces byphotoluminescence under pressure, J APPL PHYS, 89(7), 2001, pp. 3775-3782
Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry
Authors:
Siozade, L
Colard, S
Mihailovic, M
Leymarie, J
Vasson, A
Grandjean, N
Leroux, M
Massies, J
Citation: L. Siozade et al., Temperature dependence of optical properties of h-GaN films studied by reflectivity and ellipsometry, JPN J A P 1, 39(1), 2000, pp. 20-25
Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures
Authors:
Siozade, L
Leymarie, J
Disseix, P
Vasson, A
Mihailovic, M
Grandjean, N
Leroux, M
Massies, J
Citation: L. Siozade et al., Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures, SOL ST COMM, 115(11), 2000, pp. 575-579
Authors:
Disseix, P
Payen, C
Leymarie, J
Vasson, A
Mollot, F
Citation: P. Disseix et al., Thermally detected optical absorption, reflectance, and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy, J APPL PHYS, 88(8), 2000, pp. 4612-4618
Authors:
Siozade, L
Colard, S
Mihailovic, M
Leymarie, J
Vasson, A
Grandjean, N
Leroux, M
Massies, J
Citation: L. Siozade et al., Temperature dependence of hexagonal-GaN optical properties below the bandgap, PHYS ST S-B, 216(1), 1999, pp. 73-77
Authors:
Goumet, E
Gil-Lafon, E
Cadoret, R
Castelluci, D
Leymarie, J
Vasson, AM
Vasson, A
Bideux, L
Gruzza, B
Citation: E. Goumet et al., Epitaxial growth of InAsxP1-x/InP quantum wells by HVPE, APPL SURF S, 142(1-4), 1999, pp. 637-641
Authors:
Malpuech, G
Kavokin, A
Leymarie, J
Disseix, P
Vasson, A
Citation: G. Malpuech et al., Optical spectroscopy study of the phase of the reflection coefficient of asingle quantum well in the exciton resonance region, PHYS REV B, 60(19), 1999, pp. 13298-13301
Authors:
Ballet, P
Disseix, P
Leymarie, J
Vasson, A
Vasson, AM
Grey, R
Citation: P. Ballet et al., Indium segregation effects in (111)B-grown (In,Ga)As/GaAs piezoelectric quantum wells, PHYS REV B, 59(8), 1999, pp. R5308-R5311
Authors:
Malpuech, G
Kavokin, A
Leymarie, J
Vasson, A
Citation: G. Malpuech et al., Indirect observation of single-exciton quantum beats in the time-resolved reflection of a single quantum well, SOL ST COMM, 113(4), 1999, pp. 185-188
Authors:
Disseix, P
Ballet, P
Monier, C
Leymarie, J
Vasson, A
Vasson, AM
Citation: P. Disseix et al., Optical properties of (In,Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates, MICROELEC J, 30(7), 1999, pp. 689-693
Authors:
Ballet, P
Disseix, P
Leymarie, J
Vasson, A
Vasson, AM
Grey, R
Citation: P. Ballet et al., The determination of e(14) in (111)B-grown (In,Ga)As/GaAs strained layers, THIN SOL FI, 336(1-2), 1998, pp. 354-357
Authors:
Aurand, A
Leymarie, J
Vasson, A
Vasson, AM
Mesrine, M
Deparis, C
Leroux, M
Citation: A. Aurand et al., Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy, THIN SOL FI, 336(1-2), 1998, pp. 358-361
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