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Results: 1-25/28
Authors:
Beaumont, B
Vennegues, P
Gibart, P
Citation: B. Beaumont et al., Epitaxial lateral overgrowth of GaN, PHYS ST S-B, 227(1), 2001, pp. 1-43
Authors:
Fernandez, S
Naranjo, FB
Calle, F
Sanchez-Garcia, MA
Calleja, E
Vennegues, P
Trampert, A
Ploog, KH
Citation: S. Fernandez et al., MBE-grown high-quality (Al, Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs, SEMIC SCI T, 16(11), 2001, pp. 913-917
Authors:
Vigue, F
Vennegues, P
Deparis, C
Vezian, S
Laugt, M
Faurie, JP
Citation: F. Vigue et al., Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire, J APPL PHYS, 90(10), 2001, pp. 5115-5119
Authors:
Feltin, E
Beaumont, B
Laugt, M
de Mierry, P
Vennegues, P
Lahreche, H
Leroux, M
Gibart, P
Citation: E. Feltin et al., Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy, APPL PHYS L, 79(20), 2001, pp. 3230-3232
Authors:
Vigue, F
Vennegues, P
Vezian, S
Laugt, M
Faurie, JP
Citation: F. Vigue et al., Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates, APPL PHYS L, 79(2), 2001, pp. 194-196
Authors:
Fernandez, S
Naranjo, FB
Calle, F
Sanchez-Garcia, MA
Calleja, E
Vennegues, P
Trampert, A
Ploog, KH
Citation: S. Fernandez et al., High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy, APPL PHYS L, 79(14), 2001, pp. 2136-2138
Authors:
Vezian, S
Massies, J
Semond, F
Grandjean, N
Vennegues, P
Citation: S. Vezian et al., In situ imaging of threading dislocation terminations at the surface of GaN(0001) epitaxially grown on Si(111), PHYS REV B, 61(11), 2000, pp. 7618-7621
Authors:
Lahreche, H
Vaille, M
Vennegues, P
Laugt, M
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Microstructural analysis of III-V nitrides grown on 6H-SiC by metal-organic vapour phase epitaxy (MOVPE), DIAM RELAT, 9(3-6), 2000, pp. 452-455
Authors:
Chauvet, C
Tournie, E
Vennegues, P
Faurie, JP
Citation: C. Chauvet et al., Molecular beam epitaxy of ZnxBe1-xSe: Influence of the substrate nature and epilayer properties, J ELEC MAT, 29(6), 2000, pp. 883-886
Authors:
Lahreche, H
Vennegues, P
Tottereau, O
Laugt, M
Lorenzini, P
Leroux, M
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111), J CRYST GR, 217(1-2), 2000, pp. 13-25
Authors:
Vennegues, P
Beaumont, B
Bousquet, V
Vaille, M
Gibart, P
Citation: P. Vennegues et al., Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods, J APPL PHYS, 87(9), 2000, pp. 4175-4181
Authors:
Vennegues, P
Benaissa, M
Beaumont, B
Feltin, E
De Mierry, P
Dalmasso, S
Leroux, M
Gibart, P
Citation: P. Vennegues et al., Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN, APPL PHYS L, 77(6), 2000, pp. 880-882
Authors:
Vennegues, P
Lahreche, H
Citation: P. Vennegues et H. Lahreche, Phase separation in metalorganic vapor-phase epitaxy AlxGa(1-x)N films deposited on 6H-SiC, APPL PHYS L, 77(26), 2000, pp. 4310-4312
Authors:
Benaissa, M
Vennegues, P
Beaumont, B
Gibart, P
Saikaly, W
Charai, A
Citation: M. Benaissa et al., Electron energy-loss spectroscopy characterization of pyramidal defects inmetalorganic vapor-phase epitaxy Mg-doped GaN thin films, APPL PHYS L, 77(14), 2000, pp. 2115-2117
Authors:
de Mierry, P
Lahreche, H
Haffouz, S
Vennegues, P
Beaumont, B
Omnes, F
Gibart, P
Citation: P. De Mierry et al., Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation., MAT SCI E B, 59(1-3), 1999, pp. 24-28
Authors:
Nataf, G
Beaumont, B
Bouille, A
Vennegues, P
Haffouz, S
Vaille, M
Gibart, P
Citation: G. Nataf et al., High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy, MAT SCI E B, 59(1-3), 1999, pp. 112-116
Authors:
Bousquet, V
Vennegues, P
Beaumont, B
Vaille, M
Gibart, P
Citation: V. Bousquet et al., TEM study of the behavior of dislocations during ELO of GaN, PHYS ST S-B, 216(1), 1999, pp. 691-695
Authors:
Lahreche, H
Vennegues, P
Vaille, M
Beaumont, B
Laugt, M
Lorenzini, P
Gibart, P
Citation: H. Lahreche et al., Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers, SEMIC SCI T, 14(11), 1999, pp. L33-L36
Authors:
Lahreche, H
Vaille, M
Beaumont, B
Laugt, M
Vennegues, P
Gibart, P
Citation: H. Lahreche et al., Metal organic vapour phase epitaxy (MOVPE) growth of GaN(n)/SiC(p) heterostructures, PHYS ST S-A, 176(1), 1999, pp. 109-112
Authors:
Beaumont, B
Bousquet, V
Vennegues, P
Vaille, M
Bouille, A
Gibart, P
Dassonneville, S
Amokrane, A
Sieber, B
Citation: B. Beaumont et al., A two-step method for epitaxial lateral overgrowth of GaN, PHYS ST S-A, 176(1), 1999, pp. 567-571
Authors:
Haffouz, S
Beaumont, B
Vennegues, P
Gibart, P
Citation: S. Haffouz et al., Optimization of Si/N treatment time of sapphire surface and its effect on the MOVPE GaN overlayers, PHYS ST S-A, 176(1), 1999, pp. 677-681
Authors:
Lahreche, H
Vennegues, P
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth, J CRYST GR, 205(3), 1999, pp. 245-252
Authors:
Vennegues, P
Grandjean, N
Massies, J
Semond, F
Citation: P. Vennegues et al., Effect of the nucleation layer deposition temperature on the nature of defects in GSMBE GaN films, J CRYST GR, 202, 1999, pp. 423-428
Authors:
Bousquet, V
Laugt, M
Vennegues, P
Tournie, E
Faurie, JP
Citation: V. Bousquet et al., Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer, J CRYST GR, 202, 1999, pp. 498-501
Authors:
Chauvet, C
Guenaud, C
Vennegues, P
Tournie, E
Faurie, JP
Citation: C. Chauvet et al., Molecular-beam epitaxy of ZnxBe1-xSe layers on vicinal Si(001) substrates, J CRYST GR, 202, 1999, pp. 514-517