AAAAAA

   
Results: 1-7 |
Results: 7

Authors: Versen, M Schmidt, KH Bock, C Reuter, D Wieck, AD Kunze, U
Citation: M. Versen et al., Single-electron tunneling through individual InAs quantum dots within a saddle point potential, PHYS ST S-B, 224(3), 2001, pp. 669-673

Authors: Heidtkamp, C Lassen, S Schneider, M Reuter, D Versen, M Wieck, AD
Citation: C. Heidtkamp et al., Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems, PHYSICA B, 284, 2000, pp. 1726-1727

Authors: Heidtkamp, C Meier, C Reuter, D Versen, M Hoch, S Diaconescu, D Wieck, AD
Citation: C. Heidtkamp et al., Tunable backscattering in quantum Hall systems induced by neighbouring gates, PHYSICA B, 284, 2000, pp. 1728-1729

Authors: Skaberna, S Versen, M Klehn, B Kunze, U Reuter, D Wieck, AD
Citation: S. Skaberna et al., Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching, ULTRAMICROS, 82(1-4), 2000, pp. 153-157

Authors: Versen, M Klehn, B Kunze, U Reuter, D Wieck, AD
Citation: M. Versen et al., Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope, ULTRAMICROS, 82(1-4), 2000, pp. 159-163

Authors: Schmidt, KH Versen, M Kunze, U Reuter, D Wieck, AD
Citation: Kh. Schmidt et al., Electron transport through a single InAs quantum dot, PHYS REV B, 62(23), 2000, pp. 15879-15887

Authors: Reuter, D Versen, M Schneider, MD Wieck, AD
Citation: D. Reuter et al., Increased mobility anisotropy in selectively doped AlxGa1-xAs/GaAs heterostructures with high electron densities, J APPL PHYS, 88(1), 2000, pp. 321-325
Risultati: 1-7 |