Authors:
Versen, M
Schmidt, KH
Bock, C
Reuter, D
Wieck, AD
Kunze, U
Citation: M. Versen et al., Single-electron tunneling through individual InAs quantum dots within a saddle point potential, PHYS ST S-B, 224(3), 2001, pp. 669-673
Authors:
Heidtkamp, C
Lassen, S
Schneider, M
Reuter, D
Versen, M
Wieck, AD
Citation: C. Heidtkamp et al., Dependence of the longitudinal resistance on edge potential and electron density in quantum Hall systems, PHYSICA B, 284, 2000, pp. 1726-1727
Authors:
Skaberna, S
Versen, M
Klehn, B
Kunze, U
Reuter, D
Wieck, AD
Citation: S. Skaberna et al., Fabrication of a quantum point contact by the dynamic plowing technique and wet-chemical etching, ULTRAMICROS, 82(1-4), 2000, pp. 153-157
Authors:
Versen, M
Klehn, B
Kunze, U
Reuter, D
Wieck, AD
Citation: M. Versen et al., Nanoscale devices fabricated by direct machining of GaAs with an atomic force microscope, ULTRAMICROS, 82(1-4), 2000, pp. 159-163
Authors:
Reuter, D
Versen, M
Schneider, MD
Wieck, AD
Citation: D. Reuter et al., Increased mobility anisotropy in selectively doped AlxGa1-xAs/GaAs heterostructures with high electron densities, J APPL PHYS, 88(1), 2000, pp. 321-325