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Results: 1-17 |
Results: 17
CVD diamond optics for ultraviolet
Authors: Pace, E Pini, A Corti, G Bogani, F Vinattieri, A Pickles, CSJ Sussmann, R
Citation: E. Pace et al., CVD diamond optics for ultraviolet, DIAM RELAT, 10(3-7), 2001, pp. 736-743
Optical characterization of IR-active composite glasses
Authors: Casalboni, M De Matteis, F Prosposito, P Pizzoferrato, R Vinattieri, A
Citation: M. Casalboni et al., Optical characterization of IR-active composite glasses, OPT MATER, 18(3), 2001, pp. 285-293
Vertical coupling effects in arrays of InAs quantum dots
Authors: Taddei, S Colocci, M Vinattieri, A Gucciardi, PG Bogani, F Franchi, S Frigeri, P Lazzarini, L Salviati, G
Citation: S. Taddei et al., Vertical coupling effects in arrays of InAs quantum dots, PHYS ST S-B, 224(2), 2001, pp. 413-417
Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots
Authors: Gucciardi, PG Vinattieri, A Colocci, M Damilano, B Grandjean, N Semond, F Massies, J
Citation: Pg. Gucciardi et al., Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots, PHYS ST S-B, 224(1), 2001, pp. 53-56
Mesoscopic-capacitor effect in GaN/AlxGa1-xN quantum wells: Effects on theelectronic states - art. no. 235305
Authors: Di Carlo, A Reale, A Lugli, P Traetta, G Lomascolo, M Passaseo, A Cingolani, R Bonfiglio, A Berti, M Napolitani, E Natali, M Sinha, SK Drigo, AV Vinattieri, A Colocci, M
Citation: A. Di Carlo et al., Mesoscopic-capacitor effect in GaN/AlxGa1-xN quantum wells: Effects on theelectronic states - art. no. 235305, PHYS REV B, 6323(23), 2001, pp. 5305
Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells
Authors: Alderighi, D Vinattieri, A Bogani, F Colocci, M Gottardo, S Grandjean, N Massies, J
Citation: D. Alderighi et al., Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells, PHYS ST S-A, 183(1), 2001, pp. 129-134
Photoluminescence properties of multiple stacked planes of GaN/AlN quantumdots studied by near-field optical microscopy
Authors: Gucciardi, PG Vinattieri, A Colocci, M Damilano, B Grandjean, N Semond, F Massies, I
Citation: Pg. Gucciardi et al., Photoluminescence properties of multiple stacked planes of GaN/AlN quantumdots studied by near-field optical microscopy, J MICROSC O, 202, 2001, pp. 212-217
Coherent emission pattern of a semiconductor microcavity
Authors: Bogani, F Gurioli, M Vinattieri, A Colocci, M Cassabois, G Roussignol, P Delalande, C
Citation: F. Bogani et al., Coherent emission pattern of a semiconductor microcavity, PHYS ST S-B, 221(1), 2000, pp. 137-141
Detection of genotypically drug-resistant HIV-1 variants and non-B subtypes in recently infected antiretroviral-naive adults in Italy
Authors: Romano, L Venturi, G Ferruzzi, R Riccio, ML Corsi, P Leoncini, F Vinattieri, A Incandela, L Valensin, PE Zazzi, M
Citation: L. Romano et al., Detection of genotypically drug-resistant HIV-1 variants and non-B subtypes in recently infected antiretroviral-naive adults in Italy, AIDS, 14(14), 2000, pp. 2204-2206
Vertical coupling and transition energies in multilayer InAs/GaAs quantum-dot structures
Authors: Taddei, S Colocci, M Vinattieri, A Bogani, F Franchi, S Frigeri, P Lazzarini, L Salviati, G
Citation: S. Taddei et al., Vertical coupling and transition energies in multilayer InAs/GaAs quantum-dot structures, PHYS REV B, 62(15), 2000, pp. 10220-10225
Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures
Authors: Sanguinetti, S Padovani, M Gurioli, M Grilli, E Guzzi, M Vinattieri, A Colocci, M Frigeri, P Franchi, S Lazzarini, L Salviati, G
Citation: S. Sanguinetti et al., Study of GaAs spacer layers in InAs/GaAs vertically aligned quantum dot structures, THIN SOL FI, 380(1-2), 2000, pp. 224-226
Free-exciton photoluminescence as a probe of CVD diamond
Authors: Bogani, F Miglio, S Sciortino, S Taschin, A Vinattieri, A
Citation: F. Bogani et al., Free-exciton photoluminescence as a probe of CVD diamond, PHYS ST S-A, 181(1), 2000, pp. 23-28
Structural and functional characterization of HPHT diamond crystals used in photoconductive devices
Authors: Pace, E Vinattieri, A Pini, A Bogani, F Santoro, M Messina, G Santangelo, S Sato, Y
Citation: E. Pace et al., Structural and functional characterization of HPHT diamond crystals used in photoconductive devices, PHYS ST S-A, 181(1), 2000, pp. 91-97
Nonlinear effects in the resonant Rayleigh scattering from quantum well structures
Authors: Gurioli, M Bogani, F Capanni, D Chiarugi, A Taccola, M Vinattieri, A Colocci, M
Citation: M. Gurioli et al., Nonlinear effects in the resonant Rayleigh scattering from quantum well structures, PHYS ST S-A, 178(1), 2000, pp. 453-457
Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots
Authors: Sanguinetti, S Padovani, M Gurioli, M Grilli, E Guzzi, M Vinattieri, A Colocci, M Frigeri, P Franchi, S
Citation: S. Sanguinetti et al., Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots, APPL PHYS L, 77(9), 2000, pp. 1307-1309
Slow spin relaxation observed in InGaN/GaN multiple quantum wells
Authors: Julier, M Vinattieri, A Colocci, M Lefebvre, P Gil, B Scalbert, D Tran, CA Karlicek, RF Lascaray, JP
Citation: M. Julier et al., Slow spin relaxation observed in InGaN/GaN multiple quantum wells, PHYS ST S-B, 216(1), 1999, pp. 341-345
Controlled tuning of the radiative lifetime in InAs self-assembled quantumdots through vertical ordering
Authors: Colocci, M Vinattieri, A Lippi, L Bogani, F Rosa-Clot, M Taddei, S Bosacchi, A Franchi, S Frigeri, P
Citation: M. Colocci et al., Controlled tuning of the radiative lifetime in InAs self-assembled quantumdots through vertical ordering, APPL PHYS L, 74(4), 1999, pp. 564-566
Risultati: 1-17 |