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Results: 1-15 |
Results: 15
Longitudinal stark effect in parabolic quantum dots
Authors: Rinaldi, R DeGiorgi, M DeVittorio, M Melcarne, A Visconti, P Cingolani, R Lipsanen, H Sopanen, M Drufva, T Tulkki, J
Citation: R. Rinaldi et al., Longitudinal stark effect in parabolic quantum dots, JPN J A P 1, 40(3B), 2001, pp. 2002-2005
Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication
Authors: Visconti, P Reshchikov, MA Jones, KM Wang, DF Cingolani, R Morkoc, H Molnar, RJ Smith, DJ
Citation: P. Visconti et al., Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication, J VAC SCI B, 19(4), 2001, pp. 1328-1333
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
Authors: Huang, D Visconti, P Jones, KM Reshchikov, MA Yun, F Baski, AA King, T Morkoc, H
Citation: D. Huang et al., Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy, APPL PHYS L, 78(26), 2001, pp. 4145-4147
Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy
Authors: Reshchikov, MA Visconti, P Morkoc, H
Citation: Ma. Reshchikov et al., Blue photoluminescence activated by surface states in GaN grown by molecular beam epitaxy, APPL PHYS L, 78(2), 2001, pp. 177-179
Investigation of inversion domains in GaN by electric-force microscopy
Authors: Jones, KM Visconti, P Yun, F Baski, AA Morkoc, H
Citation: Km. Jones et al., Investigation of inversion domains in GaN by electric-force microscopy, APPL PHYS L, 78(17), 2001, pp. 2497-2499
Characterization of free-standing hydride vapor phase epitaxy GaN
Authors: Jasinski, J Swider, W Liliental-Weber, Z Visconti, P Jones, KM Reshchikov, MA Yun, F Morkoc, H Park, SS Lee, KY
Citation: J. Jasinski et al., Characterization of free-standing hydride vapor phase epitaxy GaN, APPL PHYS L, 78(16), 2001, pp. 2297-2299
Deep centers in a free-standing GaN layer
Authors: Fang, ZQ Look, DC Visconti, P Wang, DF Lu, CZ Yun, F Morkoc, H Park, SS Lee, KY
Citation: Zq. Fang et al., Deep centers in a free-standing GaN layer, APPL PHYS L, 78(15), 2001, pp. 2178-2180
Wide band gap amorphous hydrogenated carbon films grown by plasma enhancedchemical vapor deposition
Authors: Convertino, A Visconti, P Cingolani, R
Citation: A. Convertino et al., Wide band gap amorphous hydrogenated carbon films grown by plasma enhancedchemical vapor deposition, J VAC SCI A, 18(2), 2000, pp. 356-360
Nanopatterning of organic and inorganic materials by holographic lithography and plasma etching
Authors: Visconti, P Turco, C Rinaldi, R Cingolani, R
Citation: P. Visconti et al., Nanopatterning of organic and inorganic materials by holographic lithography and plasma etching, MICROEL ENG, 53(1-4), 2000, pp. 391-394
Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy
Authors: Yun, F Reshchikov, MA Jones, K Visconti, P Morkoc, H Park, SS Lee, KY
Citation: F. Yun et al., Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxy, SOL ST ELEC, 44(12), 2000, pp. 2225-2232
Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration
Authors: Visconti, P Jones, KM Reshchikov, MA Yun, F Cingolani, R Morkoc, H Park, SS Lee, KY
Citation: P. Visconti et al., Characteristics of free-standing hydride-vapor-phase-epitaxy-grown GaN with very low defect concentration, APPL PHYS L, 77(23), 2000, pp. 3743-3745
Dislocation density in GaN determined by photoelectrochemical and hot-wet etching
Authors: Visconti, P Jones, KM Reshchikov, MA Cingolani, R Morkoc, H Molnar, RJ
Citation: P. Visconti et al., Dislocation density in GaN determined by photoelectrochemical and hot-wet etching, APPL PHYS L, 77(22), 2000, pp. 3532-3534
Optical processes and electronic states in InGaAs/GaAs V-groove quantum wire lasers
Authors: Cingolani, R Rinaldi, R DeVittorio, M Passaseo, A DeGiorgi, M Visconti, P Turco, C
Citation: R. Cingolani et al., Optical processes and electronic states in InGaAs/GaAs V-groove quantum wire lasers, SPECT ACT A, 55(10), 1999, pp. 1923-1929
Recombination in InGaAs/GaAs quantum wire lasers
Authors: DeVittorio, M Rinaldi, R Passaseo, A DeGiorgi, M Lomascolo, M Visconti, P Cingolani, R Taurino, A Catalano, M DeCaro, L Tapfer, L
Citation: M. Devittorio et al., Recombination in InGaAs/GaAs quantum wire lasers, SOL ST COMM, 112(1), 1999, pp. 55-60
Holographic nanopatterning of the organic semiconductor poly(p-phenylene vinylene)
Authors: Gigli, G Rinaldi, R Turco, C Visconti, P Cingolani, R Cacialli, F
Citation: G. Gigli et al., Holographic nanopatterning of the organic semiconductor poly(p-phenylene vinylene), APPL PHYS L, 73(26), 1998, pp. 3926-3928
Risultati: 1-15 |