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Results: 1-9 |
Results: 9
Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry
Authors: Kokkoris, M Kossionides, S Vlastou, R Aslanoglou, XA Grotzschel, R Nsouli, B Kuznetsov, A Petrovic, S Paradellis, T
Citation: M. Kokkoris et al., Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry, NUCL INST B, 184(3), 2001, pp. 319-326
Determination of the stopping power of channeled protons in SiO2 in the backscattering geometry
Authors: Kokkoris, M Vlastou, R Aslanoglou, XA Kossionides, E Grotzschel, R Paradellis, T
Citation: M. Kokkoris et al., Determination of the stopping power of channeled protons in SiO2 in the backscattering geometry, NUCL INST B, 173(4), 2001, pp. 411-416
Fusion cross-section of the Li-7+B-11 reaction
Authors: Vlastou, R Papadopoulos, CT Tsabaris, C Assimakopoulos, PA Pakou, AA Doukellis, G Kalfas, CA Xenoulis, AC
Citation: R. Vlastou et al., Fusion cross-section of the Li-7+B-11 reaction, EUR PHY J A, 8(3), 2000, pp. 361-371
Fusion cross section limitation of the Li-7+B-11 reaction
Authors: Tsabaris, C Papadopoulos, CT Vlastou, R Pakou, AA Assimakopoulos, PA Adamides, E Kalfas, CA Xenoulis, AC
Citation: C. Tsabaris et al., Fusion cross section limitation of the Li-7+B-11 reaction, PHYS SCR, T88, 2000, pp. 131-134
Determination of sulphur and copper depth distribution in patina layers using nuclear reaction techniques
Authors: Kalliabakos, G Kossionides, S Misailides, P Papadopoulos, CT Vlastou, R
Citation: G. Kalliabakos et al., Determination of sulphur and copper depth distribution in patina layers using nuclear reaction techniques, NUCL INST B, 170(3-4), 2000, pp. 467-473
Simulations and comparisons of channeling spectra in the p+Si-28 system inthe backscattering geometry
Authors: Aslanoglou, XA Karydas, A Kokkoris, M Kossionides, E Paradellis, T Souliotis, G Vlastou, R
Citation: Xa. Aslanoglou et al., Simulations and comparisons of channeling spectra in the p+Si-28 system inthe backscattering geometry, NUCL INST B, 161, 2000, pp. 524-527
Characterization of optical UV filters using Rutherford backscattering spectroscopy
Authors: Vlastou, R Fokitis, E Maltezos, S Kalliabakos, G Kokkoris, M Kossionides, E
Citation: R. Vlastou et al., Characterization of optical UV filters using Rutherford backscattering spectroscopy, NUCL INST B, 161, 2000, pp. 590-594
Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal-oxide-semiconductor devices
Authors: Evangelou, EK Konofaos, N Aslanoglou, XA Dimitriadis, CA Patsalas, P Logothetidis, S Kokkoris, M Kossionides, E Vlastou, R Groetschel, R
Citation: Ek. Evangelou et al., Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal-oxide-semiconductor devices, J APPL PHYS, 88(12), 2000, pp. 7192-7196
Heavy-ion induced damage of crystalline Ge and W in the 0.5-8 A MeV range
Authors: Huber, H Assmann, W Karamian, SA Mieskes, HD Nolte, H Gazis, E Kokkoris, M Kossionides, S Vlastou, R Grotzschel, R Mucklich, A Prusseit, W
Citation: H. Huber et al., Heavy-ion induced damage of crystalline Ge and W in the 0.5-8 A MeV range, NUCL INST B, 146(1-4), 1998, pp. 309-316
Risultati: 1-9 |