Authors:
Segal, AS
Vorob'ev, AN
Karpov, SY
Mokhov, EN
Ramm, MG
Ramm, MS
Roenkov, AD
Vodakov, YA
Makarov, YN
Citation: As. Segal et al., Growth of silicon carbide by sublimation sandwich method in the atmosphereof inert gas, J CRYST GR, 208(1-4), 2000, pp. 431-441
Citation: Ya. Vodakov et En. Mokhov, Progress in the growth and research of crystals for wide-gap semiconducting materials, PHYS SOL ST, 41(5), 1999, pp. 742-745