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Results:
1-7
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Results: 7
Authors:
Voronina, TI
Lagunova, TS
Kunitsyna, EV
Parkhomenko, YA
Vasyukov, DA
Yakovlev, YP
Citation: Ti. Voronina et al., The role of lead in growing Ga1-xInxAsySb1-y solid solutions by liquid-phase epitaxy, SEMICONDUCT, 35(8), 2001, pp. 904-911
Authors:
Voronina, TI
Zhurtanov, BE
Lagunova, TS
Mikhailova, MP
Moiseev, KD
Rozov, AE
Yakovlev, YP
Citation: Ti. Voronina et al., Type II heterojunctions in an InGaAsSb/GaSb system: Magnetotransport properties, SEMICONDUCT, 35(3), 2001, pp. 331-337
Authors:
Voronina, TI
Lagunova, TS
Mikhailova, MP
Moiseev, KD
Rozov, AE
Yakovlev, YP
Citation: Ti. Voronina et al., Magnetotransport in a semimetal channel in p-Ga1-xInxAsySb1-y/p-InAs heterostructures with various compositions of the solid solution, SEMICONDUCT, 34(2), 2000, pp. 189-194
Authors:
Voronina, TI
Lagunova, TS
Moiseev, KD
Rozov, AE
Sipovskaya, MA
Stepanov, MV
Sherstnev, VV
Yakovlev, YP
Citation: Ti. Voronina et al., Electrical properties of epitaxial indium arsenide and narrow band solid solutions based on it, SEMICONDUCT, 33(7), 1999, pp. 719-725
Authors:
Zhurtanov, BE
Moiseev, KD
Mikhailova, MP
Voronina, TI
Stoyanov, ND
Yakovlev, YP
Citation: Be. Zhurtanov et al., Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure, SEMICONDUCT, 33(3), 1999, pp. 355-358
Authors:
Voronina, TI
Zotova, NV
Kizhayev, SS
Molchanov, SS
Yakovlev, YP
Citation: Ti. Voronina et al., Luminescence properties of InAs layers and p-n structures grown by metallorganic chemical vapor deposition, SEMICONDUCT, 33(10), 1999, pp. 1062-1066
Authors:
Moiseev, KD
Mikhailova, MP
Zhurtanov, BI
Voronina, TI
Andreychuk, OV
Stoyanov, ND
Yakovlev, YP
Citation: Kd. Moiseev et al., Electroluminescence and lasing in type II Ga(Al)Sb/InGaAsSb heterostructures in the spectral range 3-5 mu m, APPL SURF S, 142(1-4), 1999, pp. 257-261
Risultati:
1-7
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