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Results:
1-14
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Results: 14
Authors:
Peterson, IR
Vuillaume, D
Metzger, RM
Citation: Ir. Peterson et al., Analytical model for molecular-scale charge transport, J PHYS CH A, 105(19), 2001, pp. 4702-4707
Authors:
Krzeminski, C
Delerue, C
Allan, G
Vuillaume, D
Metzger, RM
Citation: C. Krzeminski et al., Theory of electrical rectification in a molecular monolayer - art. no. 085405, PHYS REV B, 6408(8), 2001, pp. 5405
Authors:
Pic, N
Glachant, A
Nitsche, S
Hoarau, JY
Goguenheim, D
Vuillaume, D
Sibai, A
Chaneliere, C
Citation: N. Pic et al., Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx, SOL ST ELEC, 45(8), 2001, pp. 1265-1270
Authors:
Pic, N
Glachant, A
Nitsche, S
Hoarau, JY
Goguenheim, D
Vuillaume, D
Sibai, A
Autran, JL
Citation: N. Pic et al., Determination of the electrical properties of 2.5 nm thick silicon-based dielectric films: thermally grown SiOx, J NON-CRYST, 280(1-3), 2001, pp. 69-77
Authors:
Kar, S
Miramond, C
Vuillaume, D
Citation: S. Kar et al., Properties of electronic traps at silicon/1-octadecene interfaces, APPL PHYS L, 78(9), 2001, pp. 1288-1290
Authors:
Pic, N
Glachant, A
Nitsche, S
Hoarau, JY
Goguenheim, D
Vuillaume, D
Sibai, A
Chaneliere, C
Citation: N. Pic et al., Determination of the electrical properties of thermally grown ultrathin nitride films, MICROEL REL, 40(4-5), 2000, pp. 589-592
Authors:
Collet, J
Tharaud, O
Chapoton, A
Vuillaume, D
Citation: J. Collet et al., Low-voltage, 30 nm channel length, organic transistors with a self-assembled monolayer as gate insulating films, APPL PHYS L, 76(14), 2000, pp. 1941-1943
Authors:
Collet, J
Lenfant, S
Vuillaume, D
Bouloussa, O
Rondelez, F
Gay, JM
Kham, K
Chevrot, C
Citation: J. Collet et al., High anisotropic conductivity in organic insulator/semiconductor monolayerheterostructure, APPL PHYS L, 76(10), 2000, pp. 1339-1341
Authors:
Vuillaume, D
Chen, B
Metzger, RM
Citation: D. Vuillaume et al., Electron transfer through a monolayer of hexadecylquinolinium tricyanoquinodimethanide, LANGMUIR, 15(11), 1999, pp. 4011-4017
Authors:
Goguenheim, D
Bravaix, A
Vuillaume, D
Mondon, F
Candelier, P
Jourdain, M
Meinertzhagen, A
Citation: D. Goguenheim et al., Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides, MICROEL REL, 39(2), 1999, pp. 165-169
Authors:
El-Hdiy, A
Ziane, D
Nebel, F
Vuillaume, D
Jourdain, M
Citation: A. El-hdiy et al., Dependence of interface-state generation on field polarity in metal-oxide-silicon devices of various thicknesses and technologies, J PHYS D, 32(13), 1999, pp. 1435-1442
Authors:
Goguenheim, A
Bravaix, A
Vuillaume, D
Mondon, F
Jourdain, M
Meinertzhagen, A
Citation: A. Goguenheim et al., Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections, J NON-CRYST, 245, 1999, pp. 41-47
Authors:
Vuillaume, D
Citation: D. Vuillaume, Hot carrier injections in SiO2 and related instabilities in submicrometer MOSFETs, INSTABILITIES IN SILICON DEVICES, VOL 3, 1999, pp. 265-339
Authors:
Vuillaume, D
Boulas, C
Collet, J
Allan, G
Delerue, C
Citation: D. Vuillaume et al., Electronic structure of a heterostructure of an alkylsiloxane self-assembled monolayer on silicon, PHYS REV B, 58(24), 1998, pp. 16491-16498
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