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Results: 1-17 |
Results: 17
Fokker-Planck equation for lattice deposition models - art. no. 045103
Authors: Baggio, C Vardavas, R Vvedensky, DD
Citation: C. Baggio et al., Fokker-Planck equation for lattice deposition models - art. no. 045103, PHYS REV E, 6404(4), 2001, pp. 5103
Epitaxial phenomena across length and time scales
Authors: Vvedensky, DD
Citation: Dd. Vvedensky, Epitaxial phenomena across length and time scales, SURF INT AN, 31(7), 2001, pp. 627-636
Fluctuations and scaling in aggregation phenomena
Authors: Ratsch, C Gyure, MF Chen, S Kang, M Vvedensky, DD
Citation: C. Ratsch et al., Fluctuations and scaling in aggregation phenomena, PHYS REV B, 61(16), 2000, pp. 10598-10601
Surface structural phase transitions on icosahedral Al-Pd-Mn
Authors: Bolliger, B Erbudak, M Hensch, A Vvedensky, DD
Citation: B. Bolliger et al., Surface structural phase transitions on icosahedral Al-Pd-Mn, MAT SCI E A, 294, 2000, pp. 859-862
Monte Carlo simulation of GaAs(001) homoepitaxy
Authors: Itoh, M Bell, GR Joyce, BA Vvedensky, DD
Citation: M. Itoh et al., Monte Carlo simulation of GaAs(001) homoepitaxy, PROG T PH S, (138), 2000, pp. 90-95
Scaling functions for island-size distributions
Authors: Vvedensky, DD
Citation: Dd. Vvedensky, Scaling functions for island-size distributions, PHYS REV B, 62(23), 2000, pp. 15435-15438
Transformation kinetics of homoepitaxial islands on GaAs(001)
Authors: Itoh, M Bell, GR Joyce, BA Vvedensky, DD
Citation: M. Itoh et al., Transformation kinetics of homoepitaxial islands on GaAs(001), SURF SCI, 464(2-3), 2000, pp. 200-210
Nucleation and growth mechanisms during MBE of III-V compounds
Authors: Joyce, BA Vvedensky, DD Bell, GR Belk, JG Itoh, M Jones, TS
Citation: Ba. Joyce et al., Nucleation and growth mechanisms during MBE of III-V compounds, MAT SCI E B, 67(1-2), 1999, pp. 7-16
Island dynamics and the level set method for epitaxial growth
Authors: Caflisch, RE Gyure, MF Merriman, B Osher, SJ Ratsch, C Vvedensky, DD Zinck, JJ
Citation: Re. Caflisch et al., Island dynamics and the level set method for epitaxial growth, APPL MATH L, 12(4), 1999, pp. 13-22
Surface structural transitions on Al3Pd
Authors: Bolliger, B Erbudak, M Vvedensky, DD Kortan, AR
Citation: B. Bolliger et al., Surface structural transitions on Al3Pd, PHYS REV B, 59(11), 1999, pp. 7346-7349
Islands and defects on the growing InAs(001)-(2 x 4) surface
Authors: Bell, GR Itoh, M Jones, TS Joyce, BA Vvedensky, DD
Citation: Gr. Bell et al., Islands and defects on the growing InAs(001)-(2 x 4) surface, SURF SCI, 435, 1999, pp. 455-459
Decagonal epilayers on the icosahedral quasicrystal Al70Pd20Mn10
Authors: Bolliger, B Erbudak, M Vvedensky, DD Kortan, AR
Citation: B. Bolliger et al., Decagonal epilayers on the icosahedral quasicrystal Al70Pd20Mn10, PHYS REV L, 82(4), 1999, pp. 763-766
Island nucleation and growth during homoepitaxy on GaAs(001)-(2 x 4)
Authors: Vvedensky, DD Itoh, M Bell, GR Jones, TS Joyce, BA
Citation: Dd. Vvedensky et al., Island nucleation and growth during homoepitaxy on GaAs(001)-(2 x 4), J CRYST GR, 202, 1999, pp. 56-61
In situ studies of III-V semiconductor film growth by molecular beam epitaxy
Authors: Joyce, BA Vvedensky, DD Jones, TS Itoh, M Bell, GR Belk, JG
Citation: Ba. Joyce et al., In situ studies of III-V semiconductor film growth by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 106-112
Planar and cluster structure of icosahedral quasicrystals
Authors: Bolliger, B Erbudak, M Vvedensky, DD Kortan, AR
Citation: B. Bolliger et al., Planar and cluster structure of icosahedral quasicrystals, CZEC J PHYS, 49(11), 1999, pp. 1531-1536
Level-set methods for the simulation of epitaxial phenomena
Authors: Gyure, MF Ratsch, C Merriman, B Caflisch, RE Osher, S Zinck, JJ Vvedensky, DD
Citation: Mf. Gyure et al., Level-set methods for the simulation of epitaxial phenomena, PHYS REV E, 58(6), 1998, pp. R6927-R6930
Activated Si-H exchange at Si-island edges on Si(001)
Authors: Smilauer, P Mizushima, K Vvedensky, DD
Citation: P. Smilauer et al., Activated Si-H exchange at Si-island edges on Si(001), PHYS REV L, 81(25), 1998, pp. 5600-5603
Risultati: 1-17 |