Authors: KRUGER B ARMBRECHT T FRIESE T TIEROCK B WAGEMANN HG

Citation: B. Kruger et al., THE SHOCKLEY-HAYNES EXPERIMENT APPLIED TO MOS STRUCTURES, Solid-state electronics, 39(6), 1996, pp. 891-896

Authors: KRUGER B FRIESE T ELRATEL F SHARABATI W WAGEMANN HG

Citation: B. Kruger et al., MINORITY-CARRIER BEHAVIOR IN SILICON - MEASUREMENT RESULTS DERIVED FROM THE SHOCKLEY-HAYNES EXPERIMENT, Solid-state electronics, 39(6), 1996, pp. 897-900

Authors: BUCHER K BRUNS J WAGEMANN HG

Citation: K. Bucher et al., ABSORPTION-COEFFICIENT OF SILICON - AN ASSESSMENT OF MEASUREMENTS ANDTHE SIMULATION OF TEMPERATURE-VARIATION, Journal of applied physics, 75(2), 1994, pp. 1127-1132

Authors: BRUNS J SEIFERT W WAWER P WINNICKE H BRAUNIG D WAGEMANN HG

Citation: J. Bruns et al., IMPROVED EFFICIENCY OF CRYSTALLINE SILICON SOLAR-CELLS DUE TO HE+ IMPLANTATION, Applied physics letters, 64(20), 1994, pp. 2700-2702

Authors: RINGHANDT A WAGEMANN HG

Citation: A. Ringhandt et Hg. Wagemann, AN EXACT CALCULATION OF THE 2-DIMENSIONAL CAPACITANCE OF A WIRE AND ANEW APPROXIMATION FORMULA, I.E.E.E. transactions on electron devices, 40(5), 1993, pp. 1028-1032

Authors: WILDAU HJ BERNT H FRIEDRICH D SEIFERT W STAUDTFISCHBACH P WAGEMANN HG WINDBRACKE W

Citation: Hj. Wildau et al., THE INVERSION LAYER OF SUBHALF-MICROMETER N-CHANNEL AND P-CHANNEL MOSFETS IN THE TEMPERATURE-RANGE 208-403-K, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2318-2325