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Results: 1-13 |
Results: 13
BORON IMPLANTATION AND EPITAXIAL REGROWTH STUDIES OF 6H SIC
Authors: NORDELL N SCHONER A ROTTNER K PERSSON POA WAHAB Q HULTMAN L LINNARSSON MK OLSSON E
Citation: N. Nordell et al., BORON IMPLANTATION AND EPITAXIAL REGROWTH STUDIES OF 6H SIC, Journal of electronic materials, 27(7), 1998, pp. 833-837
STUDY OF AVALANCHE BREAKDOWN AND IMPACT IONIZATION IN 4H SILICON-CARBIDE
Authors: KONSTANTINOV AO WAHAB Q NORDELL N LINDEFELT U
Citation: Ao. Konstantinov et al., STUDY OF AVALANCHE BREAKDOWN AND IMPACT IONIZATION IN 4H SILICON-CARBIDE, Journal of electronic materials, 27(4), 1998, pp. 335-341
TEMPERATURE-DEPENDENCE OF AVALANCHE BREAKDOWN FOR EPITAXIAL DIODES IN4H SILICON-CARBIDE
Authors: KONSTANTINOV AO NORDELL N WAHAB Q LINDEFELT U
Citation: Ao. Konstantinov et al., TEMPERATURE-DEPENDENCE OF AVALANCHE BREAKDOWN FOR EPITAXIAL DIODES IN4H SILICON-CARBIDE, Applied physics letters, 73(13), 1998, pp. 1850-1852
A 3 KV SCHOTTKY-BARRIER DIODE IN 4H-SIC
Authors: WAHAB Q KIMOTO T ELLISON A HALLIN C TUOMINEN M YAKIMOVA R HENRY A BERGMAN JP JANZEN E
Citation: Q. Wahab et al., A 3 KV SCHOTTKY-BARRIER DIODE IN 4H-SIC, Applied physics letters, 72(4), 1998, pp. 445-447
INTERFACIAL VOID FORMATION DURING VAPOR-PHASE GROWTH OF 3C-SIC ON SI(001) AND SI(111) SUBSTRATES - CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY
Authors: BJORKETUN LO HULTMAN L IVANOV IP WAHAB Q SUNDGREN JE
Citation: Lo. Bjorketun et al., INTERFACIAL VOID FORMATION DURING VAPOR-PHASE GROWTH OF 3C-SIC ON SI(001) AND SI(111) SUBSTRATES - CHARACTERIZATION BY TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 182(3-4), 1997, pp. 379-388
IONIZATION RATES AND CRITICAL FIELDS IN 4H SILICON-CARBIDE
Authors: KONSTANTINOV AO WAHAB Q NORDELL N LINDEFELT U
Citation: Ao. Konstantinov et al., IONIZATION RATES AND CRITICAL FIELDS IN 4H SILICON-CARBIDE, Applied physics letters, 71(1), 1997, pp. 90-92
HETEROJUNCTION DIODES IN 3C-SIC SI SYSTEM GROWN BY REACTIVE MAGNETRONSPUTTERING - EFFECTS OF GROWTH TEMPERATURE ON DIODE RECTIFICATION ANDBREAKDOWN/
Authors: WAHAB Q KARLSTEEN M NUR O HULTMAN L WILLANDER M SUNDGREN JE
Citation: Q. Wahab et al., HETEROJUNCTION DIODES IN 3C-SIC SI SYSTEM GROWN BY REACTIVE MAGNETRONSPUTTERING - EFFECTS OF GROWTH TEMPERATURE ON DIODE RECTIFICATION ANDBREAKDOWN/, Journal of electronic materials, 25(9), 1996, pp. 1495-1500
FABRICATION AND CHARACTERIZATION OF MOS DEVICES ON 3C-SIC FILMS GROWNBY REACTIVE MAGNETRON SPUTTERING ON SI(111) SUBSTRATES
Authors: WAHAB Q TURAN R HULTMAN L WILLANDER M SUNDGREN JE
Citation: Q. Wahab et al., FABRICATION AND CHARACTERIZATION OF MOS DEVICES ON 3C-SIC FILMS GROWNBY REACTIVE MAGNETRON SPUTTERING ON SI(111) SUBSTRATES, Thin solid films, 287(1-2), 1996, pp. 252-257
3C-SIC SI/3C-SIC EPITAXIAL TRILAYER FILMS DEPOSITED ON SI(111) SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING/
Authors: WAHAB Q HULTMAN L IVANOV IP WILLANDER M SUNDGREN JE
Citation: Q. Wahab et al., 3C-SIC SI/3C-SIC EPITAXIAL TRILAYER FILMS DEPOSITED ON SI(111) SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING/, Journal of materials research, 10(6), 1995, pp. 1349-1351
STRUCTURAL CHARACTERIZATION OF OXIDE LAYERS THERMALLY GROWN ON 3C-SICFILMS
Authors: WAHAB Q HULTMAN L WILLANDER M SUNDGREN JE
Citation: Q. Wahab et al., STRUCTURAL CHARACTERIZATION OF OXIDE LAYERS THERMALLY GROWN ON 3C-SICFILMS, Journal of electronic materials, 24(10), 1995, pp. 1345-1348
GROWTH AND CHARACTERIZATION OF 3C-SIC FILMS ON SI SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING - EFFECTS OF CH4 PARTIAL-PRESSURE ON THE CRYSTALLINE QUALITY, STRUCTURE AND STOICHIOMETRY
Authors: WAHAB Q HULTMAN L IVANOV IP WILLANDER M SUNDGREN JE
Citation: Q. Wahab et al., GROWTH AND CHARACTERIZATION OF 3C-SIC FILMS ON SI SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING - EFFECTS OF CH4 PARTIAL-PRESSURE ON THE CRYSTALLINE QUALITY, STRUCTURE AND STOICHIOMETRY, Thin solid films, 261(1-2), 1995, pp. 317-321
GROWTH OF HIGH-QUALITY 3C-SIC EPITAXIAL-FILMS ON OFF-AXIS SI(001) SUBSTRATES AT 850-DEGREES-C BY REACTIVE MAGNETRON SPUTTERING
Authors: WAHAB Q SARDELA MR HULTMAN L HENRY A WILLANDER M JANZEN E SUNDGREN JE
Citation: Q. Wahab et al., GROWTH OF HIGH-QUALITY 3C-SIC EPITAXIAL-FILMS ON OFF-AXIS SI(001) SUBSTRATES AT 850-DEGREES-C BY REACTIVE MAGNETRON SPUTTERING, Applied physics letters, 65(6), 1994, pp. 725-727
GROWTH OF EPITAXIAL 3C-SIC FILMS ON (111) SILICON SUBSTRATES AT 850-DEGREES-C BY REACTIVE MAGNETRON SPUTTERING
Authors: WAHAB Q GLASS RC IVANOV IP BIRCH J SUNDGREN JE WILLANDER M
Citation: Q. Wahab et al., GROWTH OF EPITAXIAL 3C-SIC FILMS ON (111) SILICON SUBSTRATES AT 850-DEGREES-C BY REACTIVE MAGNETRON SPUTTERING, Journal of applied physics, 74(3), 1993, pp. 1663-1669
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