Citation: Y. Wang et al., CALCULATIONS OF THE GROUND-STATE ENERGY FOR STRONG-COUPLING AND INTERMEDIATE-COUPLING EXCITON-PHONON SYSTEMS, Physical review. B, Condensed matter, 54(3), 1996, pp. 1463-1466
Citation: Km. Deng et al., MAGNETIC-PROPERTIES OF M(13) CLUSTERS (M=Y, ZR, NB, MO, AND TC), Physical review. B, Condensed matter, 54(17), 1996, pp. 11907-11910
Citation: Kl. Wang, SIMPLIFIED ANALYSIS OF HORIZONTAL STRESSES IN A BUTTRESSED FORE-ARC SLIVER AT AN OBLIQUE SUBDUCTION ZONE, Geophysical research letters, 23(16), 1996, pp. 2021-2024
Citation: Kl. Wang et Pn. Ross, XPS AND UPS CHARACTERIZATION OF THE REACTIONS OF AL(111) WITH TETRAHYDROFURAN AND PROPYLENE CARBONATE, Surface science, 365(3), 1996, pp. 753-768
Citation: Tw. Kim et al., MAGNETOTRANSPORT AND ELECTRONIC SUBBAND STUDIES IN SIXGE1-X SI STRAINED SINGLE QUANTUM-WELLS/, Solid state communications, 99(1), 1996, pp. 47-51
Authors:
NAYAK DK
WOO JCS
PARK JS
WANG KL
MACWILLIAMS KP
Citation: Dk. Nayak et al., HOLE CONFINEMENT IN A SI GESI/SI QUANTUM-WELL ON SIMOX/, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 180-182
Citation: Kl. Wang et al., THE REACTION OF CLEAN LI SURFACES WITH SMALL MOLECULES IN ULTRAHIGH-VACUUM .1. DIOXYGEN, Journal of the Electrochemical Society, 143(2), 1996, pp. 422-428
Citation: Fy. Huang et Kl. Wang, NORMAL-INCIDENCE EPITAXIAL SIGEC PHOTODETECTOR NEAR 1.3 MU-M WAVELENGTH GROWN ON SI SUBSTRATE, Applied physics letters, 69(16), 1996, pp. 2330-2332
Citation: Kl. Wang et al., SIGE BAND ENGINEERING FOR MOS, CMOS AND QUANTUM EFFECT DEVICES, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 311-324
Citation: Jl. Yang et al., SITE OCCUPATION AND ELECTRONIC-STRUCTURE OF AN INTERSTITIAL MN2+ IMPURITY IN GAP, Journal of physics. Condensed matter, 7(17), 1995, pp. 3271-3278
Citation: Fy. Huang et Kl. Wang, STRAIN TRANSFER BETWEEN THIN-FILMS ON BURIED OXIDE AND ITS APPLICATION IN HETEROEPITAXIAL CRYSTAL-GROWTH, Philosophical magazine letters, 72(4), 1995, pp. 231-237
Citation: G. Karunasiri et al., DOPING DEPENDENCE OF INTERSUBBAND TRANSITIONS IN SI1-XGEX SI MULTIPLE-QUANTUM WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 463-466
Authors:
ZHUANG GR
WANG KL
CHOTTINER G
BARBOUR R
LUO YY
BAE IT
TRYK D
SCHERSON DA
Citation: Gr. Zhuang et al., NOVEL IN-SITU AND EX-SITU TECHNIQUES FOR THE STUDY OF LITHIUM ELECTROLYTE INTERFACES, Journal of power sources, 54(1), 1995, pp. 20-27
Authors:
KANG TW
PARK WJ
CHUNG CK
PARK JS
WANG KL
KIM TW
Citation: Tw. Kang et al., INTERFACE-RELATED DEFECTS IN A GE0.4SI0.6 SI SINGLE-QUANTUM-WELL/, Semiconductor science and technology, 10(2), 1995, pp. 179-182
Citation: Yd. Woo et al., REDUCTION OF THE DISLOCATION DENSITY FOR GAAS THIN-FILMS ON SI SUBSTRATES GROWN BY MOLECULAR-BEAM EPITAXY USING THE 2-STEP GROWTH METHOD, Journal of materials science letters, 14(19), 1995, pp. 1340-1343