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Results:
1-7
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Results: 7
Authors:
KRAMER KJ
TALWAR S
MCCARTHY AM
WEINER KH
Citation: Kj. Kramer et al., CHARACTERIZATION OF REVERSE LEAKAGE COMPONENTS FOR ULTRASHALLOW P(+) N DIODES FABRICATED USING GAS IMMERSION LASER DOPING/, IEEE electron device letters, 17(10), 1996, pp. 461-463
Authors:
KRAMER KJ
TALWAR S
LEWIS IT
DAVISON JE
WILLIAMS KA
BENTON KA
WEINER KH
Citation: Kj. Kramer et al., RESISTLESS, AREA-SELECTIVE ULTRASHALLOW P+ N JUNCTION FABRICATION USING PROJECTION GAS IMMERSION LASER DOPING/, Applied physics letters, 68(17), 1996, pp. 2320-2322
Authors:
ISHIDA E
SIGMON TW
WEINER KH
FROST MR
Citation: E. Ishida et al., ULTRA-SHALLOW BOX-LIKE PROFILES FABRICATED BY PULSED ULTRAVIOLET-LASER DOPING PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 399-404
Authors:
WEINER KH
Citation: Kh. Weiner, EXCIMER-LASER DOPING FOR ULTRASHALLOW JUNCTIONS, Solid state technology, 37(6), 1994, pp. 30
Authors:
KRAMER KJ
TALWAR S
SIGMON TW
WEINER KH
Citation: Kj. Kramer et al., HETEROEPITAXIAL SI SI1-XGEX SI STRUCTURES PRODUCED USING PULSED UV-LASER PROCESSING, Applied physics letters, 65(13), 1994, pp. 1709-1711
Authors:
KRAMER KJ
TALWAR S
ISHIDA E
WEINER KH
SIGMON TW
Citation: Kj. Kramer et al., FABRICATION AND CHARACTERIZATION OF SELECTIVELY GROWN SI1-XGEX SI P+/N HETEROJUNCTIONS USING PULSED-LASER INDUCED EPITAXY AND GAS IMMERSIONLASER DOPING/, Applied surface science, 69(1-4), 1993, pp. 121-126
Authors:
WEINER KH
CAREY PG
MCCARTHY AM
SIGMON TW
Citation: Kh. Weiner et al., AN EXCIMER-LASER-BASED NANOSECOND THERMAL-DIFFUSION TECHNIQUE FOR ULTRA-SHALLOW PN JUNCTION FABRICATION, Microelectronic engineering, 20(1-2), 1993, pp. 107-130
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