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Results: 1-25 | 26-26
Results: 1-25/26
SELECTIVE SIO2 SI3N4 ETCHING IN MAGNETIZED INDUCTIVELY-COUPLED C4F8 PLASMA/
Authors: LEE HJ KIM JK KIM JH WHANG KW KIM JH JOO JH
Citation: Hj. Lee et al., SELECTIVE SIO2 SI3N4 ETCHING IN MAGNETIZED INDUCTIVELY-COUPLED C4F8 PLASMA/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 500-506
GROWTH OF SIGE SI MULTIPLE-QUANTUM WELLS BY ULTRA-HIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION/
Authors: JOO SJ YOON E HWANG SH WHANG KW CHUN SK KIM YD
Citation: Sj. Joo et al., GROWTH OF SIGE SI MULTIPLE-QUANTUM WELLS BY ULTRA-HIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION/, Thin solid films, 321, 1998, pp. 111-115
EFFECTS OF THE AXIAL EXTERNAL MAGNETIC-FIELD ON THE REDUCTION OF THE DIELECTRIC WINDOW DAMAGE DUE TO CAPACITIVE COUPLING IN THE INDUCTIVELY-COUPLED PLASMA
Authors: KIM JH LEE HJ KIM YT WHANG KW JOO JH
Citation: Jh. Kim et al., EFFECTS OF THE AXIAL EXTERNAL MAGNETIC-FIELD ON THE REDUCTION OF THE DIELECTRIC WINDOW DAMAGE DUE TO CAPACITIVE COUPLING IN THE INDUCTIVELY-COUPLED PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 564-567
PHYSICAL DAMAGE AND CONTAMINATION BY MAGNETIZED INDUCTIVELY-COUPLED PLASMAS AND EFFECTS OF VARIOUS CLEANING AND ANNEALING METHODS
Authors: NAM WJ YEOM GY KIM JH WHANG KW YOON JK
Citation: Wj. Nam et al., PHYSICAL DAMAGE AND CONTAMINATION BY MAGNETIZED INDUCTIVELY-COUPLED PLASMAS AND EFFECTS OF VARIOUS CLEANING AND ANNEALING METHODS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 590-595
EFFECTS OF BIAS FREQUENCY ON REACTIVE ION ETCHING LAG IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING SYSTEM
Authors: DOH HH YEON CK WHANG KW
Citation: Hh. Doh et al., EFFECTS OF BIAS FREQUENCY ON REACTIVE ION ETCHING LAG IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING SYSTEM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 664-667
STUDY OF PARTICULATE FORMATION AND ITS CONTROL BY A RADIO-FREQUENCY POWER MODULATION IN THE REACTIVE ION ETCHING PROCESS OF SIO2 WITH CF4 H-2 PLASMA/
Authors: YEON CK WHANG KW
Citation: Ck. Yeon et Kw. Whang, STUDY OF PARTICULATE FORMATION AND ITS CONTROL BY A RADIO-FREQUENCY POWER MODULATION IN THE REACTIVE ION ETCHING PROCESS OF SIO2 WITH CF4 H-2 PLASMA/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(1), 1997, pp. 66-71
OBSERVATION OF E-2 PEAK SPLITTING OF SI-GE SHORT-PERIOD SUPERLATTICE
Authors: KIM YD HWANG SH WHANG KW YOON E KLEIN MV BARIBEAU JM
Citation: Yd. Kim et al., OBSERVATION OF E-2 PEAK SPLITTING OF SI-GE SHORT-PERIOD SUPERLATTICE, Journal of the Korean Physical Society, 30, 1997, pp. 284-287
THE DIFFERENT PATTERNS OF HEAT-SHOCK PROTEIN EXPRESSION IN HUMAN EPIDERMAL-CELLS VS DERMAL CELLS AFTER UV-RADIATION
Authors: WHANG KW LEE JY HWANG JY PARK JH NORRIS D
Citation: Kw. Whang et al., THE DIFFERENT PATTERNS OF HEAT-SHOCK PROTEIN EXPRESSION IN HUMAN EPIDERMAL-CELLS VS DERMAL CELLS AFTER UV-RADIATION, Journal of investigative dermatology, 108(4), 1997, pp. 390-390
SPECTROSCOPIC ELLIPSOMETRY STUDY ON E-2 PEAK SPLITTING OF SI-GE SHORT-PERIOD SUPERLATTICES
Authors: KIM YD KLEIN MV BARIBEAU JM HWANG SH WHANG KW YOON E
Citation: Yd. Kim et al., SPECTROSCOPIC ELLIPSOMETRY STUDY ON E-2 PEAK SPLITTING OF SI-GE SHORT-PERIOD SUPERLATTICES, Journal of applied physics, 81(12), 1997, pp. 7952-7955
AMORPHOUS (100) PLATELET FORMATION IN (100)SI INDUCED BY HYDROGEN PLASMA TREATMENT
Authors: HWANG KH PARK JW YOON E WHANG KW LEE JY
Citation: Kh. Hwang et al., AMORPHOUS (100) PLATELET FORMATION IN (100)SI INDUCED BY HYDROGEN PLASMA TREATMENT, Journal of applied physics, 81(1), 1997, pp. 74-77
MECHANISM OF SURFACE-ROUGHNESS IN HYDROGEN PLASMA-CLEANED (100)SILICON AT LOW-TEMPERATURES
Authors: HWANG KH YOON EJ WHANG KW LEE JY
Citation: Kh. Hwang et al., MECHANISM OF SURFACE-ROUGHNESS IN HYDROGEN PLASMA-CLEANED (100)SILICON AT LOW-TEMPERATURES, Journal of the Electrochemical Society, 144(1), 1997, pp. 335-339
THE EFFECTS OF MAGNETIC-FIELDS ON A PLANAR INDUCTIVELY-COUPLED ARGON PLASMA
Authors: LEE HJ YANG ID WHANG KW
Citation: Hj. Lee et al., THE EFFECTS OF MAGNETIC-FIELDS ON A PLANAR INDUCTIVELY-COUPLED ARGON PLASMA, Plasma sources science & technology, 5(3), 1996, pp. 383-388
MECHANISM OF SELECTIVE SIO2 SI ETCHING WITH FLUOROCARBON GASES (CF4, C4F8) AND HYDROGEN MIXTURE IN ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING SYSTEM/
Authors: DOH HH KIM JH LEE SH WHANG KW
Citation: Hh. Doh et al., MECHANISM OF SELECTIVE SIO2 SI ETCHING WITH FLUOROCARBON GASES (CF4, C4F8) AND HYDROGEN MIXTURE IN ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING SYSTEM/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(5), 1996, pp. 2827-2834
EFFECTS OF MAGNETIC-FIELD ON OXIDE ETCHING CHARACTERISTICS IN PLANAR TYPE RADIO-FREQUENCY INDUCTIVELY-COUPLED PLASMA
Authors: LEE HJ KIM JH WHANG KW JOO JH
Citation: Hj. Lee et al., EFFECTS OF MAGNETIC-FIELD ON OXIDE ETCHING CHARACTERISTICS IN PLANAR TYPE RADIO-FREQUENCY INDUCTIVELY-COUPLED PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1007-1010
NONCONTACT MINORITY-CARRIER LIFETIME MEASUREMENT OF SI AND SIGE EPILAYERS PREPARED BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION
Authors: HWANG SH EO YP SEO JH WHANG KW YOON E TAE HS
Citation: Sh. Hwang et al., NONCONTACT MINORITY-CARRIER LIFETIME MEASUREMENT OF SI AND SIGE EPILAYERS PREPARED BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1033-1036
STUDY OF RADIATION-DAMAGE AND CONTAMINATION BY MAGNETIZED INDUCTIVELY-COUPLED PLASMA-ETCHING
Authors: KIM HS NAM WJ YEOM GY LEE HJ KIM JH WHANG KW
Citation: Hs. Kim et al., STUDY OF RADIATION-DAMAGE AND CONTAMINATION BY MAGNETIZED INDUCTIVELY-COUPLED PLASMA-ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1062-1066
IN-SITU BORON DOPING OF SI AND SI1-XGEX EPITAXIAL LAYERS BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION
Authors: PARK JW HWANG KH JOO SJ YOON E HWANG SH WHANG KW
Citation: Jw. Park et al., IN-SITU BORON DOPING OF SI AND SI1-XGEX EPITAXIAL LAYERS BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1072-1075
EFFECT OF HYDROGEN ADDITION TO FLUOROCARBON GASES (CF4, C4F8) IN SELECTIVE SIO2 SI ETCHING BY ELECTRON-CYCLOTRON-RESONANCE PLASMA/
Authors: DOH HH KIM JH WHANG KW LEE SH
Citation: Hh. Doh et al., EFFECT OF HYDROGEN ADDITION TO FLUOROCARBON GASES (CF4, C4F8) IN SELECTIVE SIO2 SI ETCHING BY ELECTRON-CYCLOTRON-RESONANCE PLASMA/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1088-1091
LOW-TEMPERATURE IN-SITU CLEANING OF SILICON(100) SURFACE BY ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA
Authors: TAE HS PARK SJ HWANG SH HWANG KH YOON E WHANG KW SONG SA
Citation: Hs. Tae et al., LOW-TEMPERATURE IN-SITU CLEANING OF SILICON(100) SURFACE BY ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 908-913
GENERATION AND BEHAVIOR OF PARTICULATES IN A RADIO-FREQUENCY EXCITED CH4 PLASMA
Authors: YEON CK WHANG KW
Citation: Ck. Yeon et Kw. Whang, GENERATION AND BEHAVIOR OF PARTICULATES IN A RADIO-FREQUENCY EXCITED CH4 PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 2044-2050
DYNAMICS OF PARTICULATES IN THE AFTERGLOW OF A RADIO-FREQUENCY EXCITED PLASMA
Authors: YEON CK KIM JH WHANG KW
Citation: Ck. Yeon et al., DYNAMICS OF PARTICULATES IN THE AFTERGLOW OF A RADIO-FREQUENCY EXCITED PLASMA, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 927-930
NUMERICAL-ANALYSIS OF THE MICRODISCHARGE IN A DC PLASMA DISPLAY PANELBY 2-DIMENSIONAL MULTIFLUID EQUATIONS
Authors: CHOI KC WHANG KW
Citation: Kc. Choi et Kw. Whang, NUMERICAL-ANALYSIS OF THE MICRODISCHARGE IN A DC PLASMA DISPLAY PANELBY 2-DIMENSIONAL MULTIFLUID EQUATIONS, IEEE transactions on plasma science, 23(3), 1995, pp. 399-404
EFFECTS OF PROCESS PARAMETERS ON LOW-TEMPERATURE SILICON HOMOEPITAXY BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION
Authors: TAE HS HWANG SH PARK SJ YOON E WHANG KW
Citation: Hs. Tae et al., EFFECTS OF PROCESS PARAMETERS ON LOW-TEMPERATURE SILICON HOMOEPITAXY BY ULTRAHIGH-VACUUM ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 78(6), 1995, pp. 4112-4117
SURFACE-ROUGHNESS AND DEFECT MORPHOLOGY IN ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA CLEANED (100)SILICON AT LOW-TEMPERATURES
Authors: HWANG KH YOON E WHANG KW LEE JY
Citation: Kh. Hwang et al., SURFACE-ROUGHNESS AND DEFECT MORPHOLOGY IN ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA CLEANED (100)SILICON AT LOW-TEMPERATURES, Applied physics letters, 67(24), 1995, pp. 3590-3592
DAMAGE AND CONTAMINATION IN LOW-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING
Authors: WHANG KW LEE SH DOH HH KIM JS
Citation: Kw. Whang et al., DAMAGE AND CONTAMINATION IN LOW-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3091-3094
Risultati: 1-25 | 26-26