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Results: 1-20 |
Results: 20
THE DEPENDENCE OF THE STRUCTURE AND ELECTRONIC-PROPERTIES OF WURTZITEGAN SURFACES ON THE METHOD OF PREPARATION
Authors: BERMUDEZ VM KOLESKE DD WICKENDEN AE
Citation: Vm. Bermudez et al., THE DEPENDENCE OF THE STRUCTURE AND ELECTRONIC-PROPERTIES OF WURTZITEGAN SURFACES ON THE METHOD OF PREPARATION, Applied surface science, 126(1-2), 1998, pp. 69-82
STUDY OF GAN FILMS BY PULSED-LASER PHOTOELECTRON-SPECTROSCOPY
Authors: LOPRESTI JL WEBB SC WILLIAMS RT KIM W MORKOC H WICKENDEN AE KOLESKE DD
Citation: Jl. Lopresti et al., STUDY OF GAN FILMS BY PULSED-LASER PHOTOELECTRON-SPECTROSCOPY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 733-736
OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF EPITAXIAL GAN
Authors: GLASER ER KENNEDY TA CARLOS WE FREITAS JA WICKENDEN AE KOLESKE DD
Citation: Er. Glaser et al., OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF EPITAXIAL GAN, Physical review. B, Condensed matter, 57(15), 1998, pp. 8957-8965
GROWTH-MODEL FOR GAN WITH COMPARISON TO STRUCTURAL, OPTICAL, AND ELECTRICAL-PROPERTIES
Authors: KOLESKE DD WICKENDEN AE HENRY RL DESISTO WJ GORMAN RJ
Citation: Dd. Koleske et al., GROWTH-MODEL FOR GAN WITH COMPARISON TO STRUCTURAL, OPTICAL, AND ELECTRICAL-PROPERTIES, Journal of applied physics, 84(4), 1998, pp. 1998-2010
KINETIC-STUDY OF THE OXIDATION OF GALLIUM NITRIDE IN DRY AIR
Authors: WOLTER SD MOHNEY SE VENUGOPALAN H WICKENDEN AE KOLESKE DD
Citation: Sd. Wolter et al., KINETIC-STUDY OF THE OXIDATION OF GALLIUM NITRIDE IN DRY AIR, Journal of the Electrochemical Society, 145(2), 1998, pp. 629-632
ENHANCEMENT OF ELECTRICAL AND STRUCTURAL-PROPERTIES OF GAN LAYERS GROWN ON VICINAL-CUT, A-PLANE SAPPHIRE SUBSTRATES
Authors: FATEMI M WICKENDEN AE KOLESKE DD TWIGG ME FREITAS JA HENRY RL GORMAN RJ
Citation: M. Fatemi et al., ENHANCEMENT OF ELECTRICAL AND STRUCTURAL-PROPERTIES OF GAN LAYERS GROWN ON VICINAL-CUT, A-PLANE SAPPHIRE SUBSTRATES, Applied physics letters, 73(5), 1998, pp. 608-610
ENHANCED GAN DECOMPOSITION IN H-2 NEAR ATMOSPHERIC PRESSURES
Authors: KOLESKE DD WICKENDEN AE HENRY RL TWIGG ME CULBERTSON JC GORMAN RJ
Citation: Dd. Koleske et al., ENHANCED GAN DECOMPOSITION IN H-2 NEAR ATMOSPHERIC PRESSURES, Applied physics letters, 73(14), 1998, pp. 2018-2020
REPEATABILITY OF SI CONCENTRATION MEASUREMENTS IN SI-DOPED GAN FILMS
Authors: CHI PH SIMONS DS WICKENDEN AE KOLESKE DD
Citation: Ph. Chi et al., REPEATABILITY OF SI CONCENTRATION MEASUREMENTS IN SI-DOPED GAN FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2565-2568
ION-IMPLANTATION DOPING OF OMCVD GROWN GAN
Authors: EDWARDS A RAO MV MOLNAR B WICKENDEN AE HOLLAND OW CHI PH
Citation: A. Edwards et al., ION-IMPLANTATION DOPING OF OMCVD GROWN GAN, Journal of electronic materials, 26(3), 1997, pp. 334-339
GAN FETS FOR MICROWAVE AND HIGH-TEMPERATURE APPLICATIONS
Authors: BINARI SC DOVERSPIKE K KELNER G DIETRICH HB WICKENDEN AE
Citation: Sc. Binari et al., GAN FETS FOR MICROWAVE AND HIGH-TEMPERATURE APPLICATIONS, Solid-state electronics, 41(2), 1997, pp. 177-180
FABRICATION AND CHARACTERIZATION OF GAN FETS
Authors: BINARI SC KRUPPA W DIETRICH HB KELNER G WICKENDEN AE FREITAS JA
Citation: Sc. Binari et al., FABRICATION AND CHARACTERIZATION OF GAN FETS, Solid-state electronics, 41(10), 1997, pp. 1549-1554
THE INFLUENCE OF STRAIN AND MOSAIC STRUCTURE ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN FILMS ON SAPPHIRE SUBSTRATES
Authors: WICKENDEN AE ALEXANDER WB KOLESKE DD FREITAS JA
Citation: Ae. Wickenden et al., THE INFLUENCE OF STRAIN AND MOSAIC STRUCTURE ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN FILMS ON SAPPHIRE SUBSTRATES, Journal of crystal growth, 170(1-4), 1997, pp. 367-371
SURFACE-COMPOSITION AND STRUCTURE OF GAN EPILAYERS ON SAPPHIRE
Authors: AHN J SUNG MM RABALAIS JW KOLESKE DD WICKENDEN AE
Citation: J. Ahn et al., SURFACE-COMPOSITION AND STRUCTURE OF GAN EPILAYERS ON SAPPHIRE, The Journal of chemical physics, 107(22), 1997, pp. 9577-9584
PERSISTENT PHOTOCONDUCTIVITY IN N-TYPE GAN
Authors: BEADIE G RABINOVICH WS WICKENDEN AE KOLESKE DD BINARI SC FREITAS JA
Citation: G. Beadie et al., PERSISTENT PHOTOCONDUCTIVITY IN N-TYPE GAN, Applied physics letters, 71(8), 1997, pp. 1092-1094
COMPOSITION AND STRUCTURE OF THE GAN(0001)-(1X1) SURFACE
Authors: SUNG MM AHN J BYKOV V RABALAIS JW KOLESKE DD WICKENDEN AE
Citation: Mm. Sung et al., COMPOSITION AND STRUCTURE OF THE GAN(0001)-(1X1) SURFACE, Physical review. B, Condensed matter, 54(20), 1996, pp. 14652-14663
THE GROWTH AND PROPERTIES OF AL AND ALN FILMS ON GAN(0001)-(1X1)
Authors: BERMUDEZ VM JUNG TM DOVERSPIKE K WICKENDEN AE
Citation: Vm. Bermudez et al., THE GROWTH AND PROPERTIES OF AL AND ALN FILMS ON GAN(0001)-(1X1), Journal of applied physics, 79(1), 1996, pp. 110-119
THE EFFECT OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH CONDITIONS ON WURTZITE GAN ELECTRON-TRANSPORT PROPERTIES
Authors: GASKILL DK WICKENDEN AE DOVERSPIKE K TADAYON B ROWLAND LB
Citation: Dk. Gaskill et al., THE EFFECT OF ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH CONDITIONS ON WURTZITE GAN ELECTRON-TRANSPORT PROPERTIES, Journal of electronic materials, 24(11), 1995, pp. 1525-1530
DOPING OF GALLIUM NITRIDE USING DISILANE
Authors: WICKENDEN AE ROWLAND LB DOVERSPIKE K GASKILL DK
Citation: Ae. Wickenden et al., DOPING OF GALLIUM NITRIDE USING DISILANE, Journal of electronic materials, 24(11), 1995, pp. 1547-1550
MODULATED REFLECTANCE AND ADSORPTION CHARACTERIZATION OF SINGLE-CRYSTAL GAN FILMS
Authors: GIORDANA A GASKILL DK WICKENDEN DK WICKENDEN AE
Citation: A. Giordana et al., MODULATED REFLECTANCE AND ADSORPTION CHARACTERIZATION OF SINGLE-CRYSTAL GAN FILMS, Journal of electronic materials, 23(6), 1994, pp. 509-512
THE EFFECT OF THERMAL ANNEALING ON GAN NUCLEATION LAYERS DEPOSITED ON(0001) SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: WICKENDEN AE WICKENDEN DK KISTENMACHER TJ
Citation: Ae. Wickenden et al., THE EFFECT OF THERMAL ANNEALING ON GAN NUCLEATION LAYERS DEPOSITED ON(0001) SAPPHIRE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 75(10), 1994, pp. 5367-5371
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