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Results: 1-13 |
Results: 13
GATE CURRENT AND OXIDE RELIABILITY IN P(-SI AND POLY-GE0.3SI0.7 GATE MATERIAL() POLY MOS CAPACITORS WITH POLY)
Authors: SALM C KLOOTWIJK JH PONOMAREV Y BOOS PWH GRAVESTEIJN DJ WOERLEE PH
Citation: C. Salm et al., GATE CURRENT AND OXIDE RELIABILITY IN P(-SI AND POLY-GE0.3SI0.7 GATE MATERIAL() POLY MOS CAPACITORS WITH POLY), IEEE electron device letters, 19(7), 1998, pp. 213-215
RTP ANNEALINGS FOR HIGH-QUALITY LPCVD INTERPOLYSILICON DIELECTRIC LAYERS
Authors: KLOOTWIJK JH VANKRANENBURG H WEUSTHOF MHH WOERLEE PH WALLINGA H
Citation: Jh. Klootwijk et al., RTP ANNEALINGS FOR HIGH-QUALITY LPCVD INTERPOLYSILICON DIELECTRIC LAYERS, Microelectronics and reliability, 38(2), 1998, pp. 277-280
INFLUENCE OF OVERPOLISH TIME ON THE PERFORMANCE OF W DAMASCENE TECHNOLOGY
Authors: VANKRANENBURG H WOERLEE PH
Citation: H. Vankranenburg et Ph. Woerlee, INFLUENCE OF OVERPOLISH TIME ON THE PERFORMANCE OF W DAMASCENE TECHNOLOGY, Journal of the Electrochemical Society, 145(4), 1998, pp. 1285-1291
W-CMP FOR SUBMICRON INVERSE METALLIZATION
Authors: VANKRANENBURG H VANCORBACH HD WOERLEE PH LOHMEIER M
Citation: H. Vankranenburg et al., W-CMP FOR SUBMICRON INVERSE METALLIZATION, Microelectronic engineering, 33(1-4), 1997, pp. 241-248
DIFFUSION AND ELECTRICAL-PROPERTIES OF BORON AND ARSENIC DOPED POLY-SI AND POLY-GEXSI1-X (X-SIMILAR-TO-0.3) AS GATE MATERIAL FOR SUB-0.25 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR APPLICATIONS
Authors: SALM C VANVEEN DT GRAVESTEIJN DJ HOLLEMAN J WOERLEE PH
Citation: C. Salm et al., DIFFUSION AND ELECTRICAL-PROPERTIES OF BORON AND ARSENIC DOPED POLY-SI AND POLY-GEXSI1-X (X-SIMILAR-TO-0.3) AS GATE MATERIAL FOR SUB-0.25 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR APPLICATIONS, Journal of the Electrochemical Society, 144(10), 1997, pp. 3665-3673
IMPROVEMENTS OF DEPOSITED INTERPOLYSILICON DIELECTRIC CHARACTERISTICSWITH RTP N2O-ANNEAL
Authors: KLOOTWIJK JH WEUSTHOF MHH VANKRANENBURG H WOERLEE PH WALLINGA H
Citation: Jh. Klootwijk et al., IMPROVEMENTS OF DEPOSITED INTERPOLYSILICON DIELECTRIC CHARACTERISTICSWITH RTP N2O-ANNEAL, IEEE electron device letters, 17(7), 1996, pp. 358-359
LPCVD SIO2 LAYERS PREPARED FROM SIH4 AND O-2 AT 450-DEGREES-C IN A RAPID THERMAL-PROCESSING REACTOR
Authors: COBIANU C REM JB KLOOTWIJK JH WEUSTHOF MHH HOLLEMAN J WOERLEE PH
Citation: C. Cobianu et al., LPCVD SIO2 LAYERS PREPARED FROM SIH4 AND O-2 AT 450-DEGREES-C IN A RAPID THERMAL-PROCESSING REACTOR, Journal de physique. IV, 5(C5), 1995, pp. 1005-1011
LIFETIME CALCULATIONS OF MOSFETS USING DEPTH-DEPENDENT NONLOCAL IMPACT IONIZATION
Authors: VANDORT MJ SLOTBOOM JW STREUTKER G WOERLEE PH
Citation: Mj. Vandort et al., LIFETIME CALCULATIONS OF MOSFETS USING DEPTH-DEPENDENT NONLOCAL IMPACT IONIZATION, Microelectronics, 26(2-3), 1995, pp. 301-305
3 HOT-CARRIER DEGRADATION MECHANISMS IN DEEP-SUBMICRON PMOSFETS
Authors: WOLTJER R PAULZEN GM POMP HG LIFKA H WOERLEE PH
Citation: R. Woltjer et al., 3 HOT-CARRIER DEGRADATION MECHANISMS IN DEEP-SUBMICRON PMOSFETS, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 109-115
A SIMPLE-MODEL FOR QUANTIZATION EFFECTS IN HEAVILY-DOPED SILICON MOSFETS AT INVERSION CONDITIONS
Authors: VANDORT MJ WOERLEE PH WALKER AJ
Citation: Mj. Vandort et al., A SIMPLE-MODEL FOR QUANTIZATION EFFECTS IN HEAVILY-DOPED SILICON MOSFETS AT INVERSION CONDITIONS, Solid-state electronics, 37(3), 1994, pp. 411-414
NEW TECHNIQUE FOR MEASURING 2-DIMENSIONAL OXIDATION-ENHANCED DIFFUSION IN SILICON AT LOW-TEMPERATURES
Authors: VANDORT MJ LIFKA H ZALM PC DEBOER WB WOERLEE PH SLOTBOOM JW COWERN NEB
Citation: Mj. Vandort et al., NEW TECHNIQUE FOR MEASURING 2-DIMENSIONAL OXIDATION-ENHANCED DIFFUSION IN SILICON AT LOW-TEMPERATURES, Applied physics letters, 64(16), 1994, pp. 2130-2132
LIGHTLY NITRIDED GATE OXIDES FOR 0.25 MU-M CMOS
Authors: POMP HG KUIPER AET LIFKA H MONTREE AH WOERLEE PH
Citation: Hg. Pomp et al., LIGHTLY NITRIDED GATE OXIDES FOR 0.25 MU-M CMOS, Microelectronic engineering, 22(1-4), 1993, pp. 85-88
SHALLOW BORON JUNCTIONS AND PREAMORPHIZATION FOR DEEP SUBMICRON SILICON TECHNOLOGY
Authors: WALKER AJ WOERLEE PH POMP HG COWERN NEB
Citation: Aj. Walker et al., SHALLOW BORON JUNCTIONS AND PREAMORPHIZATION FOR DEEP SUBMICRON SILICON TECHNOLOGY, Journal of applied physics, 73(8), 1993, pp. 4048-4053
Risultati: 1-13 |