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Results: 1-25 | 26-30
Results: 1-25/30
REAL-TIME SPECTROSCOPIC ELLIPSOMETRY FOR CHARACTERIZATION AND OPTIMIZATION OF AMORPHOUS SILICON-BASED SOLAR-CELL STRUCTURES
Authors: KOH J FUJIWARA H LU YW WRONSKI CR
Citation: J. Koh et al., REAL-TIME SPECTROSCOPIC ELLIPSOMETRY FOR CHARACTERIZATION AND OPTIMIZATION OF AMORPHOUS SILICON-BASED SOLAR-CELL STRUCTURES, Thin solid films, 313, 1998, pp. 469-473
MICROSTRUCTURAL EVOLUTION OF A-SI-H PREPARED USING HYDROGEN DILUTION OF SILANE STUDIED BY REAL-TIME SPECTROELLIPSOMETRY
Authors: KOH J FUJIWARA H COLLINS RW LEE YH WRONSKI CR
Citation: J. Koh et al., MICROSTRUCTURAL EVOLUTION OF A-SI-H PREPARED USING HYDROGEN DILUTION OF SILANE STUDIED BY REAL-TIME SPECTROELLIPSOMETRY, Journal of non-crystalline solids, 230, 1998, pp. 73-77
PARAMETERIZATION OF THE OPTICAL FUNCTIONS OF A-SI1-XCX-H - APPLICATIONS TO C-DEPTH-PROFILING AND SURFACE-TEMPERATURE MONITORING IN SOLAR-CELL PREPARATION
Authors: FUJIWARA H KOH J WRONSKI CR COLLINS RW BURNHAM JS
Citation: H. Fujiwara et al., PARAMETERIZATION OF THE OPTICAL FUNCTIONS OF A-SI1-XCX-H - APPLICATIONS TO C-DEPTH-PROFILING AND SURFACE-TEMPERATURE MONITORING IN SOLAR-CELL PREPARATION, Journal of non-crystalline solids, 230, 1998, pp. 460-464
REAL-TIME SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF STRUCTURAL AND THERMAL EQUILIBRATION OF AMORPHOUS SILICON-CARBON ALLOY P LAYERS INP-I-N SOLAR-CELL FABRICATION
Authors: FUJIWARA H KOH J LEE Y WRONSKI CR COLLINS RW
Citation: H. Fujiwara et al., REAL-TIME SPECTROSCOPIC ELLIPSOMETRY CHARACTERIZATION OF STRUCTURAL AND THERMAL EQUILIBRATION OF AMORPHOUS SILICON-CARBON ALLOY P LAYERS INP-I-N SOLAR-CELL FABRICATION, Journal of applied physics, 84(4), 1998, pp. 2278-2286
OPTIMIZATION OF HYDROGENATED AMORPHOUS-SILICON P-I-N SOLAR-CELLS WITH2-STEP I-LAYERS GUIDED BY REAL-TIME SPECTROSCOPIC ELLIPSOMETRY
Authors: KOH JH LEE YH FUJIWARA H WRONSKI CR COLLINS RW
Citation: Jh. Koh et al., OPTIMIZATION OF HYDROGENATED AMORPHOUS-SILICON P-I-N SOLAR-CELLS WITH2-STEP I-LAYERS GUIDED BY REAL-TIME SPECTROSCOPIC ELLIPSOMETRY, Applied physics letters, 73(11), 1998, pp. 1526-1528
AN IMPROVED ANALYSIS FOR BAND-EDGE OPTICAL-ABSORPTION SPECTRA IN HYDROGENATED AMORPHOUS-SILICON FROM OPTICAL AND PHOTOCONDUCTIVITY MEASUREMENTS
Authors: JIAO L CHEN I COLLINS RW WRONSKI CR HATA N
Citation: L. Jiao et al., AN IMPROVED ANALYSIS FOR BAND-EDGE OPTICAL-ABSORPTION SPECTRA IN HYDROGENATED AMORPHOUS-SILICON FROM OPTICAL AND PHOTOCONDUCTIVITY MEASUREMENTS, Applied physics letters, 72(9), 1998, pp. 1057-1059
OPTICAL DEPTH PROFILING OF BAND-GAP ENGINEERED INTERFACES IN AMORPHOUS-SILICON SOLAR-CELLS AT MONOLAYER RESOLUTION
Authors: FUJIWARA H KOH J WRONSKI CR COLLINS RW BURNHAM JS
Citation: H. Fujiwara et al., OPTICAL DEPTH PROFILING OF BAND-GAP ENGINEERED INTERFACES IN AMORPHOUS-SILICON SOLAR-CELLS AT MONOLAYER RESOLUTION, Applied physics letters, 72(23), 1998, pp. 2993-2995
APPLICATION OF REAL-TIME SPECTROSCOPIC ELLIPSOMETRY FOR CHARACTERIZING THE STRUCTURE AND OPTICAL-PROPERTIES OF MICROCRYSTALLINE COMPONENT LAYERS OF AMORPHOUS-SEMICONDUCTOR SOLAR-CELLS
Authors: KOH J FUJIWARA H WRONSKI CR COLLINS RW
Citation: J. Koh et al., APPLICATION OF REAL-TIME SPECTROSCOPIC ELLIPSOMETRY FOR CHARACTERIZING THE STRUCTURE AND OPTICAL-PROPERTIES OF MICROCRYSTALLINE COMPONENT LAYERS OF AMORPHOUS-SEMICONDUCTOR SOLAR-CELLS, Solar energy materials and solar cells, 49(1-4), 1997, pp. 135-142
LIGHT-INDUCED-CHANGES IN HYDROGEN-DILUTED A-SI-H MATERIALS AND SOLAR-CELLS - A NEW PERSPECTIVE ON SELF-CONSISTENT ANALYSIS
Authors: LEE Y JIAO L LIU H LU Z COLLINS RW WRONSKI CR
Citation: Y. Lee et al., LIGHT-INDUCED-CHANGES IN HYDROGEN-DILUTED A-SI-H MATERIALS AND SOLAR-CELLS - A NEW PERSPECTIVE ON SELF-CONSISTENT ANALYSIS, Solar energy materials and solar cells, 49(1-4), 1997, pp. 149-156
DIFFERENCES IN THE DENSITIES OF CHARGED DEFECT STATES AND KINETICS OFSTAEBLER-WRONSKI EFFECT IN UNDOPED (NONINTRINSIC) HYDROGENATED AMORPHOUS-SILICON THIN-FILMS
Authors: GUNES M WRONSKI CR
Citation: M. Gunes et Cr. Wronski, DIFFERENCES IN THE DENSITIES OF CHARGED DEFECT STATES AND KINETICS OFSTAEBLER-WRONSKI EFFECT IN UNDOPED (NONINTRINSIC) HYDROGENATED AMORPHOUS-SILICON THIN-FILMS, Journal of applied physics, 81(8), 1997, pp. 3526-3536
APPLICATION OF REAL-TIME SPECTROSCOPIC ELLIPSOMETRY FOR HIGH-RESOLUTION DEPTH PROFILING OF COMPOSITIONALLY GRADED AMORPHOUS-SILICON ALLOY THIN-FILMS
Authors: FUJIWARA H KOH J WRONSKI CR COLLINS RW
Citation: H. Fujiwara et al., APPLICATION OF REAL-TIME SPECTROSCOPIC ELLIPSOMETRY FOR HIGH-RESOLUTION DEPTH PROFILING OF COMPOSITIONALLY GRADED AMORPHOUS-SILICON ALLOY THIN-FILMS, Applied physics letters, 70(16), 1997, pp. 2150-2152
A COMPARISON OF THE HYDROGENATED AMORPHOUS SI SCHOTTKY-BARRIER AND THE HYDROGENATED AMORPHOUS SI P-I-N DARK FORWARD-BIAS CURRENT DENSITY-VOLTAGE CHARACTERISTICS
Authors: RUBINELLI FA LIU H WRONSKI CR
Citation: Fa. Rubinelli et al., A COMPARISON OF THE HYDROGENATED AMORPHOUS SI SCHOTTKY-BARRIER AND THE HYDROGENATED AMORPHOUS SI P-I-N DARK FORWARD-BIAS CURRENT DENSITY-VOLTAGE CHARACTERISTICS, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 74(4), 1996, pp. 407-426
AMORPHOUS-SILICON TECHNOLOGY - COMING OF AGE
Authors: WRONSKI CR
Citation: Cr. Wronski, AMORPHOUS-SILICON TECHNOLOGY - COMING OF AGE, Solar energy materials and solar cells, 41-2, 1996, pp. 427-439
INSIGHTS INTO DEPOSITION PROCESSES FOR AMORPHOUS-SEMICONDUCTOR MATERIALS AND DEVICES FROM REAL-TIME SPECTROSCOPIC ELLIPSOMETRY
Authors: COLLINS RW BURNHAM JS KIM S KOH JY LU YW WRONSKI CR
Citation: Rw. Collins et al., INSIGHTS INTO DEPOSITION PROCESSES FOR AMORPHOUS-SEMICONDUCTOR MATERIALS AND DEVICES FROM REAL-TIME SPECTROSCOPIC ELLIPSOMETRY, Journal of non-crystalline solids, 200, 1996, pp. 981-986
DISTRIBUTION OF CHARGED DEFECTS IN A-SI-H N-I SCHOTTKY-BARRIER SOLAR-CELLS
Authors: LIU HY JIAO L SEMOUSHKINA S WRONSKI CR
Citation: Hy. Liu et al., DISTRIBUTION OF CHARGED DEFECTS IN A-SI-H N-I SCHOTTKY-BARRIER SOLAR-CELLS, Journal of non-crystalline solids, 200, 1996, pp. 1168-1171
A NOVEL-APPROACH TO THE ANALYSIS OF SUB-BANDGAP ABSORPTION IN A-SI-H BASED MATERIALS
Authors: CHEN IS JIAO LH COLLINS RW WRONSKI CR
Citation: Is. Chen et al., A NOVEL-APPROACH TO THE ANALYSIS OF SUB-BANDGAP ABSORPTION IN A-SI-H BASED MATERIALS, Journal of non-crystalline solids, 200, 1996, pp. 391-394
REAL-TIME SPECTROELLIPSOMETRY CHARACTERIZATION OF OPTICAL GAP PROFILES IN COMPOSITIONALLY-GRADED SEMICONDUCTOR STRUCTURES - APPLICATIONS TOBANDGAP ENGINEERING IN AMORPHOUS SILICON-CARBON ALLOY SOLAR-CELLS
Authors: KIM S BURNHAM JS KOH J JIAO LH WRONSKI CR COLLINS RW
Citation: S. Kim et al., REAL-TIME SPECTROELLIPSOMETRY CHARACTERIZATION OF OPTICAL GAP PROFILES IN COMPOSITIONALLY-GRADED SEMICONDUCTOR STRUCTURES - APPLICATIONS TOBANDGAP ENGINEERING IN AMORPHOUS SILICON-CARBON ALLOY SOLAR-CELLS, Journal of applied physics, 80(4), 1996, pp. 2420-2429
CHARACTERIZATION OF SEMICONDUCTOR HETEROJUNCTIONS USING INTERNAL PHOTOEMISSION
Authors: CHEN IS JACKSON TN WRONSKI CR
Citation: Is. Chen et al., CHARACTERIZATION OF SEMICONDUCTOR HETEROJUNCTIONS USING INTERNAL PHOTOEMISSION, Journal of applied physics, 79(11), 1996, pp. 8470-8474
CORRELATION OF REAL-TIME SPECTROELLIPSOMETRY AND ATOMIC-FORCE MICROSCOPY MEASUREMENTS OF SURFACE-ROUGHNESS ON AMORPHOUS-SEMICONDUCTOR THIN-FILMS
Authors: KOH J LU YW WRONSKI CR KUANG YL COLLINS RW TSONG TT STRAUSSER YE
Citation: J. Koh et al., CORRELATION OF REAL-TIME SPECTROELLIPSOMETRY AND ATOMIC-FORCE MICROSCOPY MEASUREMENTS OF SURFACE-ROUGHNESS ON AMORPHOUS-SEMICONDUCTOR THIN-FILMS, Applied physics letters, 69(9), 1996, pp. 1297-1299
INITIAL, RAPID LIGHT-INDUCED-CHANGES IN HYDROGENATED AMORPHOUS-SILICON MATERIALS AND SOLAR-CELL STRUCTURES - THE EFFECTS OF CHARGED DEFECTS
Authors: JIAO LH LIU HY SEMOUSHIKINA S LEE Y WRONSKI CR
Citation: Lh. Jiao et al., INITIAL, RAPID LIGHT-INDUCED-CHANGES IN HYDROGENATED AMORPHOUS-SILICON MATERIALS AND SOLAR-CELL STRUCTURES - THE EFFECTS OF CHARGED DEFECTS, Applied physics letters, 69(24), 1996, pp. 3713-3715
INTERNAL PHOTOEMISSION ON A-SI-H SCHOTTKY-BARRIER STRUCTURES REVISITED
Authors: CHEN IS WRONSKI CR
Citation: Is. Chen et Cr. Wronski, INTERNAL PHOTOEMISSION ON A-SI-H SCHOTTKY-BARRIER STRUCTURES REVISITED, Journal of non-crystalline solids, 190(1-2), 1995, pp. 58-66
REAL-TIME SPECTROSCOPIC ELLIPSOMETRY STUDY OF HYDROGENATED AMORPHOUS-SILICON P-I-N SOLAR-CELLS - CHARACTERIZATION OF MICROSTRUCTURAL EVOLUTION AND OPTICAL GAPS
Authors: KOH J LU YW KIM S BURNHAM JS WRONSKI CR COLLINS RW
Citation: J. Koh et al., REAL-TIME SPECTROSCOPIC ELLIPSOMETRY STUDY OF HYDROGENATED AMORPHOUS-SILICON P-I-N SOLAR-CELLS - CHARACTERIZATION OF MICROSTRUCTURAL EVOLUTION AND OPTICAL GAPS, Applied physics letters, 67(18), 1995, pp. 2669-2671
CHARGED DEFECT STATES IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON FILMS
Authors: GUNES M WRONSKI CR MCMAHON TJ
Citation: M. Gunes et al., CHARGED DEFECT STATES IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON FILMS, Journal of applied physics, 76(4), 1994, pp. 2260-2263
CHARGE-DEFECT THERMODYNAMIC-EQUILIBRIUM AND METASTABLE DEFECTS IN AMORPHOUS-SILICON
Authors: FORTMANN CM DAWSON RM LIU HY WRONSKI CR
Citation: Cm. Fortmann et al., CHARGE-DEFECT THERMODYNAMIC-EQUILIBRIUM AND METASTABLE DEFECTS IN AMORPHOUS-SILICON, Journal of applied physics, 76(2), 1994, pp. 768-772
PREPARATION OF ULTRATHIN MICROCRYSTALLINE SILICON LAYERS BY ATOMIC-HYDROGEN ETCHING OF AMORPHOUS-SILICON AND END-POINT DETECTION BY REALTIME SPECTROELLIPSOMETRY
Authors: NGUYEN HV AN I COLLINS RW LU YW WAKAGI M WRONSKI CR
Citation: Hv. Nguyen et al., PREPARATION OF ULTRATHIN MICROCRYSTALLINE SILICON LAYERS BY ATOMIC-HYDROGEN ETCHING OF AMORPHOUS-SILICON AND END-POINT DETECTION BY REALTIME SPECTROELLIPSOMETRY, Applied physics letters, 65(26), 1994, pp. 3335-3337
Risultati: 1-25 | 26-30