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Results: 1-10 |
Results: 10
ELECTRICAL-PROPERTIES OF PDGE OHMIC CONTACTS TO GAAS ALXGA1-XAS HETEROSTRUCTURES AT LIQUID-HELIUM TEMPERATURE/
Authors: MOROZOV SV DUBROVSKII YV ABROSIMOVA VN WURFL J
Citation: Sv. Morozov et al., ELECTRICAL-PROPERTIES OF PDGE OHMIC CONTACTS TO GAAS ALXGA1-XAS HETEROSTRUCTURES AT LIQUID-HELIUM TEMPERATURE/, Applied physics letters, 72(22), 1998, pp. 2882-2884
TECHNOLOGY TOWARDS GAAS MESFET-BASED IC FOR HIGH-TEMPERATURE APPLICATIONS
Authors: WURFL J JANKE B
Citation: J. Wurfl et B. Janke, TECHNOLOGY TOWARDS GAAS MESFET-BASED IC FOR HIGH-TEMPERATURE APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 52-56
STRUCTURE AND STABILITY STUDIES ON W, WSI, WSIN GAAS SYSTEMS BY XRD/
Authors: NEBAUER E MERKEL U WURFL J
Citation: E. Nebauer et al., STRUCTURE AND STABILITY STUDIES ON W, WSI, WSIN GAAS SYSTEMS BY XRD/, Semiconductor science and technology, 12(9), 1997, pp. 1072-1078
STABILITY OF SULFUR-PASSIVATED FACETS OF INGAAS-ALGAAS LASER-DIODES
Authors: BEISTER G MAEGE J SEBASTIAN J ERBERT G WEIXELBAUM L WEYERS M WURFL J DAGA OP
Citation: G. Beister et al., STABILITY OF SULFUR-PASSIVATED FACETS OF INGAAS-ALGAAS LASER-DIODES, IEEE photonics technology letters, 8(9), 1996, pp. 1124-1126
HE IMPLANT-DAMAGE ISOLATION OF MOVPE GROWN GAAS INCAP/INCAASP LAYERS/
Authors: STRUSNY H RESSEL P VOGEL K WURFL J
Citation: H. Strusny et al., HE IMPLANT-DAMAGE ISOLATION OF MOVPE GROWN GAAS INCAP/INCAASP LAYERS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 298-300
SIMPLE METHOD FOR EXAMINING SULFUR PASSIVATION OF FACETS IN INGAAS-ALGAAS (LAMBDA=0.98 MU-M) LASER-DIODES
Authors: BEISTER G MAEGE J GUTSCHE D ERBERT G SEBASTIAN J VOGEL K WEYERS M WURFL J DAGA OP
Citation: G. Beister et al., SIMPLE METHOD FOR EXAMINING SULFUR PASSIVATION OF FACETS IN INGAAS-ALGAAS (LAMBDA=0.98 MU-M) LASER-DIODES, Applied physics letters, 68(18), 1996, pp. 2467-2468
OHMIC CONTACTS ON P-IN0.53GA0.47AS PREPARED BY ZN IMPLANTATION IRATE PD-BASED METALLIZATIONS
Authors: RESSEL P STRUSNY H VOGEL K WURFL J FRITZSCHE D KRAUTLE H KUPHAL E MAUSE K TRAPP M RICHTER U
Citation: P. Ressel et al., OHMIC CONTACTS ON P-IN0.53GA0.47AS PREPARED BY ZN IMPLANTATION IRATE PD-BASED METALLIZATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2297-2305
AU-SN SOLDER BUMPS WITH TUNGSTEN SILICIDE BASED BARRIER METALLIZATIONSCHEMES
Authors: PITTROFF W REICHE T BARNIKOW J KLEIN A MERKEL U VOGEL K WURFL J
Citation: W. Pittroff et al., AU-SN SOLDER BUMPS WITH TUNGSTEN SILICIDE BASED BARRIER METALLIZATIONSCHEMES, Applied physics letters, 67(16), 1995, pp. 2367-2369
ANNEALING BEHAVIOR OF AU LAB6/AU/NI/GE SYSTEMS ON N-GAAS STUDIED BY THE SNMS TECHNIQUE/
Authors: NEBAUER E MERKEL U WEISSBRODT P WURFL J
Citation: E. Nebauer et al., ANNEALING BEHAVIOR OF AU LAB6/AU/NI/GE SYSTEMS ON N-GAAS STUDIED BY THE SNMS TECHNIQUE/, Physica status solidi. a, Applied research, 146(2), 1994, pp. 697-702
BURIED SELECTIVELY ETCHABLE MICROSTRUCTURES IN GAAS USING DEEP NITROGEN IMPLANTATION
Authors: MIAO JM WURFL J RUCK D HARTNAGEL HL
Citation: Jm. Miao et al., BURIED SELECTIVELY ETCHABLE MICROSTRUCTURES IN GAAS USING DEEP NITROGEN IMPLANTATION, Radiation effects and defects in solids, 126(1-4), 1993, pp. 365-368
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