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Results:
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Results: 15
Authors:
Sattler, R
Voigt, P
Pradel, H
Wachutka, G
Citation: R. Sattler et al., Innovative design and modelling of a micromechanical relay with electrostatic actuation, J MICROM M, 11(4), 2001, pp. 428-433
Authors:
Scheubert, P
Awakowicz, P
Schwefel, R
Wachutka, G
Citation: P. Scheubert et al., Fluid dynamic modelling and experimental diagnostics of an inductive high density plasma source (ICP), SURF COAT, 142, 2001, pp. 526-530
Authors:
Gerstenmaier, YC
Wachutka, G
Citation: Yc. Gerstenmaier et G. Wachutka, Time dependent temperature fields calculated using eigenfunctions and eigenvalues of the heat conduction equation, MICROELEC J, 32(10-11), 2001, pp. 801-808
Authors:
Schulze, HJ
Frohnmeyer, A
Niedernostheide, FJ
Hille, F
Tutto, P
Pavelka, T
Wachutka, G
Citation: Hj. Schulze et al., Carrier lifetime analysis by photoconductance decay and free carrier absorption measurements, J ELCHEM SO, 148(11), 2001, pp. G655-G661
Authors:
Lades, M
Wachutka, G
Citation: M. Lades et G. Wachutka, Electrothermal analysis of SiC power devices using physically-based devicesimulation, SOL ST ELEC, 44(2), 2000, pp. 359-368
Authors:
Ramminger, S
Seliger, N
Wachutka, G
Citation: S. Ramminger et al., Reliability model for Al wire bonds subjected to heel crack failures, MICROEL REL, 40(8-10), 2000, pp. 1521-1525
Authors:
Soelkner, G
Kreutle, J
Quincke, J
Kaindl, W
Wachutka, G
Citation: G. Soelkner et al., Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices, MICROEL REL, 40(8-10), 2000, pp. 1641-1645
Authors:
Soelkner, G
Voss, P
Kaindl, W
Wachutka, G
Maier, KH
Becker, HW
Citation: G. Soelkner et al., Charge carrier avalanche multiplication in high-voltage diodes triggered by ionizing radiation, IEEE NUCL S, 47(6), 2000, pp. 2365-2372
Authors:
Biro, O
Bohm, P
Preis, K
Wachutka, G
Citation: O. Biro et al., Edge finite element analysis of transient skin effect problems, IEEE MAGNET, 36(4), 2000, pp. 835-839
Authors:
Schulze, HJ
Frohnmeyer, A
Niedernostheide, FJ
Simmnacher, B
Kolbesen, BO
Tutto, P
Pavelka, T
Wachutka, G
Citation: Hj. Schulze et al., Analytical tools for the characterization of power devices, J ELCHEM SO, 147(10), 2000, pp. 3879-3888
Authors:
Konig, ER
Groth, P
Wachutka, G
Citation: Er. Konig et al., New coupled-field device simulation tool for MEMS based on the TP2000 CAD platform, SENS ACTU-A, 76(1-3), 1999, pp. 9-18
Authors:
Schrag, G
Zelder, G
Kapels, H
Wachutka, G
Citation: G. Schrag et al., Numerical and experimental analysis of distributed electromechanical parasitics in the calibration of a fully BiCMOS-integrated capacitive pressure sensor, SENS ACTU-A, 76(1-3), 1999, pp. 19-25
Authors:
Lades, M
Berz, D
Schmid, U
Sheppard, ST
Kaminski, N
Wondrak, W
Wachutka, G
Citation: M. Lades et al., Numerical simulation of implanted top-gate GH-SiC JFET characteristics, MAT SCI E B, 61-2, 1999, pp. 415-418
Authors:
Kaindl, W
Lades, M
Kaminski, N
Niemann, E
Wachutka, G
Citation: W. Kaindl et al., Experimental characterization and numerical simulation of the electrical properties of nitrogen, aluminum, and boron in 4H/6H-SiC, J ELEC MAT, 28(3), 1999, pp. 154-160
Authors:
Lades, M
Kaindl, W
Kaminski, N
Niemann, E
Wachutka, G
Citation: M. Lades et al., Dynamics of incomplete ionized dopants and their impact on 4H/6H-SiC devices, IEEE DEVICE, 46(3), 1999, pp. 598-604
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