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Results:
1-10
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Results: 10
Authors:
Aldao, CM
Weaver, JH
Citation: Cm. Aldao et Jh. Weaver, Halogen etching of Si via atomic-scale processes, PROG SURF S, 68(4-6), 2001, pp. 189-230
Authors:
Nakayama, KS
Sakurai, T
Weaver, JH
Citation: Ks. Nakayama et al., Electrochemical fluorine source for ultrahigh vacuum dosing, J VAC SCI A, 18(5), 2000, pp. 2606-2607
Authors:
Evans, MMR
Han, BY
Weaver, JH
Citation: Mmr. Evans et al., Ag films on GaAs(110): dewetting and void growth, SURF SCI, 465(1-2), 2000, pp. 90-96
Authors:
Han, BY
Nakayama, K
Weaver, JH
Citation: By. Han et al., Electron- and photon-stimulated modification of GaAs(110), Si(100), and Si(111), PHYS REV B, 60(19), 1999, pp. 13846-13853
Authors:
Nakayama, K
Aldao, CM
Weaver, JH
Citation: K. Nakayama et al., Halogen etching of Si(100)-2x1: Dependence on surface concentration, PHYS REV B, 59(24), 1999, pp. 15893-15901
Authors:
Chey, SJ
Huang, L
Weaver, JH
Citation: Sj. Chey et al., Interface bonding and manipulation of Ag and Cu nanocrystals on Si(111)-(7x7)-based surfaces, PHYS REV B, 59(24), 1999, pp. 16033-16041
Authors:
Baumgartel, P
Paggel, JJ
Hasselblatt, M
Horn, K
Fernandez, V
Schaff, O
Weaver, JH
Bradshaw, AM
Woodruff, DP
Rotenberg, E
Denlinger, J
Citation: P. Baumgartel et al., Structure determination of the (root 3 x root 3) R30 degrees boron phase on the Si(111) surface using photoelectron diffraction, PHYS REV B, 59(20), 1999, pp. 13014-13019
Authors:
Nakayama, KS
Weaver, JH
Citation: Ks. Nakayama et Jh. Weaver, Si(100)-(2x1) etching with fluorine: Planar removal versus three dimensional fitting, PHYS REV L, 83(16), 1999, pp. 3210-3213
Authors:
Nakayama, K
Weaver, JH
Citation: K. Nakayama et Jh. Weaver, Electron-stimulated modification of Si surfaces, PHYS REV L, 82(5), 1999, pp. 980-983
Authors:
Chey, SJ
Huang, L
Weaver, JH
Citation: Sj. Chey et al., Self-assembly of multilayer arrays from Ag nanoclusters delivered to Ag(111) by soft landing, SURF SCI, 419(1), 1998, pp. L100-L106
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1-10
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