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Results:
1-17
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Results: 17
Authors:
Birner, A
Wehrspohn, RB
Gosele, UM
Busch, K
Citation: A. Birner et al., Silicon-based photonic crystals, ADVAN MATER, 13(6), 2001, pp. 377-388
Authors:
Schilling, J
Birner, A
Muller, F
Wehrspohn, RB
Hillebrand, R
Gosele, U
Busch, K
John, S
Leonard, SW
van Driel, HM
Citation: J. Schilling et al., Optical characterisation of 2D macroporous silicon photonic crystals with bandgaps around 3.5 and 1.3 mu m, OPT MATER, 17(1-2), 2001, pp. 7-10
Authors:
Wehrspohn, RB
Schilling, J
Citation: Rb. Wehrspohn et J. Schilling, Electrochemically prepared pore arrays for photonic-crystal applications, MRS BULL, 26(8), 2001, pp. 623-626
Authors:
Wehrspohn, RB
Deane, SC
French, ID
Powell, MJ
Citation: Rb. Wehrspohn et al., Stability of plasma deposited thin film transistors - comparison of amorphous and microcrystalline silicon, THIN SOL FI, 383(1-2), 2001, pp. 117-121
Authors:
Nielsch, K
Wehrspohn, RB
Barthel, J
Kirschner, J
Gosele, U
Fischer, SF
Kronmuller, H
Citation: K. Nielsch et al., Hexagonally ordered 100 nm period nickel nanowire arrays, APPL PHYS L, 79(9), 2001, pp. 1360-1362
Authors:
Schilling, J
Muller, F
Matthias, S
Wehrspohn, RB
Gosele, U
Busch, K
Citation: J. Schilling et al., Three-dimensional photonic crystals based on macroporous silicon with modulated pore diameter, APPL PHYS L, 78(9), 2001, pp. 1180-1182
Authors:
Chazalviel, JN
Wehrspohn, RB
Ozanam, F
Citation: Jn. Chazalviel et al., Electrochemical preparation of porous semiconductors: from phenomenology to understanding, MAT SCI E B, 69, 2000, pp. 1-10
Authors:
Wehrspohn, RB
Deane, SC
French, ID
Powell, MJ
Citation: Rb. Wehrspohn et al., Effect of amorphous silicon material properties on the stability of thin film transistors: evidence for a local defect creation model, J NON-CRYST, 266, 2000, pp. 459-463
Authors:
Wehrspohn, RB
Deane, SC
French, ID
Gale, I
Hewett, J
Powell, MJ
Robertson, J
Citation: Rb. Wehrspohn et al., Relative importance of the Si-Si bond and Si-H bond for the stability of amorphous silicon thin film transistors, J APPL PHYS, 87(1), 2000, pp. 144-154
Authors:
Wehrspohn, RB
Powell, MJ
Deane, SC
French, ID
Cabarrocas, PRI
Citation: Rb. Wehrspohn et al., Dangling-bond defect state creation in microcrystalline silicon thin-film transistors, APPL PHYS L, 77(5), 2000, pp. 750-752
Authors:
Wehrspohn, RB
Chazalviel, JN
Ozanam, F
Solomon, I
Citation: Rb. Wehrspohn et al., Spatial versus quantum confinement in porous amorphous silicon nanostructures, EUR PHY J B, 8(2), 1999, pp. 179-193
Authors:
Zhu, M
Han, Y
Godet, C
Wehrspohn, RB
Citation: M. Zhu et al., Photoluminescence from hydrogenated amorphous silicon oxide thin films, J NON-CRYST, 254, 1999, pp. 74-79
Authors:
Wehrspohn, RB
Ozanam, F
Chazalviel, JN
Citation: Rb. Wehrspohn et al., Nano- and macropore formation in p-type silicon, J ELCHEM SO, 146(9), 1999, pp. 3309-3314
Authors:
Wehrspohn, RB
Deane, SC
French, ID
Gale, IG
Powell, MJ
Bruggemann, R
Citation: Rb. Wehrspohn et al., Urbach energy dependence of the stability in amorphous silicon thin-film transistors, APPL PHYS L, 74(22), 1999, pp. 3374-3376
Authors:
Deane, SC
Wehrspohn, RB
Powell, MJ
Citation: Sc. Deane et al., Unification of the time and temperature dependence of dangling-bond-defectcreation and removal in amorphous-silicon thin-film transistors, PHYS REV B, 58(19), 1998, pp. 12625-12628
Authors:
Fellah, S
Wehrspohn, RB
Gabouze, N
Ozanam, F
Chazalviel, JN
Citation: S. Fellah et al., Photoluminescence quenching of porous silicon in organic solvents: evidence for dielectric effects, J LUMINESC, 80(1-4), 1998, pp. 109-113
Authors:
Wehrspohn, RB
Zhu, M
Godet, C
Citation: Rb. Wehrspohn et al., Visible photoluminescence and its mechanisms from a-SiOx : H films with different stoichiometry, J LUMINESC, 80(1-4), 1998, pp. 449-453
Risultati:
1-17
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