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Results:
1-13
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Results: 13
Authors:
Schneider, H
Koidl, P
Walther, M
Fleissner, J
Rehm, R
Diwo, E
Schwarz, K
Weimann, G
Citation: H. Schneider et al., Ten years of QWIP development at Fraunhofer IAF, INFR PHYS T, 42(3-5), 2001, pp. 283-289
Authors:
Weimann, G
Lubenow, N
Selleng, K
Eichler, P
Albrecht, D
Greinacher, A
Citation: G. Weimann et al., Glucosamine sulfate does not crossreact with the antibodies of patients with heparin-induced thrombocytopenia, EUR J HAEMA, 66(3), 2001, pp. 195-199
Authors:
Simanowski, S
Mermelstein, C
Walther, M
Herres, N
Kiefer, R
Rattunde, M
Schmitz, J
Wagner, J
Weimann, G
Citation: S. Simanowski et al., Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation, J CRYST GR, 227, 2001, pp. 595-599
Authors:
Chertouk, M
Dammann, M
Kohler, K
Weimann, G
Citation: M. Chertouk et al., 0.15 mu m passivated InP-based HEMT's MMIC technology with high thermal stability in hydrogen ambient, IEEE ELEC D, 21(3), 2000, pp. 97-99
Authors:
Dammann, M
Chertouk, M
Jantz, W
Kohler, K
Weimann, G
Citation: M. Dammann et al., Reliability of InAlAs/InGaAs HEMTs grown on GaAs substrate with metamorphic buffer, MICROEL REL, 40(8-10), 2000, pp. 1709-1713
Authors:
Dammann, M
Chertouk, M
Jantz, W
Kohler, K
Marsetz, W
Schmidt, KH
Weimann, G
Citation: M. Dammann et al., Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs, MICROEL REL, 40(2), 2000, pp. 287-291
Authors:
Simanowski, S
Herres, N
Mermelstein, C
Kiefer, R
Schmitz, J
Walther, M
Wagner, J
Weimann, G
Citation: S. Simanowski et al., Strain adjustment in (GaIn)(AsSb)/(A1Ga)(AsSb) QWs for 2.3-2.7 mu m laser structures, J CRYST GR, 209(1), 2000, pp. 15-20
Authors:
Mikulla, M
Schmitt, A
Walther, M
Kiefer, R
Pletschen, W
Braunstein, J
Weimann, G
Citation: M. Mikulla et al., 25-W CW high-brightness tapered semiconductor laser-array, IEEE PHOTON, 11(4), 1999, pp. 412-414
Authors:
Daleiden, J
Kiefer, R
Klussmann, S
Kunzer, M
Manz, C
Wailher, M
Braunstein, J
Weimann, G
Citation: J. Daleiden et al., Chemically-assisted ion-beam etching of (AlGa)As/GaAs: lattice damage and removal by in-situ Cl-2 treatment, MICROEL ENG, 45(1), 1999, pp. 9-14
Authors:
Shen, JX
Oka, Y
Hu, CY
Ossau, W
Landwehr, G
Friedland, KJ
Hey, R
Ploog, K
Weimann, G
Citation: Jx. Shen et al., Photoluminescence in modulation-doped GaAs/Ga(1-x)A1(x)As heterojunctions, PHYS REV B, 59(12), 1999, pp. 8093-8104
Authors:
Simanowski, S
Walther, M
Schmitz, J
Kiefer, R
Herres, N
Fuchs, F
Maier, M
Mermelstein, C
Wagner, J
Weimann, G
Citation: S. Simanowski et al., Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb)layers for 2.0-2.5 mu m laser structures on GaSb substrates, J CRYST GR, 202, 1999, pp. 849-853
Authors:
Finkeissen, E
Potemski, M
Wyder, P
Vina, L
Weimann, G
Citation: E. Finkeissen et al., Cooling of a semiconductor by luminescence up-conversion, APPL PHYS L, 75(9), 1999, pp. 1258-1260
Authors:
Schneider, H
Schonbein, C
Walther, M
Koidl, P
Weimann, G
Citation: H. Schneider et al., Influence of optical interference on quantum well infrared photodetectors in a 45 degrees waveguide geometry, APPL PHYS L, 74(1), 1999, pp. 16-18
Risultati:
1-13
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