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Results: 1-18 |
Results: 18
A pulsed synthesis of beta-FeSi2 layers on silicon implanted with Fe+ ions
Authors: Batalov, RI Bayazitov, RM Terukov, EI Kudoyarova, VK Weiser, G Kuehne, H
Citation: Ri. Batalov et al., A pulsed synthesis of beta-FeSi2 layers on silicon implanted with Fe+ ions, SEMICONDUCT, 35(11), 2001, pp. 1263-1269
Photoluminescence of ytterbium doped amorphous silicon and silicon carbide
Authors: Terukov, EI Kudoyarova, VK Kuznetsov, AN Koughia, KV Weiser, G Kuehne, H
Citation: Ei. Terukov et al., Photoluminescence of ytterbium doped amorphous silicon and silicon carbide, MAT SCI E B, 81(1-3), 2001, pp. 161-163
Comparison of the optical spectra of single crystal and crystalline films of alpha-sexithiophene
Authors: Moller, S Weiser, G
Citation: S. Moller et G. Weiser, Comparison of the optical spectra of single crystal and crystalline films of alpha-sexithiophene, SYNTH METAL, 122(1), 2001, pp. 41-43
Excitonic photoconductivity of 4BCMU polydiacetylene single crystals
Authors: Moller, S Weiser, G Lapersonne-Meyer, C
Citation: S. Moller et al., Excitonic photoconductivity of 4BCMU polydiacetylene single crystals, SYNTH METAL, 116(1-3), 2001, pp. 23-26
Field enhanced photoluminescence of isolated chains of 3BCMU in their monomer single crystals
Authors: Moller, S Weiser, G Lecuiller, R Lapersonne-Meyer, C
Citation: S. Moller et al., Field enhanced photoluminescence of isolated chains of 3BCMU in their monomer single crystals, SYNTH METAL, 116(1-3), 2001, pp. 153-156
Absorption and electroabsorption spectra of an alpha-sexithiophene single crystal at 20 K
Authors: Moller, S Weiser, G Garnier, F
Citation: S. Moller et al., Absorption and electroabsorption spectra of an alpha-sexithiophene single crystal at 20 K, SYNTH METAL, 116(1-3), 2001, pp. 305-309
The influence of deposition parameters on the structure of nanocrystallinesilicon
Authors: Terukov, EI Kudoyarova, VK Davydov, VY Koughia, KV Weiser, G Mell, H
Citation: Ei. Terukov et al., The influence of deposition parameters on the structure of nanocrystallinesilicon, MAT SCI E B, 69, 2000, pp. 266-271
On the carrier mean free path in GaxIn1-xAs mixed crystals
Authors: Baranovskii, SD Cordes, H Yamasaki, S Weiser, G
Citation: Sd. Baranovskii et al., On the carrier mean free path in GaxIn1-xAs mixed crystals, PHYS ST S-B, 218(2), 2000, pp. R7-R8
Electric field effects on the Davydov components of a strong intramolecular transition: alpha-sexithiophene single crystals
Authors: Moller, S Weiser, G Garnier, F
Citation: S. Moller et al., Electric field effects on the Davydov components of a strong intramolecular transition: alpha-sexithiophene single crystals, PHYS REV B, 61(23), 2000, pp. 15749-15755
Normal-mode linewidths in a semiconductor microcavity with various cavity qualities
Authors: Hofmann, M Karaiskaj, D Ellmers, C Maxisch, T Jahnke, F Kolbe, HJ Weiser, G Rettig, R Leu, S Stolz, W Koch, SW Ruhle, WW
Citation: M. Hofmann et al., Normal-mode linewidths in a semiconductor microcavity with various cavity qualities, PHYS ST S-A, 178(1), 2000, pp. 179-181
Erbium incorporation in plasma-deposited amorphous silicon
Authors: Terukov, EI Konkov, OI Kudoyarova, VK Koughia, KV Weiser, G Kuhne, H Kleider, JP Longeaud, C Bruggemann, R
Citation: Ei. Terukov et al., Erbium incorporation in plasma-deposited amorphous silicon, J NON-CRYST, 266, 2000, pp. 614-618
Influence of the substrate temperature and annealing on the 1.54-mu m erbium photoluminescence of a-Si : H films obtained using a glow discharge
Authors: Terukov, EI Kon'kov, OI Kudoyarova, VK Gusev, OB Weiser, G Kuehne, H
Citation: Ei. Terukov et al., Influence of the substrate temperature and annealing on the 1.54-mu m erbium photoluminescence of a-Si : H films obtained using a glow discharge, SEMICONDUCT, 33(2), 1999, pp. 177-179
Photoconductivity of polydiacetylene chains in polymer and monomer single crystals
Authors: Moller, S Weiser, G
Citation: S. Moller et G. Weiser, Photoconductivity of polydiacetylene chains in polymer and monomer single crystals, CHEM PHYS, 246(1-3), 1999, pp. 483-494
Electro-optical studies of a soluble conjugated polymer with particularly low intrachain disorder
Authors: Harrison, MG Moller, S Weiser, G Urbasch, G Mahrt, RF Bassler, H Scherf, U
Citation: Mg. Harrison et al., Electro-optical studies of a soluble conjugated polymer with particularly low intrachain disorder, PHYS REV B, 60(12), 1999, pp. 8650-8658
Confinement effects in bulk samples derived from the Franz-Keldysh effect
Authors: Kolbe, HJ Agert, C Stolz, W Weiser, G
Citation: Hj. Kolbe et al., Confinement effects in bulk samples derived from the Franz-Keldysh effect, PHYS REV B, 59(23), 1999, pp. 14896-14898
Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling
Authors: Karaiskaj, D Maxisch, T Ellmers, C Kolbe, HJ Weiser, G Rettig, R Leu, S Stolz, W Hofmann, M Jahnke, F Koch, SW Ruhle, WW
Citation: D. Karaiskaj et al., Linewidths in a semiconductor microcavity with variable strength of normal-mode coupling, PHYS REV B, 59(21), 1999, pp. 13525-13527
Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon
Authors: Kuhne, H Weiser, G Terukov, EI Kusnetsov, AN Kudoyarova, VK
Citation: H. Kuhne et al., Resonant nonradiative energy transfer to erbium ions in amorphous hydrogenated silicon, J APPL PHYS, 86(2), 1999, pp. 896-901
Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films
Authors: Kudoyarova, VK Kuznetsov, AN Terukov, EI Gusev, OB Kudryavtsev, YA Ber, BY Gusinskii, GM Fuhs, W Weiser, G Kuehne, H
Citation: Vk. Kudoyarova et al., Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 mu m) in erbium-doped a-Si : H films, SEMICONDUCT, 32(11), 1998, pp. 1234-1238
Risultati: 1-18 |