AAAAAA

   
Results: 1-12 |
Results: 12
Deeply etched semiconductor/benzocyclobutene distributed Bragg reflector laser combined with multiple cavities for 1.5-mu m-wavelength single-mode operation
Authors: Wiedmann, J Raj, MM Ebihara, K Matsui, K Tamura, S Arai, S
Citation: J. Wiedmann et al., Deeply etched semiconductor/benzocyclobutene distributed Bragg reflector laser combined with multiple cavities for 1.5-mu m-wavelength single-mode operation, JPN J A P 1, 40(6A), 2001, pp. 4031-4037
High-reflectivity semiconductor/benzocyclobutene Bragg reflector mirrors for GaInAsP/InP lasers
Authors: Raj, MM Wiedmann, J Toyoshima, S Saka, Y Ebihara, K Arai, S
Citation: Mm. Raj et al., High-reflectivity semiconductor/benzocyclobutene Bragg reflector mirrors for GaInAsP/InP lasers, JPN J A P 1, 40(4A), 2001, pp. 2269-2277
1.5-mu m-wavelength distributed feedback lasers with deeply etched first-order vertical grating
Authors: Kim, HC Wiedmann, J Matsui, K Tamura, S Arai, S
Citation: Hc. Kim et al., 1.5-mu m-wavelength distributed feedback lasers with deeply etched first-order vertical grating, JPN J A P 2, 40(10B), 2001, pp. L1107-L1109
Late Albian ammonite biostratigraphy of the Kirchrode I borehole, Hannover, Germany
Authors: Wiedmann, J Owen, HG
Citation: J. Wiedmann et Hg. Owen, Late Albian ammonite biostratigraphy of the Kirchrode I borehole, Hannover, Germany, PALAEOGEO P, 174(1-3), 2001, pp. 161-180
Polarisation insensitive deep-ridge vertical-groove DFB waveguide for all-optical switching
Authors: Jeong, SH Kim, HC Mizumoto, T Wiedmann, J Arai, S Takenaka, M Nakano, Y
Citation: Sh. Jeong et al., Polarisation insensitive deep-ridge vertical-groove DFB waveguide for all-optical switching, ELECTR LETT, 37(23), 2001, pp. 1387-1389
1.5 mu m wavelength distributed reflector lasers with vertical grating
Authors: Wiedmann, J Ebihara, K Kim, HC Chen, B Ohta, M Matsui, K Tamura, S Shim, JI Arai, S
Citation: J. Wiedmann et al., 1.5 mu m wavelength distributed reflector lasers with vertical grating, ELECTR LETT, 37(13), 2001, pp. 831-832
Theoretical analysis of GaInAsP/InP multiple micro-cavity laser
Authors: Raj, MM Serizawa, N Wiedmann, J Arai, S
Citation: Mm. Raj et al., Theoretical analysis of GaInAsP/InP multiple micro-cavity laser, JPN J A P 1, 39(10), 2000, pp. 5847-5854
Highly uniform 1.5 mu m wavelength deeply etched semiconductor/benzocyclobutene distributed Bragg reflector lasers
Authors: Raj, MM Wiedmann, J Saka, Y Ebihara, K Arai, S
Citation: Mm. Raj et al., Highly uniform 1.5 mu m wavelength deeply etched semiconductor/benzocyclobutene distributed Bragg reflector lasers, JPN J A P 2, 39(12B), 2000, pp. L1297-L1299
Singlemode operation of deeply etched coupled cavity laser with DBR facet
Authors: Wiedmann, J Raj, MM Saka, Y Tamura, S Arai, S
Citation: J. Wiedmann et al., Singlemode operation of deeply etched coupled cavity laser with DBR facet, ELECTR LETT, 36(14), 2000, pp. 1211-1212
Continuous wave operation of 1.55 mu m GaInAsP/InP laser with semiconductor/benzocyclobutene distributed Bragg reflector
Authors: Raj, MM Saka, Y Wiedmann, J Yasumoto, H Arai, S
Citation: Mm. Raj et al., Continuous wave operation of 1.55 mu m GaInAsP/InP laser with semiconductor/benzocyclobutene distributed Bragg reflector, JPN J A P 2, 38(11A), 1999, pp. L1240-L1242
Fabrication approach for antiphase narrow linewidth complex coupled 1.55 mu m DFB lasers
Authors: Schreiner, R Wiedmann, J Coenning, W Porsche, J Gentner, JL Berroth, M Scholz, F Schweizer, H
Citation: R. Schreiner et al., Fabrication approach for antiphase narrow linewidth complex coupled 1.55 mu m DFB lasers, ELECTR LETT, 35(2), 1999, pp. 146-148
1.5 mu m wavelength DBR lasers consisting of 3 lambda/4-semiconductor and 3 lambda/4-groove buried with benzocyclobutene
Authors: Raj, MM Wiedmann, J Saka, Y Yasumoto, H Arai, S
Citation: Mm. Raj et al., 1.5 mu m wavelength DBR lasers consisting of 3 lambda/4-semiconductor and 3 lambda/4-groove buried with benzocyclobutene, ELECTR LETT, 35(16), 1999, pp. 1335-1337
Risultati: 1-12 |