Authors:
Wiedmann, J
Raj, MM
Ebihara, K
Matsui, K
Tamura, S
Arai, S
Citation: J. Wiedmann et al., Deeply etched semiconductor/benzocyclobutene distributed Bragg reflector laser combined with multiple cavities for 1.5-mu m-wavelength single-mode operation, JPN J A P 1, 40(6A), 2001, pp. 4031-4037
Authors:
Raj, MM
Wiedmann, J
Toyoshima, S
Saka, Y
Ebihara, K
Arai, S
Citation: Mm. Raj et al., High-reflectivity semiconductor/benzocyclobutene Bragg reflector mirrors for GaInAsP/InP lasers, JPN J A P 1, 40(4A), 2001, pp. 2269-2277
Authors:
Kim, HC
Wiedmann, J
Matsui, K
Tamura, S
Arai, S
Citation: Hc. Kim et al., 1.5-mu m-wavelength distributed feedback lasers with deeply etched first-order vertical grating, JPN J A P 2, 40(10B), 2001, pp. L1107-L1109
Citation: J. Wiedmann et Hg. Owen, Late Albian ammonite biostratigraphy of the Kirchrode I borehole, Hannover, Germany, PALAEOGEO P, 174(1-3), 2001, pp. 161-180
Authors:
Jeong, SH
Kim, HC
Mizumoto, T
Wiedmann, J
Arai, S
Takenaka, M
Nakano, Y
Citation: Sh. Jeong et al., Polarisation insensitive deep-ridge vertical-groove DFB waveguide for all-optical switching, ELECTR LETT, 37(23), 2001, pp. 1387-1389
Authors:
Raj, MM
Wiedmann, J
Saka, Y
Ebihara, K
Arai, S
Citation: Mm. Raj et al., Highly uniform 1.5 mu m wavelength deeply etched semiconductor/benzocyclobutene distributed Bragg reflector lasers, JPN J A P 2, 39(12B), 2000, pp. L1297-L1299
Authors:
Raj, MM
Saka, Y
Wiedmann, J
Yasumoto, H
Arai, S
Citation: Mm. Raj et al., Continuous wave operation of 1.55 mu m GaInAsP/InP laser with semiconductor/benzocyclobutene distributed Bragg reflector, JPN J A P 2, 38(11A), 1999, pp. L1240-L1242
Authors:
Schreiner, R
Wiedmann, J
Coenning, W
Porsche, J
Gentner, JL
Berroth, M
Scholz, F
Schweizer, H
Citation: R. Schreiner et al., Fabrication approach for antiphase narrow linewidth complex coupled 1.55 mu m DFB lasers, ELECTR LETT, 35(2), 1999, pp. 146-148
Authors:
Raj, MM
Wiedmann, J
Saka, Y
Yasumoto, H
Arai, S
Citation: Mm. Raj et al., 1.5 mu m wavelength DBR lasers consisting of 3 lambda/4-semiconductor and 3 lambda/4-groove buried with benzocyclobutene, ELECTR LETT, 35(16), 1999, pp. 1335-1337