Authors:
Wilamowski, Z
Sandersfeld, N
Jantsch, W
Tobben, D
Schaffler, F
Citation: Z. Wilamowski et al., Screening breakdown on the route toward the metal-insulator transition in modulation doped Si/SiGe quantum wells - art. no. 026401, PHYS REV L, 8702(2), 2001, pp. 6401-NIL_68
Authors:
Jantsch, W
Wilamowski, Z
Sandersfeld, N
Schaffler, F
Citation: W. Jantsch et al., Determination of potential fluctuations in modulation-doped SiGe-quantum wells from conduction electron spin resonance, PHYSICA B, 274, 1999, pp. 944-946
Authors:
Mycielski, A
Szadkowski, A
Lusakowska, E
Kowalczyk, L
Domagala, J
Bak-Misiuk, J
Wilamowski, Z
Citation: A. Mycielski et al., Parameters of substrates-single crystals of ZnTe and Cd1-xZnxTe (x < 0.25), obtained by physical vapor transport technique (PVT), J CRYST GR, 197(3), 1999, pp. 423-426
Authors:
Skierbiszewski, C
Wilamowski, Z
Jantsch, W
Citation: C. Skierbiszewski et al., The universal behaviour of shallow-deep level instabilities in semiconductors, PHYS ST S-B, 210(2), 1998, pp. 765-769