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Results: 1-12 |
Results: 12
Spin resonance properties of the two-dimensional electron gas
Authors: Wilamowski, Z Jantsch, W
Citation: Z. Wilamowski et W. Jantsch, Spin resonance properties of the two-dimensional electron gas, PHYSICA E, 10(1-3), 2001, pp. 17-21
Screening breakdown on the route toward the metal-insulator transition in modulation doped Si/SiGe quantum wells - art. no. 026401
Authors: Wilamowski, Z Sandersfeld, N Jantsch, W Tobben, D Schaffler, F
Citation: Z. Wilamowski et al., Screening breakdown on the route toward the metal-insulator transition in modulation doped Si/SiGe quantum wells - art. no. 026401, PHYS REV L, 8702(2), 2001, pp. 6401-NIL_68
Spin properties of the two-dimensional electron gas
Authors: Wilamowski, Z Jantsch, W Sandersfeld, N Schaffler, F
Citation: Z. Wilamowski et al., Spin properties of the two-dimensional electron gas, PHYSICA B, 284, 2000, pp. 1926-1927
New type of antiferromagnetic polaron and bipolaron in high-T-c superconductors
Authors: Hankiewicz, EM Buczko, R Wilamowski, Z
Citation: Em. Hankiewicz et al., New type of antiferromagnetic polaron and bipolaron in high-T-c superconductors, PHYSICA B, 284, 2000, pp. 437-438
Destruction of antiferromagnetic order by localized polarons
Authors: Wilamowski, Z Hankiewicz, EM
Citation: Z. Wilamowski et Em. Hankiewicz, Destruction of antiferromagnetic order by localized polarons, ACT PHY P A, 97(3), 2000, pp. 403-406
"Comb-like" polarons and bipolarons in high-T-c materials
Authors: Hankiewicz, EM Buczko, R Wilamowski, Z
Citation: Em. Hankiewicz et al., "Comb-like" polarons and bipolarons in high-T-c materials, ACT PHY P A, 97(1), 2000, pp. 185-188
ESR investigations of modulation-doped Si/SiGe quantum wells
Authors: Sandersfeld, N Jantsch, W Wilamowski, Z Schaffler, F
Citation: N. Sandersfeld et al., ESR investigations of modulation-doped Si/SiGe quantum wells, THIN SOL FI, 369(1-2), 2000, pp. 312-315
Determination of potential fluctuations in modulation-doped SiGe-quantum wells from conduction electron spin resonance
Authors: Jantsch, W Wilamowski, Z Sandersfeld, N Schaffler, F
Citation: W. Jantsch et al., Determination of potential fluctuations in modulation-doped SiGe-quantum wells from conduction electron spin resonance, PHYSICA B, 274, 1999, pp. 944-946
Impact ionization of DX--centers in GaAs : Si by hot electrons
Authors: Asche, R Sarbey, OG Wilamowski, Z
Citation: R. Asche et al., Impact ionization of DX--centers in GaAs : Si by hot electrons, PHYSICA B, 272(1-4), 1999, pp. 241-243
Parameters of substrates-single crystals of ZnTe and Cd1-xZnxTe (x < 0.25), obtained by physical vapor transport technique (PVT)
Authors: Mycielski, A Szadkowski, A Lusakowska, E Kowalczyk, L Domagala, J Bak-Misiuk, J Wilamowski, Z
Citation: A. Mycielski et al., Parameters of substrates-single crystals of ZnTe and Cd1-xZnxTe (x < 0.25), obtained by physical vapor transport technique (PVT), J CRYST GR, 197(3), 1999, pp. 423-426
ESR investigations of modulation-doped Si/SiGe quantum wells
Authors: Jantsch, W Wilamowski, Z Sandersfeld, N Schaffler, F
Citation: W. Jantsch et al., ESR investigations of modulation-doped Si/SiGe quantum wells, PHYS ST S-B, 210(2), 1998, pp. 643-648
The universal behaviour of shallow-deep level instabilities in semiconductors
Authors: Skierbiszewski, C Wilamowski, Z Jantsch, W
Citation: C. Skierbiszewski et al., The universal behaviour of shallow-deep level instabilities in semiconductors, PHYS ST S-B, 210(2), 1998, pp. 765-769
Risultati: 1-12 |