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Results: 1-25/69
Authors:
Burgess, SC
Kahangamage, UP
Barr, G
Williams, JS
Citation: Sc. Burgess et al., Shape factors for beams with misaligned loads, P I MEC E C, 215(C8), 2001, pp. 981-993
Authors:
Mildenhall, PT
Williams, JS
Citation: Pt. Mildenhall et Js. Williams, Instability in students' use of intuitive and Newtonian models to predict motion: the critical effect of the parameters involved, INT J SCI E, 23(6), 2001, pp. 643-660
Authors:
Kucheyev, SO
Williams, JS
Pearton, SJ
Citation: So. Kucheyev et al., Ion implantation into GaN, MAT SCI E R, 33(2-3), 2001, pp. 51-107
Authors:
Bradby, JE
Williams, JS
Wong-Leung, J
Swain, MV
Munroe, P
Citation: Je. Bradby et al., Mechanical deformation in silicon by micro-indentation, J MATER RES, 16(5), 2001, pp. 1500-1507
Authors:
Williams, JS
Ridgway, MC
Conway, MJ
Wong-Leung, J
Zhu, XF
Petravic, M
Fortuna, F
Ruault, MO
Bernas, H
Kinomura, A
Nakano, Y
Hayashi, Y
Citation: Js. Williams et al., Interaction of defects and metals with nanocavities in silicon, NUCL INST B, 178, 2001, pp. 33-43
Authors:
Gurarie, VN
Otsuka, PH
Williams, JS
Conway, MJ
Citation: Vn. Gurarie et al., Ion beam modification of thermal stress resistance of MgO single crystals with different crystallographic faces, NUCL INST B, 178, 2001, pp. 138-143
Authors:
Kucheyev, SO
Williams, JS
Zou, J
Jagadish, C
Li, G
Citation: So. Kucheyev et al., The effects of ion mass, energy, dose, flux and irradiation temperature onimplantation disorder in GaN, NUCL INST B, 178, 2001, pp. 209-213
Authors:
Stritzker, B
Petravic, M
Wong-Leung, J
Williams, JS
Citation: B. Stritzker et al., Efficiency of dislocations and cavities for gettering of Cu and Fe in silicon, NUCL INST B, 175, 2001, pp. 154-158
Authors:
Kucheyev, SO
Williams, JS
Zou, J
Jagadish, C
Li, G
Citation: So. Kucheyev et al., High-dose ion implantation into GaN, NUCL INST B, 175, 2001, pp. 214-218
Authors:
Brown, RA
Williams, JS
Citation: Ra. Brown et Js. Williams, Crystalline-to-amorphous phase transformation in ion-irradiated GaAs - art. no. 155202, PHYS REV B, 6415(15), 2001, pp. 5202
Authors:
Kucheyev, SO
Williams, JS
Jagadish, C
Zou, J
Li, G
Titov, AI
Citation: So. Kucheyev et al., Effect of ion species on the accumulation of ion-beam damage in GaN - art.no. 035202, PHYS REV B, 6403(3), 2001, pp. 5202
Authors:
Kucheyev, SO
Williams, JS
Zou, J
Bradby, JE
Jagadish, C
Li, G
Citation: So. Kucheyev et al., Ion-beam-induced reconstruction of amorphous GaN - art. no. 113202, PHYS REV B, 6311(11), 2001, pp. 3202
Authors:
Enk, TA
Picton, HD
Williams, JS
Citation: Ta. Enk et al., Factors limiting a bighorn sheep population in Montana following a dieoff, NW SCI, 75(3), 2001, pp. 280-291
Authors:
Kucheyev, SO
Williams, JS
Zou, J
Pearton, SJ
Nakagawa, Y
Citation: So. Kucheyev et al., Implantation-produced structural damage in InxGa1-xN, APPL PHYS L, 79(5), 2001, pp. 602-604
Authors:
Zhu, XF
Williams, JS
Conway, MJ
Ridgway, MC
Fortuna, F
Ruault, MO
Bernas, H
Citation: Xf. Zhu et al., Direct observation of irradiation-induced nanocavity shrinkage in Si, APPL PHYS L, 79(21), 2001, pp. 3416-3418
Authors:
Kucheyev, SO
Toth, M
Phillips, MR
Williams, JS
Jagadish, C
Citation: So. Kucheyev et al., Effects of excitation density on cathodoluminescence from GaN, APPL PHYS L, 79(14), 2001, pp. 2154-2156
Authors:
Boudinov, H
Kucheyev, SO
Williams, JS
Jagadish, C
Li, G
Citation: H. Boudinov et al., Electrical isolation of GaN by MeV ion irradiation, APPL PHYS L, 78(7), 2001, pp. 943-945
Authors:
Bradby, JE
Williams, JS
Wong-Leung, J
Swain, MV
Munroe, P
Citation: Je. Bradby et al., Mechanical deformation of InP and GaAs by spherical indentation, APPL PHYS L, 78(21), 2001, pp. 3235-3237
Authors:
Kucheyev, SO
Bradby, JE
Williams, JS
Jagadish, C
Swain, MV
Li, G
Citation: So. Kucheyev et al., Deformation behavior of ion-beam-modified GaN, APPL PHYS L, 78(2), 2001, pp. 156-158
Authors:
Williams, JS
Conway, MJ
Williams, BC
Wong-Leung, J
Citation: Js. Williams et al., Direct observation of voids in the vacancy excess region of ion bombarded silicon, APPL PHYS L, 78(19), 2001, pp. 2867-2869
Authors:
Stritzker, B
Petravic, M
Wong-Leung, J
Williams, JS
Citation: B. Stritzker et al., Selectivity of nanocavities and dislocations for gettering of Cu and Fe insilicon, APPL PHYS L, 78(18), 2001, pp. 2682-2684
Authors:
Kucheyev, SO
Williams, JS
Titov, AI
Li, G
Jagadish, C
Citation: So. Kucheyev et al., Effect of the density of collision cascades on implantation damage in GaN, APPL PHYS L, 78(18), 2001, pp. 2694-2696
Authors:
Kucheyev, SO
Williams, JS
Zou, J
Jagadish, C
Li, G
Citation: So. Kucheyev et al., Disordering and anomalous surface erosion of GaN during ion bombardment atelevated temperatures, APPL PHYS L, 78(10), 2001, pp. 1373-1375
Authors:
Kucheyev, SO
Toth, M
Phillips, MR
Williams, JS
Jagadish, C
Li, G
Citation: So. Kucheyev et al., Cathodoluminescence depth profiling of ion-implanted GaN, APPL PHYS L, 78(1), 2001, pp. 34-36
Authors:
Williams, JS
Janssen, PL
Fuller, DD
Fregosi, RF
Citation: Js. Williams et al., Influence of posture and breathing route on neural drive to upper airway dilator muscles during exercise, J APP PHYSL, 89(2), 2000, pp. 590-598